KR910007947B1 - 스퍼터링 타겟 - Google Patents

스퍼터링 타겟 Download PDF

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Publication number
KR910007947B1
KR910007947B1 KR1019880002359A KR880002359A KR910007947B1 KR 910007947 B1 KR910007947 B1 KR 910007947B1 KR 1019880002359 A KR1019880002359 A KR 1019880002359A KR 880002359 A KR880002359 A KR 880002359A KR 910007947 B1 KR910007947 B1 KR 910007947B1
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KR
South Korea
Prior art keywords
thin film
target
crystal grains
blocks
block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019880002359A
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English (en)
Korean (ko)
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KR880011363A (ko
Inventor
요시하루 후카사와
미쯔오 가와이
히데오 이시하라
다카시 야마노베
Original Assignee
가부시끼가이샤 도시바
아오이 죠이찌
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Publication date
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=12845019&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR910007947(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 가부시끼가이샤 도시바, 아오이 죠이찌 filed Critical 가부시끼가이샤 도시바
Publication of KR880011363A publication Critical patent/KR880011363A/ko
Application granted granted Critical
Publication of KR910007947B1 publication Critical patent/KR910007947B1/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1019880002359A 1987-03-06 1988-03-05 스퍼터링 타겟 Expired KR910007947B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62049940A JPS63216966A (ja) 1987-03-06 1987-03-06 スパツタタ−ゲツト
JP?62-49940 1987-03-06
JP62-49940 1987-03-06

Publications (2)

Publication Number Publication Date
KR880011363A KR880011363A (ko) 1988-10-28
KR910007947B1 true KR910007947B1 (ko) 1991-10-04

Family

ID=12845019

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880002359A Expired KR910007947B1 (ko) 1987-03-06 1988-03-05 스퍼터링 타겟

Country Status (5)

