KR900700184A - 균일하고 미세한 붕소-함유 세라믹 분말을 제조하는 장치 및 방법 - Google Patents

균일하고 미세한 붕소-함유 세라믹 분말을 제조하는 장치 및 방법

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KR900700184A
KR900700184A KR1019890701837A KR890701837A KR900700184A KR 900700184 A KR900700184 A KR 900700184A KR 1019890701837 A KR1019890701837 A KR 1019890701837A KR 890701837 A KR890701837 A KR 890701837A KR 900700184 A KR900700184 A KR 900700184A
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cooling
boron
transport member
reaction
chamber
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더블유. 와이머 알랜
지. 무어 윌리암
피. 로치 레이몬드
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원본미기재
더 다우 케미칼 캄파니
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Abstract

내용 없음

Description

균일하고 미세한 붕소- 함유 세라믹 분말을 제조하는 장치 및 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 반응물 및 생성물의 경로를 화살표를 사용하여 도시한 본 발명에 따른 한가지 양태의 반응기 장치의 횡단면도이다. 제2도는 제1도에 도시된 장치의 상부의 상세 횡단면도이다.

Claims (26)

  1. 냉각 반응물 수송부재(6), 반응실(16), 가열수단(40) 및 냉각실(42)을 포함하며, 여기서, 냉각 반응물 수송부재(6)는 반응물 수송부재(6)의 주변을 따라 한정되고 반응실(16)과 연결되는 개스-흐름공간(20)과 함께 반응실(16)과 연결되는 도 관을 한정하는 벽을 포함하고 반응실(16)은 반응영역(28)을 한정하는 벽(26)을 포함하며 가열수단(40)은 반응영역(28)에 결합되어 있으며 반응영역(28) 내의 반응물을가 열하는데 적합하고 냉각실(42)은 반응실(16)과 연결되는 냉각영역(44)을 한정하는 벽을 포함하며 반응물 수송부재(6), 반응실(16) 및 냉각실(42)의 온도는 독립적으로 제어가능하고 반응물이 반응물 수송부재(6)를 통하여 반응영역(28) 내로 공급되고 반응하여 생성물을 형성한 다음, 생성물이 냉각영역(44) 내로 공급되어 균일하고 미세한 세라믹 분말을 제조함을 특징으로하여, 균일하고 미세한 세라믹 분말을 제조하는 장치.
  2. 제1항에 있어서, 탄소질 물질이 흑연인 장치.
  3. 제1항에 있어서, 가열수단이 반응실(16)의 벽(26)을 직접 또는 간접적으로 가열하는데 적합한 전류의 공급원인 장치.
  4. 제3항에 있어서, 가열수단이 반응영역의 외부에 위치한 적어도 하나의 전극(40)인 장치.
  5. 제1항에 있어서, 반응실(16)을 둘러싸는 개스 정화영역(34)을 추가로 포함하는 장치.
  6. 제1항에 있어서, 반응물 수송 부재(6)가 냉각 자켓(cooling jacket)(8)에 의해 냉각되는 장치.
  7. 제1항에 있어서, 냉각실(42)이 냉각자켓에 의해 냉각되는 장치.
  8. 제1항에 있어서, 반응실(16)이 냉각 입구(46)에 의해 냉각실에 연결되며, 냉각 영역(44)의 직경이 냉각입구(46)의 직경보다 더 큰 장치.
