KR920007187A - 반도체 기억장치 - Google Patents

반도체 기억장치 Download PDF

Info

Publication number
KR920007187A
KR920007187A KR1019910015462A KR910015462A KR920007187A KR 920007187 A KR920007187 A KR 920007187A KR 1019910015462 A KR1019910015462 A KR 1019910015462A KR 910015462 A KR910015462 A KR 910015462A KR 920007187 A KR920007187 A KR 920007187A
Authority
KR
South Korea
Prior art keywords
holding
information
reading
transmitting
holding means
Prior art date
Application number
KR1019910015462A
Other languages
English (en)
Other versions
KR960006878B1 (ko
Inventor
가즈나리 이노우에
Original Assignee
시기 모리야
미쓰비시 뎅끼 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 시기 모리야, 미쓰비시 뎅끼 가부시끼가이샤 filed Critical 시기 모리야
Publication of KR920007187A publication Critical patent/KR920007187A/ko
Application granted granted Critical
Publication of KR960006878B1 publication Critical patent/KR960006878B1/ko

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1093Input synchronization
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1039Read-write modes for single port memories, i.e. having either a random port or a serial port using pipelining techniques, i.e. using latches between functional memory parts, e.g. row/column decoders, I/O buffers, sense amplifiers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/106Data output latches
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1075Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for multiport memories each having random access ports and serial ports, e.g. video RAM
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1087Data input latches

Abstract

내용 없음

Description

반도체 기억장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 한 실시예에 의한 듀얼포트 메모리에 포함되는 입출력회로의 구성을 표시하는 회로도,
제2도는 동실시예에 사용되는 클럭제네레이터의 구성을 표시하는 도면,
제3도는 제1도의 입출력회로의 동작을 설명하기 위한 파형도.

Claims (1)

  1. 복수의 정보를 기억하는 기억수단, 상기 기억수단에 기억된 정보를 시리얼로 판독하는 판독수단, 상기 판독수단에 의하여 판독된 정보를 유지하기 위한 제1의 유지수단, 상기 제1의 유지수단으로 부터 주어지는 정보를 유지하기 위한 제2의 유지수단, 상기 판독수단에 의하여 판독된 정보를 상기 제1의 유지수단으로 전송하는 제1의 전송수단, 상기 제1의 유지수단으로 부터 상기 제2의 유지수단으로 정보를 전송하는 제2의 전송수단, 상기 제2의 유지수단에 유지된 정보를 외부로 출력하는 출력수단 및 상기 제2의 전송수단에 의한 전송동작이 행하여진후 상기 출력수단에 의한 출력동작이 행하여지고, 그후 상기 제1의 전송수단에 의한 전송동작이 행하여지도록 제어를 행하는 제어수단을 구비한 반도체 기억장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910015462A 1990-09-12 1991-09-04 반도체 기억장치 KR960006878B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2-243007 1990-09-12
JP90-243007 1990-09-12
JP2243007A JPH04121893A (ja) 1990-09-12 1990-09-12 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR920007187A true KR920007187A (ko) 1992-04-28
KR960006878B1 KR960006878B1 (ko) 1996-05-23

Family

ID=17097505

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910015462A KR960006878B1 (ko) 1990-09-12 1991-09-04 반도체 기억장치

Country Status (4)

Country Link
US (1) US5229965A (ko)
JP (1) JPH04121893A (ko)
KR (1) KR960006878B1 (ko)
DE (1) DE4130205A1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0147398B1 (ko) * 1992-10-09 1998-12-01 로오라 케이 니퀴스트 랜덤 액세스 메모리
JP2985554B2 (ja) * 1993-02-03 1999-12-06 日本電気株式会社 記憶回路
US5457654A (en) * 1994-07-26 1995-10-10 Micron Technology, Inc. Memory circuit for pre-loading a serial pipeline
KR0167687B1 (ko) * 1995-09-11 1999-02-01 김광호 고속액세스를 위한 데이타 출력패스를 구비하는 반도체 메모리장치
US6154056A (en) * 1997-06-09 2000-11-28 Micron Technology, Inc. Tri-stating address input circuit
JP3983969B2 (ja) * 2000-03-08 2007-09-26 株式会社東芝 不揮発性半導体記憶装置
KR20040038081A (ko) * 2002-10-31 2004-05-08 주식회사 맥시멈 세탁물 건조용 행거

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182185A (ja) * 1982-04-19 1983-10-25 Nec Corp 半導体記憶装置
US4541075A (en) * 1982-06-30 1985-09-10 International Business Machines Corporation Random access memory having a second input/output port
JPS60119698A (ja) * 1983-12-01 1985-06-27 Fujitsu Ltd 半導体メモリ
JPS62226498A (ja) * 1986-03-28 1987-10-05 Hitachi Ltd 半導体記憶装置
JPH0682520B2 (ja) * 1987-07-31 1994-10-19 株式会社東芝 半導体メモリ

Also Published As

Publication number Publication date
DE4130205A1 (de) 1992-03-19
US5229965A (en) 1993-07-20
KR960006878B1 (ko) 1996-05-23
JPH04121893A (ja) 1992-04-22

Similar Documents

Publication Publication Date Title
KR880011803A (ko) 메모리 장치
KR940010097A (ko) 반도체 메모리 장치
KR850003610A (ko) 반도체 메모리 장치
KR890015157A (ko) 고속 디지탈 신호처리 프로세서
KR870003430A (ko) 반도체 집적 회로장치
KR950034777A (ko) 반도체 기억장치
KR890006003A (ko) 데이타 입출력 회로
KR910001771A (ko) 반도체 메모리 장치
KR960042730A (ko) 반도체기억장치
KR920002393A (ko) 자동차용 입력인터페이스
KR910015999A (ko) 반도체 메모리장치
KR920007187A (ko) 반도체 기억장치
KR910008730A (ko) 반도체 기억장치
KR920017115A (ko) 반도체기억장치
KR970012754A (ko) 반도체 메모리 및 그 기입 방법
KR850002641A (ko) 시프트 레지스터
KR920003314A (ko) 반도체 메모리장치
KR920702574A (ko) 반도체 집적회로
KR920006970A (ko) 반도체 메모리를 위한 시리얼 선택회로
KR920020491A (ko) 반도체기억장치의 독출회로
KR900019048A (ko) 반도체기억장치의 테스트회로
KR900010778A (ko) 반도체 메모리장치
KR920003769A (ko) 서라운드 제어회로
JPS54123841A (en) Semiconductor integrated memory element
KR890004238A (ko) 순차접근 기억장치

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee