KR930003252A - 반도체 장치의 접촉플러그 제조방법 - Google Patents
반도체 장치의 접촉플러그 제조방법 Download PDFInfo
- Publication number
- KR930003252A KR930003252A KR1019910011259A KR910011259A KR930003252A KR 930003252 A KR930003252 A KR 930003252A KR 1019910011259 A KR1019910011259 A KR 1019910011259A KR 910011259 A KR910011259 A KR 910011259A KR 930003252 A KR930003252 A KR 930003252A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- layer
- semiconductor device
- contact hole
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000004065 semiconductor Substances 0.000 title claims 9
- 238000000034 method Methods 0.000 title claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 238000005468 ion implantation Methods 0.000 claims 5
- 238000009792 diffusion process Methods 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 238000002844 melting Methods 0.000 claims 3
- 230000008018 melting Effects 0.000 claims 3
- 229910021332 silicide Inorganic materials 0.000 claims 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 3
- 230000003213 activating effect Effects 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910021645 metal ion Inorganic materials 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2(A)∼(E)도는 이 발명에 따른 접촉플러그 제조공정도,
제3도는 이 발명에 따른 다른 실시예의 접촉플러그 단면도.
Claims (3)
- 반도체장치의 제조방법에 있어서, 제1도전형의 반도체기판의 소정부분에 제2도전형의 확산영역을 형성하는 과정과, 상기 반도체기판의 상부에 절연막을 형성하는 과정과, 상기 절연막의 소정부분은 제거하여 확산영역이 노출되도록 접촉구를 형성하는 과정과, 상술한 구조의 전표면에 실리콘층을 형성하고 고융점금속의 이온주입층을 형성한 후 열처리하여 실리사이드화하는 공정을 적어도 1회 반복하는 과정과, 상기 실리사이드층의 상부에 상기 접촉구가 메워지도록 실리콘층을 형성하는 과정과, 상기 접촉구를 제외한 실리콘층 및 금속실리사이드층을 제거하는 과정과, 상기 접촉구를 매몰시킨 실리콘층에 고융점금속의 이온주입층을 형성하는 과정과, 상기 이온주입층의 금속이온을 활성화시켜 실리콘층을 실리사이드화하는 과정을 구비하는 반도체장치의 접촉플러그 제조방법.
- 제1항에 있어서, 상기 실리콘층을 다결정실리콘 또는 비정실리콘 중 어느 하나로 형성하는 것을 특징으로 하는 반도체장치의 접촉플러그 형성방법.
- 반도체 장치의 제조방법에 있어서, 제1도전형의 반도체기판의 소정부분에 제2도전형의 확산영역을 형성하는 과정과, 상기 반도체기판의 상부에 절연막을 형성하는 과정과, 상기 절연막의 소정부분을 제거하여 접촉구를 형성하는 과정과, 상기 확산영역의 상부에 선택적 에피층을 형성하고 고융점 금속의 이온주입층을 형성하는 고정을 1회 이상 반복하는 과정과, 상기 이온주입층을 열처리하여 선택적 에피층을 실리사이드화하는 과정을 구비한 반도체장치의 접촉플러그 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910011259A KR930011113B1 (ko) | 1991-07-03 | 1991-07-03 | 반도체장치의 접촉플러그 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910011259A KR930011113B1 (ko) | 1991-07-03 | 1991-07-03 | 반도체장치의 접촉플러그 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930003252A true KR930003252A (ko) | 1993-02-24 |
| KR930011113B1 KR930011113B1 (ko) | 1993-11-24 |
Family
ID=19316712
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910011259A KR930011113B1 (ko) | 1991-07-03 | 1991-07-03 | 반도체장치의 접촉플러그 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR930011113B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100713939B1 (ko) * | 2006-05-30 | 2007-05-07 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
-
1991
- 1991-07-03 KR KR1019910011259A patent/KR930011113B1/ko not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100713939B1 (ko) * | 2006-05-30 | 2007-05-07 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR930011113B1 (ko) | 1993-11-24 |
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Payment date: 20011008 Year of fee payment: 9 |
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