  9. 반응기〔이 반응기는 냉각반응물 수송 부재(6) 반응실(16), 가열수단(40) 및 냉각실(42)을 포함하며, 여기서 냉각반응물 수송부재(6)는 반응물 수송부재(6)의 주변을 따라 한정되고 반응실(16)과 연결되는 개스-흐름공간(20)과 함께 반응실(16)과 연결되는 도관을 한정하는 벽을 포함하고, 반응실(16)은 반응영역(28)을 한정하는벽 (26)을 포함하며, 가열수단(40)은 반응영역(28)에 결합되어 있으며 반응영역(28)내의 반응물을 가열하는데 적합하고, 냉각실(42)은 반응실(16)과 연결되는 냉각영역(44)을 한정하는 벽을 포함하며, 반응물 수송부재(6), 반응실(16) 및 냉각실(42)의 온도는 독립적으로 제어가능하고, 반응물이 반응물 수송 부재(6)를 통해 반응 영역(28)내로 공급되고 반응하여 생성물을 형성한 다음, 생성물이 냉각 영역(44)내로 공급되어 균일하고 미세한 세라믹 분말을 제조하며, 산화붕소 또는 그의 수화물 및 탄소 공급원을 반응물의 용융온도 이하의 온도에서 유지되는 냉각반응물 수송부재(6)를 통해 공급함을 특징으로 한다〕 내로 산화 붕소 또는 그의 수화물 및 탄소 공급원을 반응물로서 공급하고, 반응 영역 중 약 1400℃ 이상의 온도에서 균일하고 미세한 붕소-함유 세라믹 분말을 형성하는데 충분한 반응조건 하에서 반응물을 반응시킨 다음, 세라믹 분말을 내각영역(44)에서 냉각시킴을 특징으로 하여, 탄소열 환원반응에 의해 균일하고 미세한 붕소-함유 세라믹 분말을 제조하는 방법
  10. 제9항에 있어서, 산화붕소 또는 그의 수화물 및 적어도 하나의 다른 무기 산화물을 냉각 반응물 수송부재(6)를 통하여 공급하는 방법.
  11. 제10항에 있어서, 다른 무기 산화물이 이산화티타늄, 이산화실리콘, 산화알루미늄, 이산화지르코늄 또는 그들의 혼합물인 방법.
  12. 제9항에있어서, 탄소공급원이탄소, 카아본블랙, 아세틸렌카아본블랙, 탄수화물, 비닐리덴 클로라이드중합체 또는 그들의 혼합물인 방법.
  13. 제9항에 있어서, 개스가 개스-흐름공간(20)을 통하여 반응실(16)내로 유입되는 방법.
  14. 제13항에 있어서, 개스가 불활성 개스, 반응-적합성 개스 또는 반응물 개스인 방법
  15. 제14항에 있어서, 개스가 아르곤, 일산화탄소, 질소, 헬륨, 수소 또는 그들의 혼합물인 방법.
  16. 제9항에 있어서, 반응실(16)을 둘러싸고, 불활성 개스 또는 반응-적합성 개스를 함유하는 개스 정화영역(34)을 추가로 포함하는 방법.
  17. 제9항에 있어서, 산화붕소 또는그의 수화물 및 탄소공급원이 불활성개스 또는 반응-적합성 개스중에 비말동반되는 방법.
  18. 제17항에 있어서, 개스가 아르곤, 일산화탄소, 질소, 헬륨, 수소 또는 그들의 혼합물인 방법.
  19. 제9항에 있어서, 반응물 수송부재(6)가 350℃ 이하의 온도에서 유지되는 방법.
  20. 제9항에 있어서, 반응물 수송부재(6)가 100℃ 이하의 온도에서 유지되는 방법.
  21. 제9항에 있어서, 반응실(16)이 1600℃ 이상의 온도에서 유지되는 방법.
  22. 제9항에 있어서, 냉각실(42)이 350℃ 이하의 온도에서 유지되는 방법.
  23. 제9항에 있어서, 냉각실(42)이 100℃ 이하의 온도에서 유지되는 방법.
  24. 제12항 또는 제13항에 있어서, 생성물이 붕소 탄화물, 붕소-풍부 붕소 탄화물, 붕소 질화물, 티타늄디보라이드, 실리콘헥사보라이드, 티타늄 디보라이드/붕소 탄화물 복합체, 티타늄 디보라이드/붕소-풍부 붕소 탄화물 복합체, 실리콘 탄화물/붕소 탄화물 복합체, 실리콘 탄화물/붕소-풍부 붕소 탄화물 복합체, 실리콘 탄화물/붕소 질화물 복합체,실리콘 탄화물/실리콘 헥사 보라이드 복합체 또는 그들의 혼합물인 방법.
  25. 제9항의 붕소 - 함유 세라믹 분말 생성물로부터 제조된 조밀한 세라믹 부품.
  26. 제25항에 있어서, 세라믹 분말이 붕소 탄화물, 붕소-풍부 붕소 탄화물, 붕소 질화물, 티타늄 디보라이드, 실리콘 헥사 보라이드 , 티타늄 디보라이드/붕소 탄화물 복합체, 티타늄 디보라이드/붕소-풍부 붕소 탄화물 복합체,실리콘 탄화물/붕소 탄화물 복합체, 실리콘 탄화물/붕소-풍부 붕소 탄화물 복합체, 실리콘 탄화물 붕소 질화물 복합체. 실리콘 탄화물/실리콘 헥사보라이드 복합체 또는 그들의 혼합물인 조밀한부품.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890701837A 1988-02-05 1989-02-01 균일하고 미세한 붕소-함유 세라믹 분말을 제조하는 장치 및 방법 KR900700184A (ko)

