KR920020259A - 수소 실세스퀴옥산 수지로부터 제조된 팬턴회된 피복물 - Google Patents

수소 실세스퀴옥산 수지로부터 제조된 팬턴회된 피복물 Download PDF

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Publication number
KR920020259A
KR920020259A KR1019920006718A KR920006718A KR920020259A KR 920020259 A KR920020259 A KR 920020259A KR 1019920006718 A KR1019920006718 A KR 1019920006718A KR 920006718 A KR920006718 A KR 920006718A KR 920020259 A KR920020259 A KR 920020259A
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KR
South Korea
Prior art keywords
coating
hydrogen silsesquioxane
silsesquioxane resin
pantonized
coating made
Prior art date
Application number
KR1019920006718A
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English (en)
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KR100214111B1 (ko
Inventor
앤드류 할루스카 로렌
윈톤 마이클 케이트
Original Assignee
노만 에드워드 루이스
다우 코닝 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 노만 에드워드 루이스, 다우 코닝 코포레이션 filed Critical 노만 에드워드 루이스
Publication of KR920020259A publication Critical patent/KR920020259A/ko
Application granted granted Critical
Publication of KR100214111B1 publication Critical patent/KR100214111B1/ko

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Paints Or Removers (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Formation Of Insulating Films (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

내용 없음

Description

수소 실세스퀴옥산 수지로부터 제조된 패턴화된 피복물
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (3)

  1. 수소 실세스퀴옥산 수지 및 개시제를 포함하는 피복물을 기질 위에 적용시키고; 피복물의 조사된 영역을 경화시키기에 충분한 시간동안 피복물의 선택된 영역을 조사하고; 미경화된 수소 실세스퀴옥산 수지를 용해시키는데 효과적인 용매를 사용하여 세정함으로써 미경화된 피복물을 제거함을 특징으로 하여, 기질 위에 패턴화된 피복물을 제조하는 방법.
  2. 제1항에 있어서, 기질 위에 패턴화된 피복물을 패턴화된 피복물을 세라믹화하기에 충분한 온도로 열분해시키는 방법.
  3. 용매, 수소 실세스퀴옥산 수지 및 개시제를 포함하는 액체 조성물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920006718A 1991-04-22 1992-04-22 전자 장치 위에 패턴화된 도막을 형성시키는 방법 KR100214111B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/688,418 1991-04-22
US7/688,418 1991-04-22
US07/688,418 US5238787A (en) 1991-04-22 1991-04-22 Photodelineable coatings from hydrogen silsesquioxane resin

Publications (2)

Publication Number Publication Date
KR920020259A true KR920020259A (ko) 1992-11-20
KR100214111B1 KR100214111B1 (ko) 1999-08-02

Family

ID=24764345

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920006718A KR100214111B1 (ko) 1991-04-22 1992-04-22 전자 장치 위에 패턴화된 도막을 형성시키는 방법

Country Status (7)

Country Link
US (2) US5238787A (ko)
EP (1) EP0510872B1 (ko)
JP (1) JP2997124B2 (ko)
KR (1) KR100214111B1 (ko)
CA (1) CA2064971A1 (ko)
DE (1) DE69222461T2 (ko)
TW (1) TW223153B (ko)

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US5631120A (en) * 1994-09-02 1997-05-20 Motorola, Inc. Method of forming a pattern with step features in a photopolymer
JP3499032B2 (ja) * 1995-02-02 2004-02-23 ダウ コーニング アジア株式会社 放射線硬化性組成物、その硬化方法及びパターン形成方法
US5609925A (en) * 1995-12-04 1997-03-11 Dow Corning Corporation Curing hydrogen silsesquioxane resin with an electron beam
US5733698A (en) * 1996-09-30 1998-03-31 Minnesota Mining And Manufacturing Company Release layer for photoreceptors
DE69806824T2 (de) * 1997-02-07 2003-02-27 Dow Corning Verfahren zur Herstellung von Überzügen auf Elektronikteilen
JP3415741B2 (ja) * 1997-03-31 2003-06-09 東レ・ダウコーニング・シリコーン株式会社 電気絶縁性薄膜形成用組成物および電気絶縁性薄膜の形成方法
US6743856B1 (en) 1997-04-21 2004-06-01 Honeywell International Inc. Synthesis of siloxane resins
US6015457A (en) * 1997-04-21 2000-01-18 Alliedsignal Inc. Stable inorganic polymers
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
EP0881668A3 (en) 1997-05-28 2000-11-15 Dow Corning Toray Silicone Company, Ltd. Deposition of an electrically insulating thin film with a low dielectric constant
US5958630A (en) * 1997-12-30 1999-09-28 Kabushiki Kaisha Toshiba Phase shifting mask and method of manufacturing the same
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
US6218020B1 (en) 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
DE19815978B4 (de) * 1998-04-09 2004-01-08 Forschungszentrum Karlsruhe Gmbh Verfahren zur Herstellung von Klein- und Mikroteilen aus Keramik
GB9812425D0 (en) 1998-06-10 1998-08-05 Dow Corning Electroless metal disposition on silyl hyride functional resin
US6177143B1 (en) * 1999-01-06 2001-01-23 Allied Signal Inc Electron beam treatment of siloxane resins
US6472076B1 (en) 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6440550B1 (en) * 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
US6335152B1 (en) * 2000-05-01 2002-01-01 Advanced Micro Devices, Inc. Use of RTA furnace for photoresist baking
JP2005506578A (ja) * 2001-10-19 2005-03-03 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ サブミクロン幅のパターンを形成する方法
FR2872503B1 (fr) * 2004-07-05 2006-09-22 Commissariat Energie Atomique Procede de fabrication d'une ebauche de biopuce, ebauche et biopuce
US8088547B2 (en) * 2004-11-02 2012-01-03 Dow Corning Corporation Resist composition
EP1835344A1 (en) * 2005-01-05 2007-09-19 Sekisui Chemical Co., Ltd. Silicon-containing photosensitive composition, method for forming thin film pattern using same, protective film for electronic device, gate insulating film and thin film transistor
JP4925084B2 (ja) * 2005-09-14 2012-04-25 独立行政法人日本原子力研究開発機構 ケイ素系混合高分子材料による炭化ケイ素（ＳｉＣ）薄膜の合成法
KR20090123851A (ko) * 2007-03-01 2009-12-02 아사히 가라스 가부시키가이샤 발수성 영역의 패턴을 갖는 처리 기재, 그 제조 방법, 및 기능성 재료의 막으로 이루어지는 패턴이 형성된 부재의 제조 방법
US8158338B2 (en) * 2008-07-08 2012-04-17 Massachusetts Institute Of Technology Resist sensitizer
US8323866B2 (en) * 2008-07-08 2012-12-04 Massachusetts Institute Of Technology Inorganic resist sensitizer
FI129480B (en) * 2018-08-10 2022-03-15 Pibond Oy Silanol-containing organic-inorganic hybrid coatings for high-resolution patterning
KR102155966B1 (ko) 2019-09-04 2020-09-14 성인식 농작물 지지대

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Also Published As

Publication number Publication date
JP2997124B2 (ja) 2000-01-11
US5238787A (en) 1993-08-24
JPH05204161A (ja) 1993-08-13
TW223153B (ko) 1994-05-01
EP0510872B1 (en) 1997-10-01
DE69222461D1 (de) 1997-11-06
KR100214111B1 (ko) 1999-08-02
DE69222461T2 (de) 1998-04-09
US5348839A (en) 1994-09-20
CA2064971A1 (en) 1992-10-23
EP0510872A1 (en) 1992-10-28

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