KR920008871A - 고광선 투과성 방진막 그 제조방법 및 방진체 - Google Patents
고광선 투과성 방진막 그 제조방법 및 방진체 Download PDFInfo
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Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 방진체의 일예를 나타내는 단면도.
제2도는 본 발명의 고광선투과성 방진막의 몇가지예를 나타낸 단면도로, (A)는 겔막 단독으로 된것, (B)는 겔막에 단일의 반사방지층을 설비한것, (C)는 겔막에 고굴절율층과 저굴절층으로된 복합의 반사방지층을 설비한 것임.
제3도는 실시예1의 겔박막의 광선투과율을 나타낸 그래프.
Claims (16)
- 다가 금속의 산화물, 수산화물, 유기기함유 산화물 및 유기기 함유 수산화물로 구성된 군에서 선택된 적어도 1종의 투명한 겔로된 고광선 투과성 방진막.
- 제1항에 있어서, 상기 겔이 솔겔법에 의하여 형성된 것인 고광선 투과성 방진막.
- 제1항에 있어서, 상기 겔이 용매를 함유하는 것인 고광선 투과성 방진막.
- 제1항에 있어서, 금속이 규소, 알루미늄, 티타늄 및 지르코늄으로 된 군에서 선택된 적어도 1종인 고광선 투과성 방진막.
- 제1항에 있어서, 상기 겔이 식(1)Y-Rk 1… (1)식중, Y는 규소, 알루미늄, 티타늄, 및 지르코늄으로 된 군에서 선택된 금속원자이고, R1은 가수분해 가능한 1가기이고, k는 금속원자 y의 가수임, 의 화합물로 솔겔법으로 제조한 것인 고광성 투자성 방진막.
- 제1항에 있어서, 상기 겔이 규소, 알루미늄, 티타늄 및 지르코늄으로 된 군에서 선택된 금속의 알콕시드, 카복실레이트 질산염 또는 염화물으로 솔겔법으로 형성한 것인 고광선 투과성 방진막.
- 제1항에 있어서, 상기 겔이 미립자상의 산화물 또는 수산화물인 화합물로 솔겔법에 의하여 제조한 것인 고광선 투광성 방진막.
- 제1항에 있어서, 상기 겔이 실록산기, 실라놀기 및 오르가노 실릴기를 갖는 오르가노 실리카겔인 고광선 투과성 방진막.
- 제1항에 있어서, 상기 겔이(I)식(2)Rn-Y-R1 k-n…(2)식중 R는 1가의 탄화수소기 또는 치환탄화수소기이고, R1은 가수분해 가능한 1가의 기이고, Y는 규소, 알루미늄, 티타늄 및 지르코늄으로 된 군에서 선택한 금속원자이고, n은 1~k-1의 수이고, k는 금속원자 Y의 원자가수임. 화합물 또는 (Ⅱ)의 상기 (I)의 화합물 식(1)Y-R1 k…(1)식중, Y, R1및 k는 전술한 바와같음. 화합물의 조합으로 솔겔법으로 형성된 것인 고광선 투과성 방진막.
- 제9항에 있어서, 상기 겔이 식(2)Rn-Y-R1 k-a로 표시되는 화합물(I)및 식(1) YRI K로 표 TL되는 화합물(Ⅱ)를 가수분해 축합하여 얻어지는 올리고머 또는 폴리머를 원료로 하여 솔겔법으로 제조한 것인 고광선 투과성 방진막.
- 청구 제1항 기재의 겔 막위에 반사방지 막을 적층하여 된 고광선 투과성 방진막.
- 제11항에 있어서, 반사방지막이 비정질 퍼플루오로 불소수지로 된 것인 고광선 투과성 방진막.
