KR930014774A - 기판상의 박막 구조를 포함한 복합 구조 및 그 제조방법 - Google Patents

기판상의 박막 구조를 포함한 복합 구조 및 그 제조방법 Download PDF

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KR930014774A
KR930014774A KR1019920022768A KR920022768A KR930014774A KR 930014774 A KR930014774 A KR 930014774A KR 1019920022768 A KR1019920022768 A KR 1019920022768A KR 920022768 A KR920022768 A KR 920022768A KR 930014774 A KR930014774 A KR 930014774A
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layer
substrate
relative
composite structure
thin
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KR1019920022768A
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KR100272017B1 (ko
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미칼렉 폴
커크버그 존
라이스 죤
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프레데릭 얀 스미트
엔.브이.필립스 글로아이람펜파브리켄
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
    • G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
    • G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
    • G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details
    • G11B5/3113—Details for improving the magnetic domain structure or avoiding the formation or displacement of undesirable magnetic domains
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/28—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
    • H01F10/30—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the intermediate layers, e.g. seed, buffer, template, diffusion preventing, cap layers

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Magnetic Heads (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)

Abstract

단일 정의역 자기요소를 형성하는데 충분히 허용되는 표면의 평탄함은 날카로운 모서리 및 구석을 평평하게 하기 위하여 연마층(14)을 동일물질의 박층(16)으로 덮음으로써 얻어진다. 그 결과 얻어지는 구조는 박막 자기 헤드에서 유용하다.

Description

기판상의 박막구조를 포함한 복합 구조 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 방법에 따라 생산된 것으로서 기판과 실질적으로 단일 정의역 자기요소를 지지하는 복합절연층을 포함하는 복합 구조 일부의 단면도.
제2도는 제1도의 복합층 구조를 편입한 결합쓰기/읽기 박막 자기헤드의 한 실시예의 단면도.

Claims (23)

