KR920017188A - Silicon Wet Etching Method - Google Patents

Silicon Wet Etching Method Download PDF

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Publication number
KR920017188A
KR920017188A KR1019910002091A KR910002091A KR920017188A KR 920017188 A KR920017188 A KR 920017188A KR 1019910002091 A KR1019910002091 A KR 1019910002091A KR 910002091 A KR910002091 A KR 910002091A KR 920017188 A KR920017188 A KR 920017188A
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KR
South Korea
Prior art keywords
wet etching
etching method
silicon wet
silicon
hno
Prior art date
Application number
KR1019910002091A
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Korean (ko)
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KR100205439B1 (en
Inventor
구홍섭
박권영
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910002091A priority Critical patent/KR100205439B1/en
Publication of KR920017188A publication Critical patent/KR920017188A/en
Application granted granted Critical
Publication of KR100205439B1 publication Critical patent/KR100205439B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

내용 없음No content

Description

실리콘 습식 식각방법Silicon Wet Etching Method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 실리콘의 습식 식각 상태 단면도, 제3도는 본 발명에 따른 NPN형 트랜지스터의 구조 단면도.2 is a cross-sectional view of a wet etching state of silicon according to the present invention, and FIG. 3 is a cross-sectional view of a structure of an NPN transistor according to the present invention.

Claims (1)

마스크로서 산화막을 사용하고, 화학용액으로서 HF : HNO3=1:130 비율의 불산/질산혼합용액을 사용하며, 약25℃이 상온에서 매초당 1회씩 상,하로 흔듬으로써 실리콘을 습식 에치하는 것을 특징으로 하는 실리콘 습식 식각방법.An oxide film is used as a mask, and a hydrofluoric acid / nitric acid mixture solution having a ratio of HF: HNO 3 = 1: 130 is used as a chemical solution. Silicon wet etching method, characterized in that. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019910002091A 1991-02-07 1991-02-07 Silicon wet etching method KR100205439B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910002091A KR100205439B1 (en) 1991-02-07 1991-02-07 Silicon wet etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910002091A KR100205439B1 (en) 1991-02-07 1991-02-07 Silicon wet etching method

Publications (2)

Publication Number Publication Date
KR920017188A true KR920017188A (en) 1992-09-26
KR100205439B1 KR100205439B1 (en) 1999-07-01

Family

ID=19310850

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910002091A KR100205439B1 (en) 1991-02-07 1991-02-07 Silicon wet etching method

Country Status (1)

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KR (1) KR100205439B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100542722B1 (en) * 1997-11-12 2006-04-12 삼성전자주식회사 Etching liquid composition for semiconductor device manufacturing and semiconductor device manufacturing method using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100542722B1 (en) * 1997-11-12 2006-04-12 삼성전자주식회사 Etching liquid composition for semiconductor device manufacturing and semiconductor device manufacturing method using the same

Also Published As

Publication number Publication date
KR100205439B1 (en) 1999-07-01

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