KR920704193A - 광-개시 강산의 원으로서 열 안정성 카르바졸 디아조늄염 - Google Patents

광-개시 강산의 원으로서 열 안정성 카르바졸 디아조늄염

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Publication number
KR920704193A
KR920704193A KR1019920700250A KR920700250A KR920704193A KR 920704193 A KR920704193 A KR 920704193A KR 1019920700250 A KR1019920700250 A KR 1019920700250A KR 920700250 A KR920700250 A KR 920700250A KR 920704193 A KR920704193 A KR 920704193A
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KR
South Korea
Prior art keywords
phenyl
composition
photosensitizer
diazonium salt
benzyl
Prior art date
Application number
KR1019920700250A
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English (en)
Inventor
고오든 앤더어슨 앨버트
Original Assignee
미리엄 디이 메코너헤이
이 아이 듀우판 디 네모아 앤드 캄파니
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Application filed by 미리엄 디이 메코너헤이, 이 아이 듀우판 디 네모아 앤드 캄파니 filed Critical 미리엄 디이 메코너헤이
Publication of KR920704193A publication Critical patent/KR920704193A/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/52—Compositions containing diazo compounds as photosensitive substances
    • G03C1/54—Diazonium salts or diazo anhydrides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Indole Compounds (AREA)
  • Polymerisation Methods In General (AREA)
  • Epoxy Resins (AREA)
  • Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)

Abstract

내용 없음

Description

광-개시 강산의 원으로서 열 안정성 카르바졸 디아조늄염
[도면의 간단한 설명]
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (23)

