KR920022414A - Silicon Oxide Etching Method of Semiconductor Device - Google Patents

Silicon Oxide Etching Method of Semiconductor Device Download PDF

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Publication number
KR920022414A
KR920022414A KR1019910007707A KR910007707A KR920022414A KR 920022414 A KR920022414 A KR 920022414A KR 1019910007707 A KR1019910007707 A KR 1019910007707A KR 910007707 A KR910007707 A KR 910007707A KR 920022414 A KR920022414 A KR 920022414A
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KR
South Korea
Prior art keywords
silicon oxide
etching method
semiconductor device
oxide etching
oxide film
Prior art date
Application number
KR1019910007707A
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Korean (ko)
Other versions
KR930011906B1 (en
Inventor
김용헌
Original Assignee
문정환
금성일렉트론 주식회사
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Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910007707A priority Critical patent/KR930011906B1/en
Publication of KR920022414A publication Critical patent/KR920022414A/en
Application granted granted Critical
Publication of KR930011906B1 publication Critical patent/KR930011906B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Thin Film Transistor (AREA)

Abstract

내용 없음.No content.

Description

반도체 장치의 규소 산화막 식각방법Silicon Oxide Etching Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (1)

금속박막 증착전 규소 산화막의 식각 공정에 있어서, 불화 암모니움 2800cc와 탈이온수 0∼28리터및 인산 0∼2300cc로 식각액을 제조하여 규소 산화막을 20∼22℃에서 식각함을 특징으로 하는 반도체 장치의 규소 산화막 식각방법.In the etching process of the silicon oxide film before the deposition of the metal thin film, an etching solution is prepared using 2800 cc of ammonium fluoride, 0 to 28 liters of deionized water and 0 to 2300 cc of phosphoric acid to etch the silicon oxide film at 20 to 22 ° C. Silicon oxide etching method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019910007707A 1991-05-13 1991-05-13 Oxide film etching method of semiconductor device KR930011906B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910007707A KR930011906B1 (en) 1991-05-13 1991-05-13 Oxide film etching method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910007707A KR930011906B1 (en) 1991-05-13 1991-05-13 Oxide film etching method of semiconductor device

Publications (2)

Publication Number Publication Date
KR920022414A true KR920022414A (en) 1992-12-19
KR930011906B1 KR930011906B1 (en) 1993-12-22

Family

ID=19314369

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910007707A KR930011906B1 (en) 1991-05-13 1991-05-13 Oxide film etching method of semiconductor device

Country Status (1)

Country Link
KR (1) KR930011906B1 (en)

Also Published As

Publication number Publication date
KR930011906B1 (en) 1993-12-22

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