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Application filed by 박원근, 금성전선 주식회사filedCritical박원근
Priority to KR1019900016029ApriorityCriticalpatent/KR920008854A/en
Publication of KR920008854ApublicationCriticalpatent/KR920008854A/en
GaAs반도테 웨이퍼의 에칭 방법Etching method of GaAs bandote wafer
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
Claims (1)
GaAs반도테 웨이퍼를 에칭하는데 있어서, 에칭용액으로 암모니아수, 과산화수소 및 증류수를 5:1:1로 혼합한 용액을 사용하여 상온(25℃)에서 에칭함으로써 흠집 웨이퍼의 흠집을 제거하고 편평도를 개선시킴을 특징으로 하는 GaAs반도테 웨이퍼의 에칭 방법.In etching GaAs bandote wafers, the solution was etched at room temperature (25 ° C) using a solution of 5: 1: 1 mixed with ammonia water, hydrogen peroxide and distilled water as an etching solution to remove scratches and improve flatness of the scratched wafer. A method of etching a GaAs bandote wafer, characterized by the above-mentioned.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900016029A1990-10-081990-10-08
Etching method of GaAs semiconductor wafer
KR920008854A
(en)