KR910011098A - 폴리이미드 기판에 관통구를 형성하는 방법 - Google Patents

폴리이미드 기판에 관통구를 형성하는 방법 Download PDF

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Publication number
KR910011098A
KR910011098A KR1019900019368A KR900019368A KR910011098A KR 910011098 A KR910011098 A KR 910011098A KR 1019900019368 A KR1019900019368 A KR 1019900019368A KR 900019368 A KR900019368 A KR 900019368A KR 910011098 A KR910011098 A KR 910011098A
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South Korea
Prior art keywords
polyimide
polyimide substrate
carbon dioxide
dioxide laser
substrate
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KR1019900019368A
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English (en)
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KR930004135B1 (ko
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데이비드 랑제르 토마스
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원본미기재
이. 아이. 듀우판 드 네모아 앤드 캄파니
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Publication of KR910011098A publication Critical patent/KR910011098A/ko
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Publication of KR930004135B1 publication Critical patent/KR930004135B1/ko

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/12—Copper or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B23K2103/166—Multilayered materials
    • B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/30—Organic material
    • B23K2103/42—Plastics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/032—Organic insulating material consisting of one material
    • H05K1/0346—Organic insulating material consisting of one material containing N
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0154—Polyimide
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0548—Masks
    • H05K2203/0554—Metal used as mask for etching vias, e.g. by laser ablation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/08—Treatments involving gases
    • H05K2203/081—Blowing of gas, e.g. for cooling or for providing heat during solder reflowing
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/002—Etching of the substrate by chemical or physical means by liquid chemical etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0055—After-treatment, e.g. cleaning or desmearing of holes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/425—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
    • H05K3/427—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern initial plating of through-holes in metal-clad substrates

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Abstract

내용 없음.

Description

폴리이미드 기판에 관통구를 형성하는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (2)

  1. 폴리이미드 기판에 전기 도전성 벽부를 갖는 구멍이 이 기판의 반대 측면에 있는 전기 도전성 표면부와 접속하는 1개 이상의 관통구를 형성하는 방법에 있어서, 이 방법이 이산화탄소 레이저를 사용하여 폴리이미드를 제거함으로써 폴리이미드 기판에 1개 이상의 구멍을 형성하는 일차 단계에 의하고, 그 일차 단계는 (a) 이산화탄소 레이저가 평방 인치 당 18,000 내지 45,000 와트 범위의 평균 에너지 밀도로 사용되며, (b) 주로 산소 함유 분위기가 존재하고, (c) 제거되는 폴리이미드 부위에서 이산화탄소 레이저 비임의 집점이 이탈되며, (d) 반사면 위로 구멍 형성이 완결되기 전에 이산화탄소 레이저 비이의 일부를 폴리이미드 기판을 통해 통과시켜서 반사면에 충돌하는 70% 이상의 비임을 폴리이미드 기판으로 편향시켜 구멍 형성을 촉진시키고, 그리고 (e) 적어도 일부분의 구멍이 형성되는 동안 레이저 전원 공급기와 폴리이미드 기판간에 상대 운동이 존재하는 것으로 이루어지는 것을 특징으로 하는 방법.
  2. 제1항에 있어서, 또한 (f) 폴리이미드 기판의 화학적 식각 처리로 폴리이미드 찌끼를 제거하는 단계가 추가되는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900019368A 1989-11-29 1990-11-28 폴리이미드 기판에 관통구를 형성하는 방법 KR930004135B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US443301 1989-11-29
US07/443,301 US4959119A (en) 1989-11-29 1989-11-29 Method for forming through holes in a polyimide substrate

Publications (2)

Publication Number Publication Date
KR910011098A true KR910011098A (ko) 1991-06-29
KR930004135B1 KR930004135B1 (ko) 1993-05-20

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ID=23760259

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KR1019900019368A KR930004135B1 (ko) 1989-11-29 1990-11-28 폴리이미드 기판에 관통구를 형성하는 방법

Country Status (6)