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US07/152,613 US5110565A (en) 1988-02-05 1988-02-05 Apparatus for producing uniform, fine ceramic powder
US152,613 1988-02-05
PCT/US1989/000399 WO1989007011A1 (en) 1988-02-05 1989-02-01 Apparatus and method for producing uniform, fine boron-containing ceramic powders

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Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4804525A (en) * 1986-04-14 1989-02-14 The Dow Chemical Company Producing boron carbide
US5126121A (en) * 1991-05-03 1992-06-30 The Dow Chemical Company Process for preparing aluminum nitride powder via controlled combustion nitridation
US5219804A (en) * 1992-01-10 1993-06-15 The Dow Chemical Company Process for preparing ultrafine aluminum nitride powder
US7576296B2 (en) * 1995-03-14 2009-08-18 Battelle Energy Alliance, Llc Thermal synthesis apparatus
AT404912B (de) * 1996-11-04 1999-03-25 Plansee Ag Verfahren zur herstellung von pulver-pressansätzen für feinkörniges hartmetall
US6214078B1 (en) 1997-11-25 2001-04-10 Ferro Corporation High temperature ceramic filter
ES2188298B1 (es) * 1999-06-15 2004-08-16 Fundacion Inasmet Procedimiento continuo de fabricacion de materiales en polvo por combustion y reactor para la puesta en practica del mismo.
WO2001046067A1 (en) * 1999-12-21 2001-06-28 Bechtel Bwxt Idaho, Llc Hydrogen and elemental carbon production from natural gas and other hydrocarbons
EP1257377A4 (en) 2000-02-22 2004-04-21 Omg Americas Inc FAST CONVERSION OF A METAL CONTAINER FOR THE PRODUCTION OF METALS OR METAL OXIDES
CN1289392C (zh) * 2001-07-30 2006-12-13 三菱麻铁里亚尔株式会社 微粒碳化钨粉末的制造方法及粉末
US7303593B1 (en) 2002-09-16 2007-12-04 Sandia Corporation Method to blend separator powders
GB2445218B (en) * 2006-09-21 2011-05-25 Smith International Atomic layer deposition nanocoating on cutting tool powder materials
JP2010520846A (ja) * 2007-02-22 2010-06-17 ボロン コンパウンズ エルティーディー． セラミック材料の調製方法
JP5168690B2 (ja) * 2007-03-23 2013-03-21 独立行政法人産業技術総合研究所 ホウ素ナノ粒子又はホウ素含有ナノ粒子及びその製造方法
JP2010535693A (ja) * 2007-08-08 2010-11-25 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド 無加圧焼結高密度炭化ホウ素材料を製造する方法
KR101121803B1 (ko) * 2008-01-17 2012-03-20 경희대학교 산학협력단 정밀온도 제어가 가능한 연속식 냉각 결정화 반응장치 및이를 포함하는 결정화 분리공정 시스템
US20100055017A1 (en) * 2008-09-03 2010-03-04 Ppg Industries Ohio, Inc. Methods for the production of ultrafine metal carbide particles and hydrogen
EP2456733A4 (en) * 2009-07-24 2013-03-13 Saint Gobain Ceramics PROCESS FOR FORMING SINTERED BORON CARBIDE
JP5866690B2 (ja) * 2009-09-04 2016-02-17 国立研究開発法人産業技術総合研究所 球状ナノ粒子の製造方法及び同製造方法によって得られた球状ナノ粒子
WO2011053872A1 (en) * 2009-10-30 2011-05-05 Alcoa Inc. Methods of making titanium diboride powders
JP5495748B2 (ja) * 2009-12-10 2014-05-21 株式会社トクヤマ 窒化アルミニウム粉末
DE102011050171A1 (de) * 2011-05-06 2012-11-08 Heinrich-Heine-Universität Düsseldorf Verfahren und Anordnung zum Detektieren eines ersten Gases in einem wenigstens ein weiteres Gas umfassenden Gasgemisch
EP3475246A4 (en) * 2016-06-23 2020-01-08 Alcoa USA Corp. SYSTEMS AND METHODS FOR THE PRODUCTION OF CERAMIC POWDERS AND CERAMIC PRODUCTS
CN109476481A (zh) * 2016-07-26 2019-03-15 奥科宁克有限公司 用于制备氮化硼陶瓷粉末的方法
CN106631032B (zh) * 2016-10-12 2019-10-15 淄博晶亿陶瓷科技有限公司 一种高纯二硼化钛粉体及其制备方法
US11193191B2 (en) * 2017-11-28 2021-12-07 University Of Maryland, College Park Thermal shock synthesis of multielement nanoparticles
CN108445146B (zh) * 2018-05-28 2024-02-02 湖南三德科技股份有限公司 一种用于元素分析仪的均流机构
WO2020046229A2 (en) * 2018-08-27 2020-03-05 Ak-Kim Kimya Sanayi Ve Ticaret Anonim Sirketi Production of boron carbide, metal carbide and/or metal boride at high temperature and in continuous production line
CN110937605B (zh) * 2019-12-18 2023-03-28 赛福纳米科技(徐州)有限公司 碳化硼纯化方法
CN114409412A (zh) * 2020-10-28 2022-04-29 中国科学院理化技术研究所 一种SiB6的化学炉合成方法
CN117387368A (zh) * 2022-01-19 2024-01-12 福建华清电子材料科技有限公司 石墨炉的配气系统

