KR910010219B1 - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

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Publication number
KR910010219B1
KR910010219B1 KR1019880011034A KR880011034A KR910010219B1 KR 910010219 B1 KR910010219 B1 KR 910010219B1 KR 1019880011034 A KR1019880011034 A KR 1019880011034A KR 880011034 A KR880011034 A KR 880011034A KR 910010219 B1 KR910010219 B1 KR 910010219B1
Authority
KR
South Korea
Prior art keywords
wiring
semiconductor device
area
manufacturing
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019880011034A
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English (en)
Korean (ko)
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KR890004394A (ko
Inventor
다츠야 히로사와
Original Assignee
가부시키가이샤 도시바
아오이 죠이치
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바, 아오이 죠이치 filed Critical 가부시키가이샤 도시바
Publication of KR890004394A publication Critical patent/KR890004394A/ko
Application granted granted Critical
Publication of KR910010219B1 publication Critical patent/KR910010219B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Drying Of Semiconductors (AREA)
KR1019880011034A 1987-08-31 1988-08-30 반도체장치의 제조방법 Expired KR910010219B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21666787A JPS6459832A (en) 1987-08-31 1987-08-31 Manufacture of semiconductor device
JP62-216667 1987-08-31

Publications (2)

Publication Number Publication Date
KR890004394A KR890004394A (ko) 1989-04-21
KR910010219B1 true KR910010219B1 (ko) 1991-12-21

Family

ID=16692039

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880011034A Expired KR910010219B1 (ko) 1987-08-31 1988-08-30 반도체장치의 제조방법

Country Status (2)

Country Link
JP (1) JPS6459832A (enrdf_load_stackoverflow)
KR (1) KR910010219B1 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3179520B2 (ja) * 1991-07-11 2001-06-25 株式会社日立製作所 半導体装置の製造方法
JP2742863B2 (ja) * 1993-06-28 1998-04-22 セイコーエプソン株式会社 フレキシブル回路基板の製造方法及びマスク
KR100191126B1 (ko) 1995-11-28 1999-06-15 윤덕용 비닐4-t-부톡시카르보닐옥시벤잘-비닐 알코올-비닐 아세테이트 공중합체와 비닐 4-t-부톡시카르보닐옥시벤잘-비닐 4-히드록시벤잘-비닐 알코올-비닐 아세테이트 공중합체 및 그들의 제조방법
JP3085259B2 (ja) * 1997-09-17 2000-09-04 日本電気株式会社 露光パターン及びその発生方法
EP1043626A1 (en) * 1999-04-06 2000-10-11 STMicroelectronics S.r.l. A method for improving the performance of photolithographic equipment and for increasing the lifetime of the optics thereof
TWI845296B (zh) * 2023-05-04 2024-06-11 頎邦科技股份有限公司 軟性電路板之佈線結構

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62281328A (ja) * 1986-05-30 1987-12-07 Nec Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
KR890004394A (ko) 1989-04-21
JPS6459832A (en) 1989-03-07
JPH0583176B2 (enrdf_load_stackoverflow) 1993-11-25

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