KR910010872A - 전자비교기회로 - Google Patents

전자비교기회로 Download PDF

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Publication number
KR910010872A
KR910010872A KR1019900018851A KR900018851A KR910010872A KR 910010872 A KR910010872 A KR 910010872A KR 1019900018851 A KR1019900018851 A KR 1019900018851A KR 900018851 A KR900018851 A KR 900018851A KR 910010872 A KR910010872 A KR 910010872A
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KR
South Korea
Prior art keywords
pair
mos transistors
circuit
input
electronic comparator
Prior art date
Application number
KR1019900018851A
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English (en)
Other versions
KR0159092B1 (ko
Inventor
골라 알베르토
알자티 안젤로
노벨리 알도
Original Assignee
원본미기재
에스지에스-톰슨 마이크로일렉트로닉스 에스.알.엘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 원본미기재, 에스지에스-톰슨 마이크로일렉트로닉스 에스.알.엘 filed Critical 원본미기재
Publication of KR910010872A publication Critical patent/KR910010872A/ko
Application granted granted Critical
Publication of KR0159092B1 publication Critical patent/KR0159092B1/ko

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/4508—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using bipolar transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45278—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using BiFET transistors as the active amplifying circuit
    • H03F3/45282—Long tailed pairs
    • H03F3/45286—Non-folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45278—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using BiFET transistors as the active amplifying circuit
    • H03F3/45282—Long tailed pairs
    • H03F3/45291—Folded cascode stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/45—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of non-linear magnetic or dielectric devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2436—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using a combination of bipolar and field-effect transistors
    • H03K5/2445—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using a combination of bipolar and field-effect transistors with at least one differential stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45028—Indexing scheme relating to differential amplifiers the differential amplifier amplifying transistors are folded cascode coupled transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45144—At least one follower being added at the input of a dif amp
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45188—Indexing scheme relating to differential amplifiers the differential amplifier contains one or more current sources in the load
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45304—Indexing scheme relating to differential amplifiers the common gate stage of a BIFET cascode dif amp being implemented fully by FETs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45612—Indexing scheme relating to differential amplifiers the IC comprising one or more input source followers as input stages in the IC

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Manipulation Of Pulses (AREA)
  • Electronic Switches (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)

Abstract

내용 없음

Description

전자비교기회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
첨부된 도면은 본 발명에 따른 전자비교기회로의 회로도면.

Claims (6)

  1. 한쌍의 차동 쌍극형 트랜지스터(T2,T33) 가 제공된 제1의 차동단계(2) 입력회로부를 포함하며 콜렉터(C2,C3)가 상기 입력부(2)의 각 출력을 구성시키는 타입의 전자비교기회로(1)에 있어서, 게이트전극(G1,G2)이 공통으로 한 측면에서 상기 출력(C2,C3)에 연결되고 다른 한 측면에서 전류거울회로(4)를 통해 양 전원공급전극(Vc)로 연결되는 한쌍의 제1 MOS트랜지스터(M1,M2), 게이트전극(G5,G6)이 공통으로 상기 출력(G2,G3)과 접지사이에 연결된 한쌍의 제2MOS트랜지스터(M5,M6)를 포함하며, 한쌍의 제1MOS트랜지스터 드레인 전극(D2)가 비교기(1)를 위한 한 출력단자(OUT)를 형성시킴을 특징으로 하는 전자비교기 회로.
  2. 제1항에 있어서, 상기 제1쌍의 MOS트랜지스터(M1,M2)가 상기 출력(C2,C3)으로부터 하류로 직렬구성으로 연결됨을 특징으로 하는 전자비교기회로.
  3. 제1항에 있어서, 상기 출력단계(3)가 상기 제1쌍의 MOS트랜지스터(M1,M2)의 게이트(G1,G2)와 사이에서 저항기(R)를 경유하여 다이오드 구성으로 연결된 MOS트랜지스터(M7)를 더욱더 포함하며, 게이트전극(G7)이 제2쌍의 MOS트랜지스터(M5,M6)게이트(G5,G6)에 직접 연결됨을 특징으로 하는 전자비교기회로.
  4. 제1항에 있어서, 거울전류회로(4)가 또다른 한쌍의 MOS트랜지스터(M3,M4)를 포함하며, 그중 하나(M3)가 다이오드 구성으로 되어 있고, 양 공급전압전극(Vc)와 상기 제1쌍의 MOS트랜지스터(M1,M2)드레인전극(D1,D2)사이에 삽입됨을 특징으로 하는 전자비교기회로.
  5. 제1항에 있어서, 상기 제1입력회로부분(2)이 한 신호입력(IN)과 한계입력(S)을 가지며 각각의 상응하는 쌍극형 트랜지스터(T1,T4)에 연결되고 이는 다시 접지와 차동단계(2)사이에서 에미터-홀루우어 구성으로 연결됨을 특징으로 하는 전자비교기 회로.
  6. 제1항에 있어서, 상기 극(Vc)과 제1쌍의 MOS트랜지스터(M1,M2)게이트(G1,G2)사이에 한 바이어스 전류전원(I4)을 포함함을 특징으로하는 전자비교기회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900018851A 1989-11-22 1990-11-21 전자비교기회로 KR0159092B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IT02247489A IT1236879B (it) 1989-11-22 1989-11-22 Circuito elettronico comparatore
IT22474A/89 1989-11-22
IT22474-A/89 1989-11-22

