KR930003289A - 종형 열 처리장치 - Google Patents

종형 열 처리장치 Download PDF

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Publication number
KR930003289A
KR930003289A KR1019920012385A KR920012385A KR930003289A KR 930003289 A KR930003289 A KR 930003289A KR 1019920012385 A KR1019920012385 A KR 1019920012385A KR 920012385 A KR920012385 A KR 920012385A KR 930003289 A KR930003289 A KR 930003289A
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KR
South Korea
Prior art keywords
heat treatment
treatment apparatus
cap
vertical heat
vertical
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KR1019920012385A
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English (en)
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KR0171618B1 (ko
Inventor
히로쓰구 시라이와
사토시 가가쓰메
다카시 도자와
Original Assignee
이노우에 아키라
도오교오 에레구토론 가부시끼가이샤
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Application filed by 이노우에 아키라, 도오교오 에레구토론 가부시끼가이샤 filed Critical 이노우에 아키라
Publication of KR930003289A publication Critical patent/KR930003289A/ko
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Publication of KR0171618B1 publication Critical patent/KR0171618B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/912—Differential etching apparatus having a vertical tube reactor

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

내용 없음.

Description

종형 열 처리장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발멸의 열처리장치의 일실시예를 나타내는 반쪽부분을 절단한 평면도,
제2도는 제1도에 나타내는 본 발명의 열처리장치에 매니폴드 및 보온통을 부가한 경우의 Ⅱ-Ⅱ선에서 본 단면도,
제3도는 제1도에 나타낸 열처리장치의 동작을 나타내는 종단면도로서,
제3도 (A)는 보트 엘레베이터를 화살표 C방향으로 상승시키고 있는 도면을, 또
제3도 (B)는 보트 엘레베이터를 더욱 상승시켜서 캡을 맨폴드의 개구부에 맞닿게 한 도면을 나타낸다,
제4도는 본 발명의 열처리장치의 다른 실시예를 나타내는 반쪽 부분을 절단한 평면도,
제5도는 제4도에 나타내는 본 발명의 열처리장치에 매니폴드 및 보온통을 부가한 경우의 V-V선에서 본 단면도.

Claims (6)

  1. 프로세스 튜브(4)내에 웨이퍼 보트(18)에 재치된 피처리체를 수용하여 피처리체의 열처리를 하는 종형 열처리 장치로서, 상기 프로세스 튜브(4)의 개구부(19)측으로 매니폴드(6)의 개구부(19)를 개폐하는 캡(26)과, 상기 웨이퍼 보트(18)의 상하운동기구에 설치되어 캡(26)을 탄성적으로 지지하는 지지기구(28)와, 상하운동기구와 캡(26)과의 사이에 배열설치되어 캡(26)측의 기밀성을 유지하는 신축가능한 기밀 유지수단을 구비한 것을 특징으로 하는 종형 열처리 장치.
  2. 제1항에 있어서, 상기 지지기구(38)가, 상기 캡(26)의 같은 위 쪽 원주방향으로 소정각도만 변위한 위치를 지지하는 스프링(46)을 끼운 지지축(40)으로 되는 종형 열처리장치.
  3. 제1항에 있어서, 상기 상하운동기구가 보트 엘레베이터(22)로 되는 것을 특징으로 하는 종형열처러장치.
  4. 제1항에 있어서, 상기 기밀유지수단이, 벨로우즈(58)로 되는 것을 특징으로 하는 종형열처리장치.
  5. 제1항에 있어서, 상기 기밀유지수단의 주위에 수냉 자켓트(50c)를 배열설치한 것을 특징으로하는 종형열처리장치.
  6. 제1항에 있어서, 상기 피처리체가 반도체 웨이퍼(2)인 것을 특징으로 하는 종형열처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920012385A 1991-07-11 1992-07-11 종형 열처리장치 KR0171618B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP03198937A JP3140096B2 (ja) 1991-07-11 1991-07-11 熱処理装置
JP91-198937 1991-07-11

Publications (2)

Publication Number Publication Date
KR930003289A true KR930003289A (ko) 1993-02-24
KR0171618B1 KR0171618B1 (ko) 1999-03-30

Family

ID=16399453

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920012385A KR0171618B1 (ko) 1991-07-11 1992-07-11 종형 열처리장치

Country Status (3)

Country Link
US (1) US5224999A (ko)
JP (1) JP3140096B2 (ko)
KR (1) KR0171618B1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2548062B2 (ja) * 1992-11-13 1996-10-30 日本エー・エス・エム株式会社 縦型熱処理装置用ロードロックチャンバー
US5796074A (en) * 1995-11-28 1998-08-18 Applied Materials, Inc. Wafer heater assembly
KR100224659B1 (ko) * 1996-05-17 1999-10-15 윤종용 종형 기상 성장 장치용 캡
DE19919326A1 (de) * 1999-04-28 2000-11-02 Leybold Systems Gmbh Kammer für eine chemische Dampfbeschichtung
KR100426987B1 (ko) * 2001-07-10 2004-04-13 삼성전자주식회사 반도체 제조용 종형의 저압화학기상증착 장치
KR100422452B1 (ko) * 2002-06-18 2004-03-11 삼성전자주식회사 로드락 챔버용 스토리지 엘리베이터 샤프트의 실링장치
JP6208588B2 (ja) 2014-01-28 2017-10-04 東京エレクトロン株式会社 支持機構及び基板処理装置
CN205980793U (zh) * 2016-08-12 2017-02-22 深圳市捷佳伟创新能源装备股份有限公司 一种低压扩散炉炉门密封装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4640223A (en) * 1984-07-24 1987-02-03 Dozier Alfred R Chemical vapor deposition reactor
IT1228401B (it) * 1988-03-29 1991-06-14 Hauni Werke Koerber & Co Kg Procedimento e dispositivo per la fabbricazione di un filone di tabacco.
JPH04308090A (ja) * 1991-04-05 1992-10-30 M B K Maikurotetsuku:Kk 気相化学反応生成装置のロードロック機構

Also Published As

Publication number Publication date
JP3140096B2 (ja) 2001-03-05
KR0171618B1 (ko) 1999-03-30
US5224999A (en) 1993-07-06
JPH0521421A (ja) 1993-01-29

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