KR930013222A - 국부 용융역 형성법을 이용한 망간-아연 페라이트 단결정의 제조방법 및 그 장치 - Google Patents

국부 용융역 형성법을 이용한 망간-아연 페라이트 단결정의 제조방법 및 그 장치 Download PDF

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KR930013222A
KR930013222A KR1019910025721A KR910025721A KR930013222A KR 930013222 A KR930013222 A KR 930013222A KR 1019910025721 A KR1019910025721 A KR 1019910025721A KR 910025721 A KR910025721 A KR 910025721A KR 930013222 A KR930013222 A KR 930013222A
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South Korea
Prior art keywords
crucible
crystal
manganese
zinc ferrite
single crystal
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KR1019910025721A
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English (en)
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KR0157323B1 (ko
Inventor
선우국현
마재용
김태훈
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황선두
삼성전기 주식회사
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Priority to KR1019910025721A priority Critical patent/KR0157323B1/ko
Priority to US07/950,214 priority patent/US5268061A/en
Priority to JP04256036A priority patent/JP3112577B2/ja
Publication of KR930013222A publication Critical patent/KR930013222A/ko
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Publication of KR0157323B1 publication Critical patent/KR0157323B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/24—Complex oxides with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. ortho ferrites
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Abstract

본 발명은 원료를 용융시킨 다음 이를 재차 일부분만이 액상이 되도록 도가니의 온도를 하강시킨후 모세관 현상을 이용하여 망간-아연(Mn-Ferrite)단결정을 제조하는 방법 및 그 장치에 관한 것이다.
구체적으로는 서로 다른 온도로 유지되는 발열체를 도가니의 외부에 설치하여 결정성장시 도가니내에 용융역(Liquid Pool), 고액공존역(Semi-Rigid Regio), 고상역(Solid Regio)의 세 영역이 공존하도록 온도분포를 정밀 제어할수 있도록 하고, 상기 도가니의 상부에 형성된 결정 인발부에 내부애 보조발열체가 설치된 석영관을 설치한 후 플링로드(Pulling Rod)를 사용하여 결정을 인발하도록 함으로서 도가니와 용액의 접촉부위를 최소화시켜 백금(Pt)의 혼입을 극소화시킨 망간-아연 페라이트 단결정의 제조방법 및 그 장치에 관한 것이다.

Description

국부 용융역 형성법을 이용한 망간-아연 페라이트 단결정의 제조방법 및 그 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 의한 망간-아연 페라이트 단결정 성장장치의 개략도.

Claims (4)

  1. 도가니내의 용액이 액상역, 고액공존역 및 고상역의 세영역이 공존하도록 하여 용융된 액상과 도가니의 접촉부위가 극소화되도록 한 후 결정인발부를 통해 단결정이 성장되도록 한 것을 특징으로 하는 국부 용융역 형성법을 이용한 망간-아연 페라이트 단결정의 제조방법.
  2. 제1항에 있어서, 결정성장이 진행되는 동안 액상역과 도가니 상부 사이의 온도가 용융재료의 융점보다 50~100℃높게 유지되도록 하고, 도가니 하부의 온도가 융점보다 8~`5℃낮게 유지되도록 온도를 제어함을 특징으로 하는 국부 용융역 형성법을 이용한 망간-아연 페라이트 단결정의 제조방법.
  3. 제1항에 있어서, 상기 결정인발부와 접하는 도가니 연결부의 높이를 액상역의 높이보다 낮게 형성하여 모세관 현상에 의해 용액이 결정인발부로 서서히 올라오게 한 것을 특징으로 하는 국부 용융역 형성법을 이용한 망간-아연 페라이트 단결정의 제조방법.
  4. 망간-아연 페라이트 단결정을 제조하는 장치에 있어서, 상부 중앙에 결정인발부(2)를 가진 도가니 연결부(25)가 형성되고 일측에 원료터블릿 주입구(3) 및 산소주입구(4)가 형성된 도가니(1)의 측면에 제1발열체(8)를 형성하고 상기 도가니(1)의 상부에는 상기 제1발열체(8)와 상이한 온도로 제어되는 제2발열체(9) 및 각부위의 온도를 감지하는 열전대(16,17,18,19)를 설치하며, 상기 결정인발부(2)의 상부로는 보조발열체(11)를 내장하고 질소주입구(12)를 가진 석영관(10) 및 종결정(14)이 장착되는 풀링로드(13)와 상기 풀링로드를 이송하는 핀치롤(15)을 설치한 것을 특징으로 하는 국부 용융역 형성법을 이용한 망간-아연 페라이트 단결정의 제조장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910025721A 1991-12-31 1991-12-31 국부 용융역 형성법을 이용한 망간-아연 페라이트 단결정의 제조방법 및 그 장치 KR0157323B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019910025721A KR0157323B1 (ko) 1991-12-31 1991-12-31 국부 용융역 형성법을 이용한 망간-아연 페라이트 단결정의 제조방법 및 그 장치
US07/950,214 US5268061A (en) 1991-12-31 1992-09-24 Method and apparatus for producing a manganese-zinc ferrite single crystal using a local liquid pool formation
JP04256036A JP3112577B2 (ja) 1991-12-31 1992-09-25 マンガン−亜鉛フェライト単結晶の製造方法および装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910025721A KR0157323B1 (ko) 1991-12-31 1991-12-31 국부 용융역 형성법을 이용한 망간-아연 페라이트 단결정의 제조방법 및 그 장치

