KR920701512A - 진공용기 - Google Patents

진공용기

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Publication number
KR920701512A
KR920701512A KR1019910700622A KR910700622A KR920701512A KR 920701512 A KR920701512 A KR 920701512A KR 1019910700622 A KR1019910700622 A KR 1019910700622A KR 910700622 A KR910700622 A KR 910700622A KR 920701512 A KR920701512 A KR 920701512A
Authority
KR
South Korea
Prior art keywords
semiconductor wafer
chamber
disposed
wafer
processing apparatus
Prior art date
Application number
KR1019910700622A
Other languages
English (en)
Other versions
KR930007150B1 (ko
Inventor
에스. 와인버그 리챠드
Original Assignee
윌리엄 알. 무어
배리언 어소시에이츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 알. 무어, 배리언 어소시에이츠 인코포레이티드 filed Critical 윌리엄 알. 무어
Publication of KR920701512A publication Critical patent/KR920701512A/ko
Application granted granted Critical
Publication of KR930007150B1 publication Critical patent/KR930007150B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

내용 없음

Description

진공용기
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 신규의 클램셀 장치를 구현하는 주진공실의 개략도, 제2도는 제1도의 클램셀 장치의 확대도, 제3도는 클램셀 장치의 일부분의 대체 실시예를 도시하는 도면.

Claims (10)

  1. 주 진공실내에서 반도체 웨이퍼를 처리할 수 있는 장치에 있어서, 웨이퍼 홀더, 상기 웨이퍼 홀더위에 배치되는 제1부재와 웨이퍼 홀더아래에 배치되어 상기 제1부재를 향하는 제2부재를 구비하는 클램셀 장치 및, 상기 클램셸 장치가 폐쇄 위치에 있을때 상기 주진공실의 내실로부터 외부로 가스를 배출시키기 위한 수단을 구비하고 있는데, 상기 제1부재와 제2부재는 그 각각이 각각의 결합면을 가지며 상기 제1부재의 결합면이 상기 제2부재의 결합면과 밀폐 결합되는 개방 위치와 폐쇄 위치 사이에서 이동 가능하고, 상기 클램셀 장치는 상기 폐쇄 위치에 있을때 상기 내실을 형성하는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  2. 제1항에 있어서, 상기 제1부재와 제2부재중 하나의 상기 결합면은 채널과 채널내에 배치되는 O-링을 구비하는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  3. 제1항에 있어서, 상기 클램셸 장치가 폐쇄 위치에 있을때 상기 웨이퍼를 냉각시키기 위한 수단을 부가로 구비하는 것을 특징으로 하는 반도체 우에퍼 처리장치.
  4. 제3항에 있어서, 상기 냉각 수단은, 상기 웨이퍼가 제2부재의 내면과 접촉하도록 웨이퍼 홀더를 내실내에 위치시키기 위한 수단과, 상기 제2부재내에 냉각제를 유입시키기 위한 수단을 구비하는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  5. 제3항에 있어서, 상기 냉각 수단은 클램셸 장치가 폐쇄 위치에 있을때 가스를 내실로 주입시키는 수단을 포함하며, 상기 가스는 진공 수단에 의하여 배출되는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  6. 제5항에 있어서, 상기 주입수단은 제1부재에 배치되며 내실과 연통하는 개구부를 갖는 끼워맞춤부를 포함하며, 상기 끼워맞춤부는 진공실의 외부 가스원에 결합되기에 적합한 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  7. 제6항에 있어서, 상기 주입 수단은 내실로 주입된 가스를 살포시키도록 개구에 인접한 내실내에 배치된 배플을 포함하는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  8. 제1항에 있어서, 상기 제1부재는 광 복사가 웨이퍼를 가열하기 위하여 창을 통하여 보내질 수 있도록 보이지 않게 밀봉된 광 투명 창을 포함하는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
  9. 제1항에 있어서, 상기 진공 수단은 제1부재에 배치되며 연통하는 개구부를 갖는 끼워맞춤부를 포함하며, 상기 끼워맞춤부는 진공실 외부의 진공 펌프에 결합되기에 적합한 것을 특징으로 하는 반도체 웨이퍼 처리장치 .
  10. 제1항에 있어서, 상기 웨이퍼 홀더는 복수개의 수직 핀과, 제2부재를 통하여 배치된 복수개의 개구부를 포함하며, 상기 핀의 각각은 개구부중 하나에 배치되며, 상승 위치와 하강 위치사이에 활주 가능하며, 상기 웨이퍼는 상기 핀이 하강 위치에 있을때 제2부재와 접촉하는 것을 특징으로 하는 반도체 웨이퍼 처리장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910700622A 1989-10-18 1990-10-18 진공용기 KR930007150B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US423802 1982-09-27
US423,802 1989-10-18
US07/423,802 US5002010A (en) 1989-10-18 1989-10-18 Vacuum vessel
PCT/US1990/005994 WO1991005887A1 (en) 1989-10-18 1990-10-18 Vacuum vessel

Publications (2)

Publication Number Publication Date
KR920701512A true KR920701512A (ko) 1992-08-11
KR930007150B1 KR930007150B1 (ko) 1993-07-30

Family

ID=23680239

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910700622A KR930007150B1 (ko) 1989-10-18 1990-10-18 진공용기

Country Status (5)

Country Link
US (1) US5002010A (ko)
EP (1) EP0448700A4 (ko)
JP (1) JPH0774447B2 (ko)
KR (1) KR930007150B1 (ko)
WO (1) WO1991005887A1 (ko)

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Also Published As

Publication number Publication date
WO1991005887A1 (en) 1991-05-02
JPH03504522A (ja) 1991-10-03
EP0448700A4 (en) 1993-03-24
EP0448700A1 (en) 1991-10-02
JPH0774447B2 (ja) 1995-08-09
KR930007150B1 (ko) 1993-07-30
US5002010A (en) 1991-03-26

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