Country Link
US (1) US4959119A (ko)
EP (1) EP0430116B1 (ko)
JP (1) JPH03210984A (ko)
KR (1) KR930004135B1 (ko)
CA (1) CA2030763A1 (ko)
DE (1) DE69012517T2 (ko)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5744776A (en) * 1989-07-14 1998-04-28 Tip Engineering Group, Inc. Apparatus and for laser preweakening an automotive trim cover for an air bag deployment opening
US5293025A (en) * 1991-08-01 1994-03-08 E. I. Du Pont De Nemours And Company Method for forming vias in multilayer circuits
US5608602A (en) * 1992-04-07 1997-03-04 Rohm Co., Ltd. Circuit incorporating a solid electrolytic capacitor
US5584956A (en) * 1992-12-09 1996-12-17 University Of Iowa Research Foundation Method for producing conductive or insulating feedthroughs in a substrate
US5871868A (en) * 1993-02-26 1999-02-16 General Dynamics Information Systems, Inc. Apparatus and method for machining conductive structures on substrates
GB2276354B (en) * 1993-03-22 1996-01-03 Klippan Autoliv Snc Improvements in or relating to a cover for an air-bag
US5485935A (en) * 1994-04-01 1996-01-23 Xerox Corporation Capture system employing diverter fluid nozzle
US5536579A (en) * 1994-06-02 1996-07-16 International Business Machines Corporation Design of high density structures with laser etch stop
US5840402A (en) * 1994-06-24 1998-11-24 Sheldahl, Inc. Metallized laminate material having ordered distribution of conductive through holes
US5567329A (en) * 1995-01-27 1996-10-22 Martin Marietta Corporation Method and system for fabricating a multilayer laminate for a printed wiring board, and a printed wiring board formed thereby
US5811019A (en) * 1995-03-31 1998-09-22 Sony Corporation Method for forming a hole and method for forming nozzle in orifice plate of printing head
JP3112059B2 (ja) 1995-07-05 2000-11-27 株式会社日立製作所 薄膜多層配線基板及びその製法
US6373026B1 (en) * 1996-07-31 2002-04-16 Mitsubishi Denki Kabushiki Kaisha Laser beam machining method for wiring board, laser beam machining apparatus for wiring board, and carbonic acid gas laser oscillator for machining wiring board
TW432124B (en) * 1996-05-13 2001-05-01 Mitsui Mining & Amp Smelting C Electrolytic copper foil with high post heat tensile strength and its manufacturing method
AU5084998A (en) * 1996-11-08 1998-05-29 W.L. Gore & Associates, Inc. Method for using photoabsorptive coatings to enhance both blind and through micro-via entrance quality
US5965043A (en) * 1996-11-08 1999-10-12 W. L. Gore & Associates, Inc. Method for using ultrasonic treatment in combination with UV-lasers to enable plating of high aspect ratio micro-vias
US5910255A (en) * 1996-11-08 1999-06-08 W. L. Gore & Associates, Inc. Method of sequential laser processing to efficiently manufacture modules requiring large volumetric density material removal for micro-via formation
US6023041A (en) * 1996-11-08 2000-02-08 W.L. Gore & Associates, Inc. Method for using photoabsorptive coatings and consumable copper to control exit via redeposit as well as diameter variance
US5879787A (en) * 1996-11-08 1999-03-09 W. L. Gore & Associates, Inc. Method and apparatus for improving wireability in chip modules
US5863446A (en) * 1996-11-08 1999-01-26 W. L. Gore & Associates, Inc. Electrical means for extracting layer to layer registration
US5868950A (en) * 1996-11-08 1999-02-09 W. L. Gore & Associates, Inc. Method to correct astigmatism of fourth yag to enable formation of sub 25 micron micro-vias using masking techniques
AU4902897A (en) 1996-11-08 1998-05-29 W.L. Gore & Associates, Inc. Method for improving reliability of thin circuit substrates by increasing the T of the substrate
JP4234205B2 (ja) * 1996-11-08 2009-03-04 ダブリュ．エル．ゴア アンド アソシエイツ，インコーポレイティド 電子アセンブリおよび電子物品内でのヴァイアのインダクタンスを低減する方法
AU4993797A (en) * 1996-11-08 1998-05-29 W.L. Gore & Associates, Inc. Method for using fiducial schemes to increase nominal registration
US5841102A (en) * 1996-11-08 1998-11-24 W. L. Gore & Associates, Inc. Multiple pulse space processing to enhance via entrance formation at 355 nm
US6103992A (en) 1996-11-08 2000-08-15 W. L. Gore & Associates, Inc. Multiple frequency processing to minimize manufacturing variability of high aspect ratio micro through-vias
US5973290A (en) * 1997-02-26 1999-10-26 W. L. Gore & Associates, Inc. Laser apparatus having improved via processing rate
US6203652B1 (en) 1999-06-30 2001-03-20 International Business Machines Corporation Method of forming a via in a substrate
