KR930015064A - 갈륨비소 금속반도체 전계효과 트랜지스터의 제조방법 - Google Patents
갈륨비소 금속반도체 전계효과 트랜지스터의 제조방법 Download PDFInfo
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- KR930015064A KR930015064A KR1019910024510A KR910024510A KR930015064A KR 930015064 A KR930015064 A KR 930015064A KR 1019910024510 A KR1019910024510 A KR 1019910024510A KR 910024510 A KR910024510 A KR 910024510A KR 930015064 A KR930015064 A KR 930015064A
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- film
- ohmic electrode
- photolithography
- ion implantation
- field effect
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 6
- 230000005669 field effect Effects 0.000 title claims abstract 5
- 229910052751 metal Inorganic materials 0.000 title claims abstract 4
- 239000002184 metal Substances 0.000 title claims abstract 4
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims abstract 17
- 239000000758 substrate Substances 0.000 claims abstract 7
- 238000005468 ion implantation Methods 0.000 claims abstract 6
- 238000000206 photolithography Methods 0.000 claims abstract 6
- 230000001681 protective effect Effects 0.000 claims abstract 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract 5
- 239000010703 silicon Substances 0.000 claims abstract 5
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract 4
- 239000010409 thin film Substances 0.000 claims abstract 4
- 238000000151 deposition Methods 0.000 claims abstract 3
- 238000010438 heat treatment Methods 0.000 claims abstract 3
- 239000004065 semiconductor Substances 0.000 claims abstract 3
- 238000001459 lithography Methods 0.000 claims abstract 2
- 239000002019 doping agent Substances 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 238000000313 electron-beam-induced deposition Methods 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2258—Diffusion into or out of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
- H01L21/26553—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
- H01L21/2656—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds characterised by the implantation of both electrically active and inactive species in the same semiconductor region to be doped
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
- H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
- H01L29/66863—Lateral single gate transistors
- H01L29/66871—Processes wherein the final gate is made after the formation of the source and drain regions in the active layer, e.g. dummy-gate processes
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
본 발명은 갈륨비소 금속반도체 전계효과 트랜지스터를 제조하는 방법에 관한 것으로, 반절연 반도체기판(1)상에 규소박막(105)을 증착하고, 포토리소그라피에 의해 감광막(102a)으로 채널영역을 정의한 후 n형 불순물을 1차 이온주입하고, 고농도 도핑용 n+리소그라피에 의해 감광막(102b)으로 오옴전극 접합영역을 정의한 후 2차 이온주입하고, 상기 감광막(102b)을 제거한 후 보호막(107)을 기판표면 전체에 증착하고 이어 열처리하며, 상기 열처리 공정이 완료된 후 상기 보호막(107)과 상기 규소박막(105)을 차례로 제거하고, 오믹전극용 마스크를 포토리소그라피 하여 감광막으로 오믹전극의 패턴을 형성한후 기판표면을 리세스 에치하여 손상영역을 제거한후 오믹전극(104)을 형성하고 합금화하며, 게이트용 마스크를 사용한 포토리소그라피로 게이트 패턴을 형성한후 기판표면을 리세스 에치하여 손상영역을 제거한후 게이트(109)를 형성하는 단계들을 포함한다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도의 (A) 내지 (G)는 본 발명에 따른 오옴전극 형성방법에 의해 GaAs MESFET를 제조하는 방법을 설명하기 위한 공정단면도.
Claims (6)
- 갈륨비소 전계효과 트랜지스터를 제조하는 방법에 있어서, 반절연 반도체기판(1)상에 규소박막(105)을 증착하는 공정과, 포토리소그라피에 의해 감광막(102a)으로 채널영역을 정의한 후 n형 도우펀트를 1차 이온주입하는 공정과, 고농도 도핑 n+리소그라피에 의해 감광막(102b)으로 오옴전극 접합영역을 정의한 후 2차 이온주입하는 공정과, 상기 감광막(102b)을 제거한 후 보호막(107)을 기판표면 전체에 증착하고 이어 열처리하는 공정과, 상기 열처리 공정이 완료된 후 상기 보호막(107)과 상기 규소박막(105)을 순차로 제거하는 공정과, 오믹전극용 마스크를 포토리소그라피 하여 감광막으로 오믹전극의 패턴을 형성한후 기판표면을 리세스 에치하여 손상영역을 제거한후 오믹전극(104)을 형성하고 합금화하는 공정 및, 게이트용 마스크를 사용한 포토리소그라피로 게이트 패턴을 형성한 후 기판표면을 리세스 에치하여 손상영역을 제거한 후 게이트(109)를 형성하는 공정을 포함하는 것을 특징으로 하는 갈륨비소 금속반도체 전계효과 트랜지스터의 제조방법.
- 제1항에 있어서, 상기 1차 이온주입공정에서 주입되는 상기 n형 도우펀트는 Si, Se 또는 S인 것을 특징으로 하는 갈륨비소 금속반도체 전계효과 트랜지스터의 제조방법.
- 제1항에 있어서, 상기 2차 이온주입공정에서 주입되는 도우펀트는 P형 혹은 As인 것을 특징으로 하는 갈륨비소 금속반도체 전계효과 트랜지스터의 제조방법.
- 제1항에 있어서, 상기 보호막(107)은 규소산화막, 규소질화막, 규소산화질화막, 또는 알루미늄 질화막인 것을 특징으로 하는 갈륨비소 금속반도체 전계효과 트랜지스터의 제조방법.