- (I)식(1)Y-R1 k…(1)식중, Y는 규소, 알루미늄, 티타늄, 및 지르코늄으로 된 군에서 선택한 금속원자이고, R1은 가수분해 가능한 1가 기이고, k는 금속원자 Y의 원자기임.의 화합물 (Ⅱ)식(2)Rn-Y-R1 k-n…(2)식중 R는 1가의 탄화수소기 또는 치환탄화수소기이고, n은 1내지 k-1의 수이고, Y,R1및 k는 전술한 바와같음.의 화합물, 또는(Ⅲ)상기(I)의 화합물이 상기(Ⅱ)의 화합물과의 조합으로, 상기 화합물이 적어도 부분적으로 가수분해된 솔액을 제조하고 이 솔액을 상온 ~500℃의 온도에서 겔막으로 조막하는 것을 특징으로 하는 고광선 투과성 방진막의 제조방법.
- 제13항에 있어서, 겔막의 조막을 기판위에 솔액을 도포하고, 이 도포층을 상온 ~500℃의 온도에서 또한 솔액중의 액체 매체의 비등점보다도 낮은 온도에서 건조시키고, 이어서 기판에서 박리함으로써 행하는 고광선 투과성 방진막의 제조방법.
- 청구 제1항 기재의 고광성 투과성 방진막과 보지체가 일체화 되어서 된 방진체.
- 청구 제11항 기재의 고광성 투과성 방진막과 보지체가 일체화 되어서 된 방진체.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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JP90-277113 | 1990-10-16 | ||
JP1990-277113 | 1990-10-16 | ||
JP27711390 | 1990-10-16 |
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KR920008871A true KR920008871A (ko) | 1992-05-28 |
KR950002949B1 KR950002949B1 (ko) | 1995-03-28 |
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KR1019910018176A KR950002949B1 (ko) | 1990-10-16 | 1991-10-16 | 고광선 투과성 방진막, 그 제조방법 및 방진체 |
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US (2) | US5674624A (ko) |
EP (1) | EP0482821B1 (ko) |
KR (1) | KR950002949B1 (ko) |
AT (1) | ATE171791T1 (ko) |
CA (1) | CA2053518A1 (ko) |
DE (1) | DE69130280T2 (ko) |
ES (1) | ES2124697T3 (ko) |
TW (1) | TW271002B (ko) |
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- 1991-10-16 ES ES91309519T patent/ES2124697T3/es not_active Expired - Lifetime
- 1991-10-16 AT AT91309519T patent/ATE171791T1/de not_active IP Right Cessation
- 1991-10-16 DE DE1991630280 patent/DE69130280T2/de not_active Expired - Fee Related
- 1991-10-16 EP EP19910309519 patent/EP0482821B1/en not_active Expired - Lifetime
- 1991-10-16 KR KR1019910018176A patent/KR950002949B1/ko not_active IP Right Cessation
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6190491B1 (en) | 1995-12-21 | 2001-02-20 | Lawrence J. Sifel et al. | Organic shell blank and method for making same |
US6432506B1 (en) | 1995-12-21 | 2002-08-13 | Lawrence J. Sifel | Organic shell blank and method for making same |
KR20010086934A (ko) * | 2000-03-04 | 2001-09-15 | 양용진 | 박판 자개시트칩을 이용한 후판 자개시트의 제조방법과,이 제조방법에 의해 제조된 후판 자개시트 및 이 후판자개시트를 컷팅하여 얻은 장식문양을 적용한 현악기 |
Also Published As
Publication number | Publication date |
---|---|
TW271002B (ko) | 1996-02-21 |
ATE171791T1 (de) | 1998-10-15 |
EP0482821B1 (en) | 1998-09-30 |
ES2124697T3 (es) | 1999-02-16 |
US5674624A (en) | 1997-10-07 |
US5667726A (en) | 1997-09-16 |
DE69130280D1 (de) | 1998-11-05 |
EP0482821A1 (en) | 1992-04-29 |
CA2053518A1 (en) | 1992-04-17 |
DE69130280T2 (de) | 1999-04-08 |
KR950002949B1 (ko) | 1995-03-28 |
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