JP4348785B2 (ja) * 1999-07-29 2009-10-21 三菱瓦斯化学株式会社 高弾性率ガラス布基材熱硬化性樹脂銅張積層板
ATE345875T1 (de) * 1999-09-15 2006-12-15 Aradigm Corp Porenstrukturen zur niederdruckaerosolisierung
US6420675B1 (en) 1999-10-08 2002-07-16 Nanovia, Lp Control system for ablating high-density array of vias or indentation in surface of object
US6256121B1 (en) 1999-10-08 2001-07-03 Nanovia, Lp Apparatus for ablating high-density array of vias or indentation in surface of object
US6310701B1 (en) 1999-10-08 2001-10-30 Nanovia Lp Method and apparatus for ablating high-density array of vias or indentation in surface of object
US7111423B2 (en) * 1999-10-08 2006-09-26 Identification Dynamics, Llc Method and apparatus for reading firearm microstamping
US6653593B2 (en) 1999-10-08 2003-11-25 Nanovia, Lp Control system for ablating high-density array of vias or indentation in surface of object
US6886284B2 (en) * 1999-10-08 2005-05-03 Identification Dynamics, Llc Firearm microstamping and micromarking insert for stamping a firearm identification code and serial number into cartridge shell casings and projectiles
US6833911B2 (en) 1999-10-08 2004-12-21 Identification Dynamics, Inc. Method and apparatus for reading firearm microstamping
JP3399434B2 (ja) * 2001-03-02 2003-04-21 オムロン株式会社 高分子成形材のメッキ形成方法と回路形成部品とこの回路形成部品の製造方法
SE521028C2 (sv) * 2001-05-14 2003-09-23 Metfoils Ab Förfarande för laserborrning i material använda vid framställning av tryckta kretsar
GB2377664A (en) * 2001-06-22 2003-01-22 Nippei Toyama Corp Laser beam machining apparatus and laser beam machining method
DE10145184B4 (de) * 2001-09-13 2005-03-10 Siemens Ag Verfahren zum Laserbohren, insbesondere unter Verwendung einer Lochmaske
DE10207288B4 (de) * 2002-02-21 2005-05-04 Newson Engineering Nv Verfahren zum Bohren von Löchern mittels eines Laserstrahls in einem Substrat, insbesondere in einem elektrischen Schaltungsubstrat
JP2003249743A (ja) * 2002-02-26 2003-09-05 Seiko Epson Corp 配線基板及びその製造方法、半導体装置並びに電子機器
ATE338878T1 (de) * 2002-07-19 2006-09-15 Schlumberger Services Petrol Rohr mit gewindeorientierungsmarkierungen
US7204419B2 (en) * 2003-05-01 2007-04-17 Identifcation Dynamics, Llc Method and apparatus for reading firearm microstamping
EP1462206A1 (fr) * 2003-03-26 2004-09-29 Lasag Ag dispositif laser pour percer des trous dans des composants d'un dispositif d'injection d'un fluide
US20050241203A1 (en) * 2003-05-01 2005-11-03 Lizotte Todd E Method and apparatus for cartridge identification imprinting in difficult contexts by recess protected indicia
US7014727B2 (en) * 2003-07-07 2006-03-21 Potomac Photonics, Inc. Method of forming high resolution electronic circuits on a substrate
US20050219327A1 (en) * 2004-03-31 2005-10-06 Clarke Leo C Features in substrates and methods of forming
US7658470B1 (en) 2005-04-28 2010-02-09 Hewlett-Packard Development Company, L.P. Method of using a flexible circuit
CN100471362C (zh) * 2005-09-21 2009-03-18 富葵精密组件(深圳)有限公司 柔性电路板的制作方法
KR100797692B1 (ko) * 2006-06-20 2008-01-23 삼성전기주식회사 인쇄회로기판 및 그 제조방법
DE102008058535A1 (de) * 2008-11-21 2010-05-27 Tesa Se Verfahren zur Materialbearbeitung mit energiereicher Strahlung
US9434025B2 (en) * 2011-07-19 2016-09-06 Pratt & Whitney Canada Corp. Laser drilling methods of shallow-angled holes
EP2807682A1 (en) 2012-01-25 2014-12-03 Alphabet Energy, Inc. Modular thermoelectric units for heat recovery systems and methods thereof
US9257627B2 (en) 2012-07-23 2016-02-09 Alphabet Energy, Inc. Method and structure for thermoelectric unicouple assembly
US9065017B2 (en) 2013-09-01 2015-06-23 Alphabet Energy, Inc. Thermoelectric devices having reduced thermal stress and contact resistance, and methods of forming and using the same
WO2015157161A1 (en) * 2014-04-07 2015-10-15 Alphabet Energy, Inc. Flexible lead frame for multi-leg package assembly
DE102014110262A1 (de) 2014-07-22 2016-01-28 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Verfahren zur Herstellung eines Rückseitenkontaktsystems für eine Silizium-Dünnschicht-Solarzelle
US11482884B2 (en) * 2020-12-28 2022-10-25 Nucurrent, Inc. Systems and methods for utilizing laser cutting and chemical etching in manufacturing wireless power antennas
US11538629B2 (en) 2020-12-28 2022-12-27 Nucurrent, Inc. Systems and methods for utilizing laser cutting and chemical etching in manufacturing wireless power antennas