Country Link
US (1) US4842706A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0281141B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS63216966A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR910007947B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3854609T3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2757287B2 (ja) * 1989-11-02 1998-05-25 日立金属株式会社 タングステンターゲットの製造方法
US5087297A (en) * 1991-01-17 1992-02-11 Johnson Matthey Inc. Aluminum target for magnetron sputtering and method of making same
JPH06143581A (ja) * 1992-11-05 1994-05-24 Xerox Corp インクジェット印字ヘッド
US5466355A (en) * 1993-07-15 1995-11-14 Japan Energy Corporation Mosaic target
JP2898515B2 (ja) * 1993-07-15 1999-06-02 株式会社ジャパンエナジー モザイクターゲット
US5772860A (en) * 1993-09-27 1998-06-30 Japan Energy Corporation High purity titanium sputtering targets
US5590389A (en) * 1994-12-23 1996-12-31 Johnson Matthey Electronics, Inc. Sputtering target with ultra-fine, oriented grains and method of making same
US6569270B2 (en) * 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
JPH1180942A (ja) * 1997-09-10 1999-03-26 Japan Energy Corp Ｔａスパッタターゲットとその製造方法及び組立体
JP2924891B1 (ja) * 1998-05-15 1999-07-26 日本電気株式会社 スパッタリング装置
US6348139B1 (en) 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
JP2000104164A (ja) * 1998-06-29 2000-04-11 Toshiba Corp スパッタタ―ゲット
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
US20040072009A1 (en) * 1999-12-16 2004-04-15 Segal Vladimir M. Copper sputtering targets and methods of forming copper sputtering targets
US6878250B1 (en) 1999-12-16 2005-04-12 Honeywell International Inc. Sputtering targets formed from cast materials
US6780794B2 (en) * 2000-01-20 2004-08-24 Honeywell International Inc. Methods of bonding physical vapor deposition target materials to backing plate materials
US7517417B2 (en) * 2000-02-02 2009-04-14 Honeywell International Inc. Tantalum PVD component producing methods
US6331233B1 (en) 2000-02-02 2001-12-18 Honeywell International Inc. Tantalum sputtering target with fine grains and uniform texture and method of manufacture
US6698647B1 (en) 2000-03-10 2004-03-02 Honeywell International Inc. Aluminum-comprising target/backing plate structures
US6514358B1 (en) * 2000-04-05 2003-02-04 Heraeus, Inc. Stretching of magnetic materials to increase pass-through-flux (PTF)
US6585870B1 (en) * 2000-04-28 2003-07-01 Honeywell International Inc. Physical vapor deposition targets having crystallographic orientations
JP5341292B2 (ja) * 2000-05-22 2013-11-13 キャボット コーポレイション ニオブスパッタ要素、ニオブ金属およびそれを含む物品
CN100369141C (zh) * 2002-02-25 2008-02-13 日矿金属株式会社 相变型存储器用溅射靶及其制造方法
CN1238554C (zh) * 2002-06-24 2006-01-25 株式会社钢臂功科研 银合金溅射靶及其制造方法
DE10392142B4 (de) * 2003-06-23 2007-08-02 Kobelco Research Institute, Inc., Kobe Sputtertarget aus einer Silberlegierung und Verfahren zur Herstellung desselben
US20070007505A1 (en) * 2005-07-07 2007-01-11 Honeywell International Inc. Chalcogenide PVD components
US20070084527A1 (en) * 2005-10-19 2007-04-19 Stephane Ferrasse High-strength mechanical and structural components, and methods of making high-strength components
CN101374611B (zh) 2006-03-07 2015-04-08 卡伯特公司 制备变形金属制品的方法
US20070251818A1 (en) * 2006-05-01 2007-11-01 Wuwen Yi Copper physical vapor deposition targets and methods of making copper physical vapor deposition targets
JP5731770B2 (ja) * 2010-08-23 2015-06-10 株式会社東芝 スパッタリングターゲットの製造方法及びスパッタリングターゲット
JP6438906B2 (ja) * 2016-04-11 2018-12-19 ミネベアミツミ株式会社 角度調整装置及び照明装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145982A (en) * 1981-03-03 1982-09-09 Toshiba Corp Target for sputtering device
JPS59179783A (ja) * 1983-03-31 1984-10-12 Toshiba Corp スパツタリングタ−ゲツト
JPS59200761A (ja) * 1983-04-28 1984-11-14 Toshiba Corp スパツタリングタ−ゲツト支持装置
JPS59208073A (ja) * 1983-05-13 1984-11-26 Fujitsu Ltd スパツタリング用シリサイドタ−ゲツト
JPH0611029B2 (ja) * 1984-03-28 1994-02-09 株式会社日立製作所 スパツタタ−ゲツトおよびスパツタリング方法
JPS61116835A (ja) * 1984-11-13 1986-06-04 Shinku Yakin Kk Ｌｓｉ又は超ｌｓｉ電極配線材料用スパツタリングタ−ゲツト
JPH0796701B2 (ja) * 1984-12-12 1995-10-18 日立金属株式会社 スパッタ用ターゲットとその製造方法
JPS61145829A (ja) * 1984-12-20 1986-07-03 Nippon Mining Co Ltd モザイク状スパツタリングタ−ゲツトとその製造方法
JPS61145828A (ja) * 1984-12-20 1986-07-03 Nippon Mining Co Ltd スパツタリングタ−ゲツトとその製造方法
JPS61272371A (ja) * 1985-05-29 1986-12-02 O C C:Kk スパツタリングタ−ゲツト
JPH06104894B2 (ja) * 1985-10-16 1994-12-21 日立金属株式会社 スパッター用ターゲット部材およびその製造方法
JPH06104893B2 (ja) * 1985-10-16 1994-12-21 日立金属株式会社 スパッター用ターゲット部材およびその製造方法
JPH06104895B2 (ja) * 1986-02-12 1994-12-21 日立金属株式会社 タ−ゲツト部材
JPS63111172A (ja) * 1986-10-29 1988-05-16 Hitachi Metals Ltd タ−ゲツト材の製造方法
JPS63145771A (ja) * 1986-12-10 1988-06-17 Kasei Naoetsu:Kk スパツタリングタ−ゲツト

Also Published As

Publication number Publication date
EP0281141B2 (en) 2000-06-28
DE3854609T2 (de) 1996-04-25
DE3854609D1 (de) 1995-11-30
KR880011363A (ko) 1988-10-28
US4842706A (en) 1989-06-27
JPS63216966A (ja) 1988-09-09
JPH0371510B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-11-13
EP0281141A1 (en) 1988-09-07
DE3854609T3 (de) 2000-11-23
EP0281141B1 (en) 1995-10-25

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