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KR930013222A true KR930013222A (ko) 1993-07-21
KR0157323B1 KR0157323B1 (ko) 1999-02-18

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DE19605858A1 (de) * 1996-02-16 1997-08-21 Claussen Nils Verfahren zur Herstellung von Al¶2¶O¶3¶-Aluminid-Composites, deren Ausführung und Verwendung
JPH10152389A (ja) * 1996-11-21 1998-06-09 Komatsu Electron Metals Co Ltd 半導体単結晶の製造装置および製造方法
JP3523986B2 (ja) * 1997-07-02 2004-04-26 シャープ株式会社 多結晶半導体の製造方法および製造装置
JP3992800B2 (ja) * 1997-09-22 2007-10-17 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶製造装置および単結晶の製造方法
JP3573045B2 (ja) * 2000-02-08 2004-10-06 三菱住友シリコン株式会社 高品質シリコン単結晶の製造方法
US20050066881A1 (en) * 2003-09-25 2005-03-31 Canon Kabushiki Kaisha Continuous production method for crystalline silicon and production apparatus for the same
US20050261612A1 (en) * 2004-05-18 2005-11-24 Zadick Hazan Vibrations driven through natural mammalian conduits for biofilm prevention
US20070141233A1 (en) * 2005-12-21 2007-06-21 United Technologies Corporation EB-PVD system with automatic melt pool height control
US8350180B2 (en) * 2010-03-12 2013-01-08 United Technologies Corporation High pressure pre-oxidation for deposition of thermal barrier coating with hood
US20110223354A1 (en) * 2010-03-12 2011-09-15 United Technologies Corporation High pressure pre-oxidation for deposition of thermal barrier coating
JP6060403B1 (ja) * 2015-11-11 2017-01-18 並木精密宝石株式会社 サファイア部材製造装置およびサファイア部材の製造方法
KR200489725Y1 (ko) 2019-04-04 2019-07-29 성상일 식품토출장치
US11274379B2 (en) * 2020-02-26 2022-03-15 Ii-Vi Delaware, Inc. System for growing crystal sheets

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JPS54121108A (en) * 1978-03-13 1979-09-20 Akai Electric Mnnzn ferrite monocrystal magnetic head and method of fabricating same
JPS55128801A (en) * 1979-03-28 1980-10-06 Fuji Elelctrochem Co Ltd Manufacture of large single crystal of ferrite with uniform composition
US4402787A (en) * 1979-05-31 1983-09-06 Ngk Insulators, Ltd. Method for producing a single crystal
NL8005312A (nl) * 1980-09-24 1982-04-16 Philips Nv Werkwijze voor het vervaardigen van ferriet eenkristallen.
JPS5792591A (en) * 1980-11-28 1982-06-09 Ngk Insulators Ltd Production of single crystal
JPS58125696A (ja) * 1982-01-22 1983-07-26 Hitachi Ltd Ｍｎ−Ｚｎフエライト単結晶の製造方法
JPS6046993A (ja) * 1983-08-23 1985-03-14 Sumitomo Electric Ind Ltd 単結晶引上装置

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Publication number Publication date
KR0157323B1 (ko) 1999-02-18
JPH0640799A (ja) 1994-02-15
US5268061A (en) 1993-12-07
JP3112577B2 (ja) 2000-11-27

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