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4258468A (en) * 1978-12-14 1981-03-31 Western Electric Company, Inc. Forming vias through multilayer circuit boards
US4426253A (en) * 1981-12-03 1984-01-17 E. I. Du Pont De Nemours & Co. High speed etching of polyimide film
US4472238A (en) * 1983-12-05 1984-09-18 E. I. Du Pont De Nemours And Company Process using plasma for forming conductive through-holes through a dielectric layer
JPS60133992A (ja) * 1983-12-21 1985-07-17 Canon Inc プリント基板の穴明け加工装置
US4635358A (en) * 1985-01-03 1987-01-13 E. I. Du Pont De Nemours And Company Method for forming electrically conductive paths through a dielectric layer
JPS61176193A (ja) * 1985-01-31 1986-08-07 日立化成工業株式会社 配線板の製造法
JPS61176186A (ja) * 1985-01-31 1986-08-07 日立化成工業株式会社 配線板の製造法
US4642160A (en) * 1985-08-12 1987-02-10 Interconnect Technology Inc. Multilayer circuit board manufacturing
US4714516A (en) * 1986-09-26 1987-12-22 General Electric Company Method to produce via holes in polymer dielectrics for multiple electronic circuit chip packaging
US4894115A (en) * 1989-02-14 1990-01-16 General Electric Company Laser beam scanning method for forming via holes in polymer materials

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EP0430116A2 (en) 1991-06-05
CA2030763A1 (en) 1991-05-30
KR930004135B1 (ko) 1993-05-20
JPH03210984A (ja) 1991-09-13
EP0430116A3 (en) 1992-01-29
US4959119A (en) 1990-09-25
DE69012517T2 (de) 1995-03-09
EP0430116B1 (en) 1994-09-14
DE69012517D1 (de) 1994-10-20

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