KR930020586A - Wiring structure and ohmic electrode of semiconductor device and method of forming them - Google Patents
Wiring structure and ohmic electrode of semiconductor device and method of forming them Download PDFInfo
- Publication number
- KR930020586A KR930020586A KR1019930003079A KR930003079A KR930020586A KR 930020586 A KR930020586 A KR 930020586A KR 1019930003079 A KR1019930003079 A KR 1019930003079A KR 930003079 A KR930003079 A KR 930003079A KR 930020586 A KR930020586 A KR 930020586A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- tungsten
- gold
- auge
- nickel
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract 4
- 229910045601 alloy Inorganic materials 0.000 claims description 15
- 239000000956 alloy Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims 60
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 31
- 239000010931 gold Substances 0.000 claims 18
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 11
- 229910052721 tungsten Inorganic materials 0.000 claims 11
- 239000010937 tungsten Substances 0.000 claims 11
- 229910052751 metal Inorganic materials 0.000 claims 10
- 239000002184 metal Substances 0.000 claims 10
- 229910052759 nickel Inorganic materials 0.000 claims 10
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical compound [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 claims 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 9
- 229910052737 gold Inorganic materials 0.000 claims 9
- 238000005275 alloying Methods 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 3
- 239000011229 interlayer Substances 0.000 claims 3
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 claims 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims 3
- 229910052732 germanium Inorganic materials 0.000 claims 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 2
- 238000001459 lithography Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910000990 Ni alloy Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000006731 degradation reaction Methods 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
본 발명은, 생산성이 높고, 옴전극의 저저항화가 가능하고, 집적밀도가 높이며, 각 구성소정의 특성열화가 적고 또 수율이 높은 반도체장치를 제공하는 것을 그 목적으로 한다. 본 발명의 반도체장치의 옴전극은, GaAs 기판(1)상에 AuGe/Ni합금층(27), WSi층(18C) 및 Au층(17d)이 순차 적층된 구조를 지니고 있다. 상기 WSi층(18C)에 의해서 전극의 평탄성이 유지되고 또 Au층(17d)에 의해서 전극의 저저항화가 도모된다.An object of the present invention is to provide a semiconductor device having high productivity, low resistance of an ohmic electrode, high integration density, low characteristic degradation of each component, and high yield. The ohmic electrode of the semiconductor device of the present invention has a structure in which AuGe / Ni alloy layer 27, WSi layer 18C and Au layer 17d are sequentially stacked on GaAs substrate 1. The WSi layer 18C maintains the flatness of the electrode, and the Au layer 17d reduces the resistance of the electrode.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제3도는 상기 형성공정의 순서도.3 is a flow chart of the forming process.
제6도는 본 발명의 일실시예의 옴극구조의 합금회전의 상태를 도시한 단면도.6 is a cross-sectional view showing the state of the alloy rotation of the ohmic structure of one embodiment of the present invention.
제7도는 제6도의 구조에 의해 형성된 옴전극 구조를 지닌 FET의 평면도.7 is a plan view of an FET having an ohmic electrode structure formed by the structure of FIG.
제8도(a) 내지 제8도(h)는 본 발명의 일실시예에 있어서의 옴전극구조의 형성방법의 공정을 도시한 단면도.8A to 8H are cross-sectional views showing the steps of a method of forming an ohmic electrode structure in one embodiment of the present invention.
제9도는 그 공정의 순서도.9 is a flowchart of the process.
제10도는 본 발명의 일실시예의 옴전극구조의 단면도.10 is a cross-sectional view of an ohmic electrode structure of one embodiment of the present invention.
제11도(a)내지 제11도(f)는 본 발명의 일실시예에 있어서의 옴전극구조의 형성방법의 공정을 도시한 단면도.11A to 11F are cross-sectional views showing the steps of a method of forming an ohmic electrode structure in one embodiment of the present invention.
제12도는 본 발명의 일실시예에 있어서의 반도체장치의 배선구조의 단면도.12 is a cross-sectional view of a wiring structure of a semiconductor device according to one embodiment of the present invention.
제13도(a) 내지 제13도(d)는 본 발명의 일실시예에 있어서의 반도체장치의 배선구조의 배선구조의 형성방법의 공정을 도시한 단면도.13A to 13D are cross-sectional views showing a process for forming a wiring structure of a wiring structure of a semiconductor device in one embodiment of the present invention.
제14도(a)내지 제14도(d)는 본 발명의 일실시예에 있어서의 저항 및 그 주변배선의 제조방법의 공정을 도시한 단면도.14 (a) to 14 (d) are cross-sectional views showing a process of a method of manufacturing a resistance and a peripheral wiring in an embodiment of the present invention.
Claims (14)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4575192A JPH05167063A (en) | 1991-10-15 | 1992-03-03 | Ohmic electrode, its formation method and semiconductor device |
| JP92-45751 | 1992-03-03 | ||
| JP5540892 | 1992-03-13 | ||
| JP6229992 | 1992-03-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR930020586A true KR930020586A (en) | 1993-10-20 |
Family
ID=26396300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930003079A KR930020586A (en) | 1992-03-03 | 1993-03-03 | Wiring structure and ohmic electrode of semiconductor device and method of forming them |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH05326518A (en) |
| KR (1) | KR930020586A (en) |
| TW (1) | TW225038B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07183377A (en) * | 1993-12-24 | 1995-07-21 | Nec Corp | Semiconductor device |
| JP5314963B2 (en) * | 2008-08-12 | 2013-10-16 | 富士フイルム株式会社 | LAMINATE, PIEZOELECTRIC ELEMENT, AND LIQUID DISCHARGE DEVICE |
| JP5371329B2 (en) * | 2008-08-29 | 2013-12-18 | 富士フイルム株式会社 | Piezoelectric element and liquid ejection device |
-
1993
- 1993-02-02 JP JP5015480A patent/JPH05326518A/en active Pending
- 1993-03-02 TW TW082101527A patent/TW225038B/zh active
- 1993-03-03 KR KR1019930003079A patent/KR930020586A/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| TW225038B (en) | 1994-06-11 |
| JPH05326518A (en) | 1993-12-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |