KR910013469A - 금속박막 증착전의 웨이퍼 세척방법 - Google Patents
금속박막 증착전의 웨이퍼 세척방법 Download PDFInfo
- Publication number
- KR910013469A KR910013469A KR1019890018824A KR890018824A KR910013469A KR 910013469 A KR910013469 A KR 910013469A KR 1019890018824 A KR1019890018824 A KR 1019890018824A KR 890018824 A KR890018824 A KR 890018824A KR 910013469 A KR910013469 A KR 910013469A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- thin film
- metal thin
- film deposition
- cleaning method
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims 2
- 239000002184 metal Substances 0.000 title claims 2
- 238000000034 method Methods 0.000 title claims 2
- 238000000427 thin-film deposition Methods 0.000 title 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims 4
- 239000008367 deionised water Substances 0.000 claims 2
- 229910021641 deionized water Inorganic materials 0.000 claims 2
- 239000010408 film Substances 0.000 claims 2
- 239000011259 mixed solution Substances 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000001914 filtration Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 참고도이다.
Claims (1)
- 황산과 과산화수소의 혼합용액에서 10분간 웨이퍼를 세척하고 탈이온수로 웨이퍼를 분사 세척한 후 1.0 미크론의 여과지가 부착된 순환·필터링 장치를 이용하여 플로라이드기 계통의 식각용액에서 웨이퍼 표면의 매몰 접촉창(1)에 형성된 자연 산화막(2)을 식각하고 탈 이온수로 웨이퍼를 분사세척한 후 황산과 과산화수소의 혼합 용액에서 2분간 재 세척을 실시하므로 절연산화막(3)의 표면과 매몰 접촉창(1) 표면에 흡착된 이물질을 제거함을 특징으로 하는 금속박막 증착전의 웨이퍼 세척방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890018824A KR0156100B1 (ko) | 1989-12-18 | 1989-12-18 | 금속박막 증착전의 웨이퍼 세척방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890018824A KR0156100B1 (ko) | 1989-12-18 | 1989-12-18 | 금속박막 증착전의 웨이퍼 세척방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR910013469A true KR910013469A (ko) | 1991-08-08 |
| KR0156100B1 KR0156100B1 (ko) | 1998-12-01 |
Family
ID=19293091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019890018824A KR0156100B1 (ko) | 1989-12-18 | 1989-12-18 | 금속박막 증착전의 웨이퍼 세척방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0156100B1 (ko) |
-
1989
- 1989-12-18 KR KR1019890018824A patent/KR0156100B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR0156100B1 (ko) | 1998-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR960026336A (ko) | 소수성 실리콘 웨이퍼의 세정방법 | |
| KR880014662A (ko) | 반도체 소자 제조방법 | |
| KR910013469A (ko) | 금속박막 증착전의 웨이퍼 세척방법 | |
| KR950027976A (ko) | 반도체 소자의 트렌치 세정 방법 | |
| KR970008397A (ko) | 식각용액 및 이를 이용한 반도체 장치의 식각방법 | |
| JPS56125844A (en) | Manufacture of semiconductor element | |
| Frankl | Effects of Copper on Fast Surface States of Etched Germanium | |
| KR970010936A (ko) | 반도체 장치의 세정에 사용되는 세정액 및 이를 이용한 세정방법 | |
| KR970030425A (ko) | 반도체 소자의 클리닝 방법 | |
| ATE215626T1 (de) | Verfahren zur herstellung eines filters | |
| KR970003582A (ko) | 반도체 웨이퍼 세정방법 | |
| JPS5443469A (en) | Manufacture of semiconductor device | |
| KR960019560A (ko) | 폴리실리콘막 세정 방법 | |
| KR930022478A (ko) | 반도체장치의 표면처리방법 | |
| KR940016535A (ko) | 과산화수소를 이용한 웨트에칭후 처리방법 | |
| KR960012345A (ko) | 실리콘웨이퍼의 세정방법 | |
| KR960019559A (ko) | 디글레이즈 세정 방법 | |
| KR930002542A (ko) | 금속선 에칭후의 이물질 제거방법 | |
| JPS6074533A (ja) | 素子の製造方法 | |
| KR910008789A (ko) | 금속층위의 감광제 제거방법 | |
| KR940015683A (ko) | 금속패턴 형성방법 | |
| KR920005294A (ko) | 건식에치후의 데미지 제거방법 | |
| KR960019538A (ko) | 두께를 초과하여 형성된 층의 식각방법 | |
| KR960019553A (ko) | 웨이퍼 세정 방법 | |
| KR980005901A (ko) | 반도체 장치의 폴리실리콘막 세정방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20060619 Year of fee payment: 9 |
|
| LAPS | Lapse due to unpaid annual fee |