KR910007073A - 퇴적막의 형성법 및 반도체장치의 제조법 - Google Patents

퇴적막의 형성법 및 반도체장치의 제조법 Download PDF

Info

Publication number
KR910007073A
KR910007073A KR1019900015299A KR900015299A KR910007073A KR 910007073 A KR910007073 A KR 910007073A KR 1019900015299 A KR1019900015299 A KR 1019900015299A KR 900015299 A KR900015299 A KR 900015299A KR 910007073 A KR910007073 A KR 910007073A
Authority
KR
South Korea
Prior art keywords
organometallic compound
gas
donating surface
forming
temperature
Prior art date
Application number
KR1019900015299A
Other languages
English (en)
Other versions
KR940006665B1 (ko
Inventor
가즈아끼 오오미
오사무 이께다
시게유끼 마쓰모도
Original Assignee
야마지 게이조오
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1250018A external-priority patent/JPH03110840A/ja
Priority claimed from JP1250017A external-priority patent/JPH03111570A/ja
Application filed by 야마지 게이조오, 캐논 가부시끼가이샤 filed Critical 야마지 게이조오
Publication of KR910007073A publication Critical patent/KR910007073A/ko
Application granted granted Critical
Publication of KR940006665B1 publication Critical patent/KR940006665B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt

Abstract

내용 없음

Description

퇴적막의 형성법 및 반도체장치의 제조법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명이 적용 가능한 퇴적막 형성장치의 일예를 도시하는 모식도.

Claims (11)

  1. (a) 전자공여성 표면을 가지는 기체에, 몰리브덴 원자를 함유하는 유기금속화합물의 가스와 수소가스를 공급하는 공정과, (b) 상기 유기금속 화합물의 분해온도 이하이며 그리고 또 800℃이하의 온도 범위내에 상기 전자공여성 표면의 온도를 유지하고, 몰르비덴막을 그 전자공여성 표면에 형성하는 공정으로 이루어지는 것을 특징으로 하는 퇴적막 형성법.
  2. 제1항에 있어서, 상기 유기금속 화합물이 Mo(CO)6인 것을 특징으로 하는 퇴적막 형성법.
  3. 제1항에 있어서, 상기 유기금속 화합물이 Mo(CH)6인 것을 특징으로 하는 퇴적막 형성법.
  4. 제1항에 있어서, 상기 전자공여성 표면이 반도체로 된 것을 특징으로 하는 퇴적막 형성법.
  5. (a) 전자공여성 표면과 비전자공여성 표면을 가지는 기체에, 몰리브덴 원자를 함유하는 유기금속 화합물의 가스와 수소가스를 공급하는 공정과, (b) 상기 유기금속 화합물의 분해온도 이하에서 그리고 또 800℃ 이하의 범위내에 상기 전자공여성 표면의 온도를 유지하고, 몰리브덴막을 그 전자공여성 표면에 선택적으로 형성하는 공정으로 이루어지는 것을 특징으로 하는 퇴적막 형성법.
  6. 제5항에 있어서, 상기 유기금속 화합물이 Mo(CO)6인 것을 특징으로 하는 퇴적막 형성법.
  7. 제5항에 있어서, 상기 유기금속 화합물이 Mo(CH)6인 것을 특징으로 하는 퇴적막 형성법.
  8. 제5항에 있어서, 성막시에 있어서 상기 유기금속 화합물의 분압이 100Torr이하인 것을 특징으로 하는 퇴적막 형성법.
  9. 반도체 재료상에 절연체 재료로 된 막을 형성하는 공정, 상기 막에 구멍을 형성하고 상기 반도체 재료를 노출시키는 공정, 그리고, 상기 구멍에 도전성 재료를 심어넣고, 전기적 배선의 일부를 형성하는 공정으로 이루어지는 반도체장치의 제조법에 있어서, 몰리브덴 원자를 함유하는 유기금속 화합물의 가스와 수소가스를 그 유기금속 화합물의 분해온도 이하, 그리고 800℃이하의 온도에서 반응시켜 몰리브덴을 상기 구멍에 선택적으로 퇴적시켜, 상기 배선의 일부를 형성하는 것을 특징으로 하는 반도체 장치의 제조법.
  10. 제9항에 있어서, 상기 유기금속 화합물이 Mo(CO)6인 것을 특징으로 하는 반도체 장치의 제조법.
  11. 제9항에 있어서, 상기 유기금속 화합물이 Mo(CH)6인 것을 특징으로 하는 반도체 장치의 제조법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900015299A 1989-09-26 1990-09-26 퇴적막의 형성법 및 반도체장치의 제조법 KR940006665B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1-250018 1989-09-26
JP1250018A JPH03110840A (ja) 1989-09-26 1989-09-26 堆積膜形成法
JP1250017A JPH03111570A (ja) 1989-09-26 1989-09-26 堆積膜形成法
JP1-250017 1989-09-26

Publications (2)

Publication Number Publication Date
KR910007073A true KR910007073A (ko) 1991-04-30
KR940006665B1 KR940006665B1 (ko) 1994-07-25

Family

ID=26539605

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900015299A KR940006665B1 (ko) 1989-09-26 1990-09-26 퇴적막의 형성법 및 반도체장치의 제조법

Country Status (8)

Country Link
US (1) US6025243A (ko)
EP (1) EP0420589B1 (ko)
KR (1) KR940006665B1 (ko)
AT (1) ATE134070T1 (ko)
DE (1) DE69025252T2 (ko)
MY (1) MY110288A (ko)
PT (1) PT95436B (ko)
SG (1) SG59964A1 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW310461B (ko) * 1995-11-10 1997-07-11 Matsushita Electric Ind Co Ltd
JP2002334868A (ja) * 2001-05-10 2002-11-22 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
US6939801B2 (en) * 2001-12-21 2005-09-06 Applied Materials, Inc. Selective deposition of a barrier layer on a dielectric material
JP4592373B2 (ja) * 2004-09-30 2010-12-01 株式会社トリケミカル研究所 導電性モリブデンナイトライドゲート電極膜の形成方法
JP2019145589A (ja) * 2018-02-16 2019-08-29 東芝メモリ株式会社 半導体装置の製造方法
CN113166929A (zh) 2018-12-05 2021-07-23 朗姆研究公司 无空隙低应力填充

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE73869T1 (de) * 1985-05-10 1992-04-15 Gen Electric Verfahren und vorrichtung zum selektiven chemischen aufdampfen.
JPS62281349A (ja) * 1986-05-29 1987-12-07 Seiko Instr & Electronics Ltd 金属パタ−ン膜の形成方法及びその装置
JP2895166B2 (ja) * 1990-05-31 1999-05-24 キヤノン株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
KR940006665B1 (ko) 1994-07-25
MY110288A (en) 1998-04-30
ATE134070T1 (de) 1996-02-15
EP0420589A3 (en) 1991-08-21
EP0420589A2 (en) 1991-04-03
US6025243A (en) 2000-02-15
DE69025252D1 (de) 1996-03-21
PT95436A (pt) 1991-05-22
EP0420589B1 (en) 1996-02-07
DE69025252T2 (de) 1996-07-04
PT95436B (pt) 1997-07-31
SG59964A1 (en) 1999-02-22

Similar Documents

Publication Publication Date Title
US4957773A (en) Deposition of boron-containing films from decaborane
KR920001622A (ko) 얼라인먼트 마크를 가지는 반도체 장치의 제조방법
KR890700693A (ko) 클러스터 비임을 사용하는 에너지 인텐시브 표면 반응
KR860002249A (ko) 기판에 탄소 피복을 하는 글로우 방전 방법 및 피복
KR910007093A (ko) 알킬 알루미늄 하이드라이드의 사용에 의한 알루미늄을 주성분으로 함유하는 금속퇴적막의 형성법
KR950034588A (ko) 탄탈계 고유전체재료 및 고유전체막의 형성방법 및 반도체장치
JPH039615B2 (ko)
TW328147B (en) Semiconductor device fabrication
JPS5992905A (ja) 無機薄質の製法
KR950007021A (ko) 평탄화된 절연막을 갖는 반도체장치
GB2355992A (en) Method and apparatus for forming a film on a substrate
KR940006197A (ko) 반도체장치의 콘택부 형성방법
KR910007073A (ko) 퇴적막의 형성법 및 반도체장치의 제조법
KR910007111A (ko) 퇴적막의 형성법 및 반도체 장치의 제조법
TW367591B (en) Nanoporous dielectric films with graded density and process for making such films
SE8705079D0 (sv) Dopade polykristallina kiselskikt for halvledarorgan
KR960035784A (ko) 막형성용 재료 및 배선형성방법
US5595936A (en) Method for forming contacts in semiconductor device
TW289134B (en) Method of forming interconnection insulator
JPS57149776A (en) Formation of high-melting point metal and silicon compound thin film
KR970023664A (ko) 반도체장치의 도전층 형성방법
KR910010625A (ko) 반도체 장치의 제조방법
TW375777B (en) Etching process
FR2592524A1 (fr) Procede de production d'un dispositif electronique a structure multicouche et dispositif electronique ainsi obtenu
KR950020987A (ko) 에피택셜층의 형성방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20060711

Year of fee payment: 13

LAPS Lapse due to unpaid annual fee