KR910018581A - 디렉트 모니터링 전기로를 이용한 수직온도 구배냉각 화합물 반도체 단결정 성장장치 - Google Patents

디렉트 모니터링 전기로를 이용한 수직온도 구배냉각 화합물 반도체 단결정 성장장치 Download PDF

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KR910018581A
KR910018581A KR1019900004653A KR900004653A KR910018581A KR 910018581 A KR910018581 A KR 910018581A KR 1019900004653 A KR1019900004653 A KR 1019900004653A KR 900004653 A KR900004653 A KR 900004653A KR 910018581 A KR910018581 A KR 910018581A
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electric furnace
direct monitoring
crystal growth
single crystal
vertical
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KR1019900004653A
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KR930005015B1 (ko
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민석기
박승철
한철원
박용주
심광보
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박원희
한국과학기술연구원
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Priority to JP3022076A priority patent/JPH0672076B2/ja
Priority to US07/672,563 priority patent/US5135726A/en
Publication of KR910018581A publication Critical patent/KR910018581A/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/22—Heating of the molten zone by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1012—Apparatus with means for measuring, testing, or sensing with a window or port for visual observation or examination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

내용 없음.

Description

디렉트 모니터링 전기로를 이용한 수직온도 구배냉각 화합물 반도체 단결정 성장장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명 장치의 전체적인 구성을 보인 일부절결 정면도, 제2도는 제1도의 디렉트 모니터링 전기로를 발췌하여 보인 확대도, 제3도는 본 발명에 따른 수직온도 구배냉각 단결정 성장장치의 전형적인 온도분포를 보인 그래프.

Claims (7)

  1. 한쌍의 평행한 가이드레일(3)(3′)이 하부지지대(2)상에 수직입설되고, 각기 상,하부 연결판(5)(5′a)(5b)(5′b)을 개재하여 디렉트 모니터링 전기로(6) 및 저온부전기로(7)와 일체로 형성된 상,하부슬라이더(4)(4′a)(4b)(4′b)가 상기 양 가이드레일(3)(3′)의 외주면상에 상,하이송 가능하게 설치되며, 저온부전기로(7)의 중앙 하부로는 상면에 반응관지지대(27)를 구비한 회전장치(26)가 장착되어 이루어짐을 특징으로 하는 디렉트 모니터링 전기로를 이용한 수직온도구배냉각 단결정 성장장치.
  2. 제1항에 있어서, 드렉트 모니터링 전기로(6)는 내벽면에 금박막(10)이 도포되고 외벽면에 냉각유출입공(11)(12)이 형성된 이중석영관(13)의 안쪽으로 원통형의 보호용석영관(14)이 설치되며, 보호용석영관(14)의 내측으로 두 영역이 상으로 구분된 스파이럴상의 열선(15)이 장착됨에 있어서 열선(15)주위에 인접 열선간의 접촉 방지를 위한 알루미나 재질의 스페이서(16)를 끼워 그 스페이서(16)를 상,하부세라믹지지대(17)(17′) 사이에 형성된 세라믹 지지관(18)(18′)에 접착고정시켜 이루어짐을 특징으로 하는 디렉트 모니터링 전기로를 이용한 수직온도구배냉각 단결정 성장장치.
  3. 제1항에 있어서, 디렉트 모니터링 전기로(6)와 저온부전기로(7)간의 연결부에 고리형의 세라믹단열재(20)가 형성됨을 특징으로 하는 디렉트 모니터링 전기로를 이용한 수직온도구배냉각 단결정 성장장치.
  4. 제1항에 있어서, 디렉트 모니터링 전기로(6) 및 저온부전기로(7)와 일체로 형성된 상,하부슬라이더(4)(4′a)(4b)(4′b)는 구동수크류(9)의 구동에 의해서 상,하수직이송이 가능하도록 구성됨을 특징으로 하는 디렉트 모니터링 전기로를 이용한 수직온도구배냉각 단결정 성장장치.
  5. 제4항에 있어서, 상부슬라이더(4a)(4′a)와 하부슬라이더(4b)(4′b)사이에 케넥터(8)(8′)가 착탈가능하게 설치되어 케넥터(8)(8′)의 분리 및 장착에 따라 디렉트 모니터링 전기로(6) 및 저온부전기로(7)의 수직상하이송이 동시에 또는 독립적으로 수행되도록 구성됨을 특징으로 하는 디렉트 모니터링 전기로를 이용한 수직온도구배냉각 단결정 성장장치.
  6. 제1항에 있어서, 회전장치(26)상부에 형성된 반응관지지대(27)의 내측에 장착된 반응관받침대(29)상부에 정, 역회전이 가능한 결정성장용반응관(30)이 설치됨을 특징으로 하는 디렉트 모니터링 전기로를 이용한 수직온도구배냉각 단결정 성장장치.
  7. 제5항에 있어서, 반응관받침대(29)는 상단면이 평면을 이루며 수직중심부를 따라 열전대용구멍(28)이 천공됨을 특징으로 하는 디렉트 모니터링 전기로를 이용한 수직온도구배냉각 단결정 성장장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019900004653A 1990-04-04 1990-04-04 디렉트 모니터링 전기로를 이용한 수직온도구배냉각 화합물 반도체 단결정 성장장치 KR930005015B1 (ko)

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Application Number Priority Date Filing Date Title
KR1019900004653A KR930005015B1 (ko) 1990-04-04 1990-04-04 디렉트 모니터링 전기로를 이용한 수직온도구배냉각 화합물 반도체 단결정 성장장치
JP3022076A JPH0672076B2 (ja) 1990-04-04 1991-02-15 垂直温度勾配冷却単結晶成長装置
US07/672,563 US5135726A (en) 1990-04-04 1991-03-20 Vertical gradient freezing apparatus for compound semiconductor single crystal growth

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Application Number Priority Date Filing Date Title
KR1019900004653A KR930005015B1 (ko) 1990-04-04 1990-04-04 디렉트 모니터링 전기로를 이용한 수직온도구배냉각 화합물 반도체 단결정 성장장치

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KR910018581A true KR910018581A (ko) 1991-11-30
KR930005015B1 KR930005015B1 (ko) 1993-06-11

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KR (1) KR930005015B1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0772116B2 (ja) * 1991-02-15 1995-08-02 信越半導体株式会社 単結晶引上装置
US5438953A (en) * 1992-03-19 1995-08-08 Mitsui Mining & Smelting Co., Ltd. Crystal growth apparatus
US5656079A (en) * 1993-02-26 1997-08-12 The United States Of America As Represented By The Air Force Statement of government interest
KR0176328B1 (ko) * 1995-12-19 1999-03-20 김은영 축방향 자기장을 인가할 수 있는 수직온도 구배냉각 및 수직브릿지만 화합물 반도체 단결정 성장장치
JP3201305B2 (ja) 1996-04-26 2001-08-20 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体結晶の製造方法
JP4135239B2 (ja) * 1997-12-26 2008-08-20 住友電気工業株式会社 半導体結晶およびその製造方法ならびに製造装置
JP3509556B2 (ja) * 1998-06-03 2004-03-22 日立電線株式会社 単結晶の製造方法および製造装置
US20030172870A1 (en) * 2002-03-14 2003-09-18 Axt, Inc. Apparatus for growing monocrystalline group II-VI and III-V compounds
CN104165898A (zh) * 2014-08-21 2014-11-26 共慧冶金设备科技(苏州)有限公司 大温度梯度布里奇曼炉
TWI833617B (zh) * 2023-03-24 2024-02-21 國立勤益科技大學 晶體生長裝置

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US4242175A (en) * 1978-12-26 1980-12-30 Zumbrunnen Allen D Silicon refining process
US4404172A (en) * 1981-01-05 1983-09-13 Western Electric Company, Inc. Method and apparatus for forming and growing a single crystal of a semiconductor compound
US4863553A (en) * 1982-11-15 1989-09-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of preparing radially homogenous mercury cadmium telluride crystals
US4904336A (en) * 1987-04-28 1990-02-27 The Furukawa Electric Co., Ltd. Method of manufacturing a single crystal of compound semiconductor and apparatus for the same
KR910006743B1 (ko) * 1988-07-05 1991-09-02 한국과학기술원 디렉트 모니터링(Direct Monitoring)전기로를 이용한 수평브리지만(Bridgman)단결정성장장치

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Publication number Publication date
JPH059091A (ja) 1993-01-19
US5135726A (en) 1992-08-04
KR930005015B1 (ko) 1993-06-11
JPH0672076B2 (ja) 1994-09-14

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