  1. 기판상의 박막 구조를 포함하며 상기 기판상에 절연층을 형성하는 단계 및 상기 절연층상에 자기요소를 형성하는 단계를 포함하는 복합 구조 제조방법에 있어서 상기 절연층이 우선 절연물질로 된 상대적 후층을 침착시키고 그후 상기 상대적 후층 위에 같은 물질로 된 상대적 박층을 침착시킴으로써 형성된 복합층인 것을 특징으로 하는 복합구조 제조방법.
  2. 제1항에 있어서 상대적 후층과 박층이 약8대 40정도의 두께의 비를 달성하도록 침착되는 복합구조 제조방법.
  3. 제1항에 있어서 상대적 후층의 표면이 톱니모양 자국을 포함하는 복합구조 제조방법.
  4. 제3항에 있어서 상기 상대적 박층이 상기 표면의 톱니모양 자국의 평균깊이의 약 2내지 10배의 두께로 침착되는 복합구조 제조방법.
  5. 제4항에 있어서 상기 상대적 박층이 약 0.75에서 1.5미크론의 두께로 침착되는 복합구조 제조방법.
  6. 제1항에 있어서 상기 상대적 후층과 박층이 모두 같은 기술로 침착되는 복합구조 제조방법.
  7. 제6항에 있어서 상기 후층과 박층이 모두 스피터 침착되는 복합구조 제조방법.
  8. 제1항에 있어서 상기 상대적 후층이 상기 상대적 박층의 형선전에 연마되는 복합구조 제조방법.
  9. 제8항에 있어서 연마하는 것이 기계적인 겹치기(lapping)가 동반되는 복합구조 제조방법.
  10. 제1항에 있어서 상기 절연물질이 AL2O3인 복합구조 제조방법.
  11. 제1항에 있어서 상기 기판이 비자성인 복합구조 제조방법.
  12. 제11항에 있어서 상기 비자성기판이 다수요로서 TiC를 소수요소로서 AL2O3, SiO2, 및 MgO를 포함하는 복합구조 제조방법.
  13. 제12항에 있어서 상기 기판의 합성이 무게 백분율로 63 내지 70 Al2O3, 이고 27내지 37 TiC을 포함하는 복합구조 제조방법.
  14. 제1항에 있어서 상기 기판이 상대적 후층의 형성전에 연마되는 복합구조 제조방법.
  15. 제1항에 있어서 상기 자기요소상에 제2절연층을 형성하는 단계와, 두 부분, 즉 전방부분과 후방부분이 측면에서 공간적으로 떨어져 있으면서 상기 자기요소의 끝부분 위에 놓인 위치로부터 전방 및 후방으로 확장하는 상기 두 부분과 상기 하위 선속유도층 및 제1선속경로를 규정짓는 상기 자기요소를 구성하는 상기 제2절연층 상의 하위선속 유도층을 형성하는 단계와, 상기 하위선속 유도층 상에 제3절연층을 형성하는 단계와 제2선속 경로를 규정짓는 상기 제3절연층상의 상부 선속 유도층을 형성하는 단계와 상기 하부선속 유도층의 전방 부분과 상기 제3절연층 및 상기 헤드 페이드(head face)까지 확장하는 상기 상부선속 유도층을 포함하는 적어도 몇개의 층 및 헤드의 상기 읽기 간극을 규정지을 층들간의 상기 유전층 두께를 포함하는 복합구조 제조방법.
  16. 기판과 상기 기판상의 절연물질인 복합층과 상기 기판상에 상대적 후층과 상기 상대적 후층상에 있는 상기 복합 절연층상의 실질적 단일 정의 역 자기요소를 포함하는 복합구조 제조방법.
  17. 제16항에 있어서 상대적 후층 및 박층 두께의 비가 약 8대40의 복합구조.
  18. 제16항에 있어서 상기 상대적 후층의 표면이 톱니모양 자국을 갖는 복합구조.
  19. 제18항에 있어서 상기 상대적 박층이 상기 표면의 톱니모양 자국의 평균깊이의 약 2내지 10배의 두께로 침착되는 복합구조 제조방법.
  20. 제19항에 있어서 상기 상대적 박층의 두께가 약 0.75미크론에서 105미크론인 복합구조.
  21. 제16항에 있어서 상기 절연물질이 Al2O3인 복합구조.
  22. 자기매체상에 최소한의 읽기 정보를 위해 제16항의 상기 복합 구조를 포함하는 박막 자기헤드.
  23. 제16항에 있어서 상기 복합구조를 포함하는 결합 읽기/쓰기 박막자기 헤드.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920022768A 1991-12-03 1992-11-28 기판 상의 박막 구조체를 포함하는 복합구조 및 그 제조 방법 KR100272017B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US801,241 1991-12-03
US07/801,241 US5269895A (en) 1991-05-21 1991-12-03 Method of making composite structure with single domain magnetic element

Publications (2)

Publication Number Publication Date
KR930014774A true KR930014774A (ko) 1993-07-23
KR100272017B1 KR100272017B1 (ko) 2000-12-01

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KR1019920022768A KR100272017B1 (ko) 1991-12-03 1992-11-28 기판 상의 박막 구조체를 포함하는 복합구조 및 그 제조 방법

Country Status (5)

Country Link
US (2) US5269895A (ko)
EP (1) EP0546604B1 (ko)
JP (1) JPH05266421A (ko)
KR (1) KR100272017B1 (ko)
DE (1) DE69222007T2 (ko)

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US11133029B2 (en) * 2018-12-19 2021-09-28 International Business Machines Corporation Tape head with element-to-element spacing and adjustment and mechanism to control the spacing

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Also Published As

Publication number Publication date
US5995336A (en) 1999-11-30
EP0546604A1 (en) 1993-06-16
KR100272017B1 (ko) 2000-12-01
JPH05266421A (ja) 1993-10-15
DE69222007D1 (de) 1997-10-09
DE69222007T2 (de) 1998-02-26
US5269895A (en) 1993-12-14
EP0546604B1 (en) 1997-09-03

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