Publications (2)

Publication Number Publication Date
KR910010872A true KR910010872A (ko) 1991-06-29
KR0159092B1 KR0159092B1 (ko) 1999-03-20

Family

ID=11196766

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900018851A KR0159092B1 (ko) 1989-11-22 1990-11-21 전자비교기회로

Country Status (6)

Country Link
US (2) US5077489A (ko)
EP (1) EP0429829B1 (ko)
JP (1) JP3105535B2 (ko)
KR (1) KR0159092B1 (ko)
DE (1) DE69030427T2 (ko)
IT (1) IT1236879B (ko)

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US5525934A (en) * 1994-08-24 1996-06-11 National Semiconductor Corporation Output circuit with short circuit protection for a CMOS comparator
US5668551A (en) * 1995-01-18 1997-09-16 Analog Devices, Inc. Power-up calibration of charge redistribution analog-to-digital converter
US5621409A (en) * 1995-02-15 1997-04-15 Analog Devices, Inc. Analog-to-digital conversion with multiple charge balance conversions
US5990709A (en) * 1995-06-09 1999-11-23 Siemens Aktiengesellschaft Circuit for comparing two electrical quantities provided by a first neuron MOS field effect transistor and a reference source
US5621340A (en) * 1995-08-02 1997-04-15 Rambus Inc. Differential comparator for amplifying small swing signals to a full swing output
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US6259280B1 (en) * 1997-09-25 2001-07-10 Texas Instruments Incorporated Class AB amplifier for use in semiconductor memory devices
JPH11154835A (ja) * 1997-11-21 1999-06-08 Seiko Instruments Inc 差動増幅器
US6362467B1 (en) 1999-10-21 2002-03-26 Infineon Technologies North America Corp. Fast-switching comparator with hysteresis
US6313667B1 (en) * 2000-11-01 2001-11-06 National Semiconductor Corporation Apparatus and method for a turn around stage having reduced power consumption, Class AB behavior, low noise and low offset
DE10157962C1 (de) * 2001-11-26 2003-07-03 Texas Instruments Deutschland Komparator
US7986189B1 (en) * 2010-04-29 2011-07-26 Freescale Semiconductor, Inc. Amplifier with feedback
KR200487144Y1 (ko) 2017-09-28 2018-09-10 이승준 소방 배관 연결구조

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Also Published As

Publication number Publication date
IT8922474A0 (it) 1989-11-22
US5077489A (en) 1991-12-31
EP0429829A3 (en) 1992-05-06
JP3105535B2 (ja) 2000-11-06
DE69030427T2 (de) 1997-10-16
EP0429829B1 (en) 1997-04-09
EP0429829A2 (en) 1991-06-05
JPH03226003A (ja) 1991-10-07
IT1236879B (it) 1993-04-26
USRE35434E (en) 1997-01-28
KR0159092B1 (ko) 1999-03-20
DE69030427D1 (de) 1997-05-15
IT8922474A1 (it) 1991-05-22

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