  1. 하기 구조식의 카르바졸 디아조늄 염:
    상기식에서 Y는 RF6 -, AsF6 -, SbF6 -, FeCl4 -, SnCl6 -2또는 BiCl5 -2이고; R은 CxH2x+1(상기 X는 1-16), 벤질, 페닐, 치환된 벤질, 치환된 페닐 및 시클로알킬로 구성된 군으로부터 선택되며, 단, 상기 -N2Y가 식
    II에서 처럼 "1"위치에 있다면, R은 페닐 또는 치환된 페닐이 아니다.
  2. 근본적으로 (a) 에폭시초기-중합체; (b) 하기 구조식들로부터 선택된 카르바졸 디아조늄 염:
    상기식에서 Y는 BF4 -, RF6 -, AsF6 -, SbF6 -, FeCl4 -, SnCl6 -2, SbCl6 -또는 BiCl5 -2이고; R은 CxH2x+1(상기 X는 1-16), 벤질, 페닐, 치환된 벤질, 치환된 페닐 및 시클로알킬로 구성된 군으로부터 선택되며, 단, 상기 -N2Y가 상기 II에서 처럼 "1"위치에 있다면, R은 페닐 또는 치환된 페닐이 아니다.
    (c) 임의로 광증감제; (d) (a)의 에폭시초기-중합체 및 (b)의 카르바졸 디아조늄 염; 및 임의 광증감제를 용해시킬 수 있는 용매로 구성된, 연장된 기간동안 분해없이 암저장이 가능한, 광활성화 된 중합가능한 조성물.
  3. 제2항에 있어서, 카르바졸 디아조늄 염의 농도가 5-30 중량/부피%의 범위내인 조성물
  4. 제3항에 있어서, 용액내초기-중합체의 농도가 10-30 중량/부피%의 범위내인 조성물.
  5. 제2항에 있어서, 초기-중합체가 오르토크레졸포름알데히드 노볼락수지의 폴리글리시딜 에테르인 조성물.
  6. 제2항에 있어서, 용매가 셀로솔브, 아세토니트릴. 또는 그들의 혼합물인 조성물.
  7. 제6항에 있어서, 용매가 셀로솔브 및 아세트니트릴의 50/50(부피/부피)혼합물인 조성물.
  8. 제2항에 있어서, 광증감제를 함유하는 조성물.
  9. 제8항에 있어서, 광증감제가 9-10-디메틸 안트라센인 조성물.
  10. 제2항에 기술된 조성물로 이루어진 필름.
  11. 제10항의 필름으로 코우팅된 지지체.
  12. 제11항에 있어서, 알루미늄, 유리 및 플라스틱으로 이루어진 군으로부터 선택된 지지체.
  13. 제2항의 조성물로 코우팅된 감광성 내식막.
  14. 중합이 선택적인 광증감제 및 용매의 존재하에서, 광개시된 강산의 작용에 의해 개시되는, 단량체 또는 초기-중합체 에폭시 물질의 중합 방법에 있어서, 강산의 원으로서, 하기 구조식의 카르바졸 디아조늄 염을 사용함을 개선점으로 하는 중합방법.
    상기식에서 Y는 BF4 -, RF6 -, AsF6 -, SbF6 -, FeCl4 -, SnCl6 -2, SbCl6 -또는 BiCl5 -2이고; R은 CxH2x+1(상기 X는 1-16), 벤질, 페닐, 치환된 벤질, 치환된 페닐 및 시클로알킬로 구성된 군으로부터 선택되며, 단, 상기 -N2Y가 상기 II에서 처럼 "1"위치에 있다면, R은 페닐 또는 치환된 페닐이 아니다.
  15. 제14항에 있어서, 사용된 초기-중합체가 오르토크레졸포름알데히드 노블락 수지의 폴리글리시딜 에테르인 방법.
  16. 제14항에 있어서, 용매가 셀로솔브 및 아세토니트릴의 혼합물인 방법.
  17. 제14항에 있어서, 광증감제가 사용되는 방법.
  18. 제17항에 있어서, 사용된 광증감제가 9, 10-디메틸안트라센인 방법.
  19. 강산이, 임의 광증감제 및 임의 용매의 존재하에서, 방사에너지 원에 노출시 생성되는, 중합체 구조로부터 보호기의 강산 개시된 제거방법에 있어서, 강산의 원으로서, 하기 구조식의 카르바졸 디아조늄 염을 사용함을 개선점으로 하는 방법.
    상기식에서 Y는 BF4 -, RF6 -, AsF6 -, SbF6 -, FeCl4 -, SnCl6 -2, SbCl6 -또는 BiCl5 -2이고; R은 CxH2x+1(상기 X는 1-16), 벤질, 페닐, 치환된 벤질, 치환된 페닐 및 시클로알킬로 구성된 군으로부터 선택되며, 단, 상기 -N2Y가 상기 II에서 처럼 "1"위치에 있다면, R은 페닐 또는 치환된 페닐이 아니다.
  20. 제19항에 있어서, 용액내의 디아조늄 염의 농도가 5-30중량/부피%의 범위내인 방법.
  21. 제1항에 있어서, 에너지 개시된 산의 원으로서 사용된 화합물.
  22. 광증감제의 임의의 존재 및 용매의 임의의 존재하에서 제1항의 카르바졸 디아조늄 염을 입사 에너지원에 노출시킴으로 구성되는 강산 생성방법.
  23. 제22항에 있어서, 에너지 원이 X-레이, 자외선 및 E-비임선으로부터 선택되는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920700250A 1989-08-02 1990-07-12 광-개시 강산의 원으로서 열 안정성 카르바졸 디아조늄염 KR920704193A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US388404 1989-08-02
US07/388,404 US5002856A (en) 1989-08-02 1989-08-02 Thermally stable carbazole diazonium salts as sources of photo-initiated strong acid
PCT/US1990/003814 WO1991002288A1 (en) 1989-08-02 1990-07-12 Thermally stable carbazole diazonium salts as sources of photo-initiated strong acid

Publications (1)

Publication Number Publication Date
KR920704193A true KR920704193A (ko) 1992-12-19

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Country Status (6)

Country Link
US (1) US5002856A (ko)
EP (1) EP0485455A1 (ko)
JP (2) JPH0784444B2 (ko)
KR (1) KR920704193A (ko)
CA (1) CA2064183A1 (ko)
WO (1) WO1991002288A1 (ko)

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JPH07196777A (ja) 1995-08-01
JP2504392B2 (ja) 1996-06-05
JPH04503364A (ja) 1992-06-18
US5002856A (en) 1991-03-26
CA2064183A1 (en) 1991-02-03
EP0485455A1 (en) 1992-05-20
JPH0784444B2 (ja) 1995-09-13
WO1991002288A1 (en) 1991-02-21

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