- 제1항 또는 제4항에 있어서, 상기 보호막(107)은 화학증착법, 스퍼터링법, 플라즈마 화학증착법, 또는 전자선 증착법으로 형성되는 것을 특징으로 하는 갈륨비소 금속반도체 전계효과 트랜지스터의 제조방법.
- 제1항에 있어서, 상기 열처리공정은 적어도 800℃ 온도에서 수행되는 것을 특징으로 하는 갈륨비소 금속반도체 전계효과 트랜지스터의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910024510A KR940007668B1 (ko) | 1991-12-26 | 1991-12-26 | 갈륨비소 금속반도체 전계효과 트랜지스터의 제조방법 |
US07/996,052 US5314833A (en) | 1991-12-26 | 1992-12-23 | Method of manufacturing GaAs metal semiconductor field effect transistor |
JP4344202A JPH0766926B2 (ja) | 1991-12-26 | 1992-12-24 | GaAs MESFETの製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910024510A KR940007668B1 (ko) | 1991-12-26 | 1991-12-26 | 갈륨비소 금속반도체 전계효과 트랜지스터의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR930015064A true KR930015064A (ko) | 1993-07-23 |
KR940007668B1 KR940007668B1 (ko) | 1994-08-22 |
Family
ID=19326132
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910024510A KR940007668B1 (ko) | 1991-12-26 | 1991-12-26 | 갈륨비소 금속반도체 전계효과 트랜지스터의 제조방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US5314833A (ko) |
JP (1) | JPH0766926B2 (ko) |
KR (1) | KR940007668B1 (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05299441A (ja) * | 1992-04-24 | 1993-11-12 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタの製造方法 |
US5518938A (en) * | 1995-05-08 | 1996-05-21 | United Microelectronics Corporation | Process for fabricating a CMOS transistor having high-voltage metal-gate |
US6171949B1 (en) * | 1999-06-09 | 2001-01-09 | Advanced Micro Devices, Inc. | Low energy passivation of conductive material in damascene process for semiconductors |
TW468233B (en) | 2000-09-16 | 2001-12-11 | Univ Nat Yunlin Sci & Tech | Apparatus and measurement method of hysteresis and time shift for ISFET containing amorphous silicon hydride sensing membrane |
US6458640B1 (en) * | 2001-06-04 | 2002-10-01 | Anadigics, Inc. | GaAs MESFET having LDD and non-uniform P-well doping profiles |
KR100950482B1 (ko) * | 2008-06-26 | 2010-03-31 | 주식회사 하이닉스반도체 | 포토레지스트막 제거방법 |
US8273649B2 (en) | 2008-11-17 | 2012-09-25 | International Business Machines Corporation | Method to prevent surface decomposition of III-V compound semiconductors |
JP5737948B2 (ja) * | 2008-12-26 | 2015-06-17 | ルネサスエレクトロニクス株式会社 | ヘテロ接合電界効果トランジスタ、ヘテロ接合電界トランジスタの製造方法、および電子装置 |
US8993451B2 (en) * | 2011-04-15 | 2015-03-31 | Freescale Semiconductor, Inc. | Etching trenches in a substrate |
FR3026557B1 (fr) * | 2014-09-26 | 2018-03-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Procede de dopage d'un semi-conducteur a base de gan |
CN108321080A (zh) * | 2017-12-21 | 2018-07-24 | 秦皇岛京河科学技术研究院有限公司 | 高可靠性的SiC MOSFET器件的制备方法及其结构 |
KR102456957B1 (ko) | 2019-05-17 | 2022-10-21 | 한국전자통신연구원 | 전계효과 트랜지스터 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4298403A (en) * | 1980-02-28 | 1981-11-03 | Davey John E | Ion-implanted evaporated germanium layers as n+ contacts to GaAs |
DE3476841D1 (en) * | 1983-11-29 | 1989-03-30 | Fujitsu Ltd | Compound semiconductor device and method of producing it |
US4656076A (en) * | 1985-04-26 | 1987-04-07 | Triquint Semiconductors, Inc. | Self-aligned recessed gate process |
DE3576610D1 (de) * | 1985-12-06 | 1990-04-19 | Ibm | Verfahren zum herstellen eines voellig selbstjustierten feldeffekttransistors. |
DE3685495D1 (de) * | 1986-07-11 | 1992-07-02 | Ibm | Verfahren zur herstellung einer unteraetzten maskenkontur. |
JPS63173318A (ja) * | 1987-01-13 | 1988-07-16 | Toshiba Corp | 化合物半導体の熱処理方法 |
KR910006702B1 (ko) * | 1988-12-01 | 1991-08-31 | 재단법인 한국전자통신연구소 | T형 게이트 형상을 가진 자기 정합 mesfet의 제조방법 |
US5073512A (en) * | 1989-04-21 | 1991-12-17 | Nec Corporation | Method of manufacturing insulated gate field effect transistor having a high impurity density region beneath the channel region |
-
1991
- 1991-12-26 KR KR1019910024510A patent/KR940007668B1/ko not_active IP Right Cessation
-
1992
- 1992-12-23 US US07/996,052 patent/US5314833A/en not_active Expired - Lifetime
- 1992-12-24 JP JP4344202A patent/JPH0766926B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0621099A (ja) | 1994-01-28 |
JPH0766926B2 (ja) | 1995-07-19 |
US5314833A (en) | 1994-05-24 |
KR940007668B1 (ko) | 1994-08-22 |
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