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA665291A (en) * 1963-06-18 Union Carbide Corporation Ultrafine titanium boride
US3353885A (en) * 1966-02-01 1967-11-21 Howard C Hanson Expansible multi-purpose cabinet
US3989782A (en) * 1973-12-29 1976-11-02 Joseph Lucas Limited Method of forming a sintered ceramic product
US4266977A (en) * 1975-02-03 1981-05-12 Ppg Industries, Inc. Submicron carbon-containing titanium boride powder and method for preparing same
DE2620313C3 (de) * 1976-05-07 1981-04-09 Andrjušin, Aleksandr Iosifovič Verfahren zur Erzeugung von Karbiden und Anlage zur Durchführung des Verfahrens
JPS59111905A (ja) * 1982-12-15 1984-06-28 Kawasaki Steel Corp 窒化珪素またはサイアロンの製造方法およびその装置
US4597948A (en) * 1982-12-27 1986-07-01 Sri International Apparatus for obtaining silicon from fluosilicic acid
US4666873A (en) * 1983-10-14 1987-05-19 General Electric Company Aluminum nitride-boron nitride composite article and method of making same
JPS60248234A (ja) * 1984-05-25 1985-12-07 Hitachi Ltd プラズマ粉体処理装置
US4643890A (en) * 1984-09-05 1987-02-17 J. M. Huber Corporation Perforated reactor tube for a fluid wall reactor and method of forming a fluid wall
FR2591412A1 (fr) * 1985-12-10 1987-06-12 Air Liquide Procede de fabrication de poudres et reacteur etanche a plasma micro-onde
JPH0638911B2 (ja) * 1986-03-08 1994-05-25 日本セメント株式会社 非酸化物粉末の製造方法

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CA1334331C (en) 1995-02-14
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ES2033524T3 (es) 1993-03-16
DE68900886D1 (de) 1992-04-09
JPH02503168A (ja) 1990-10-04
NO174694B (no) 1994-03-14
FI894697A0 (fi) 1989-10-04
BR8905298A (pt) 1990-11-27
CN1036003A (zh) 1989-10-04
IL89163A (en) 1992-07-15
ATE73007T1 (de) 1992-03-15
JP2874925B2 (ja) 1999-03-24
EP0327401B1 (en) 1992-03-04
IL89163A0 (en) 1989-09-10
NO893946L (no) 1989-12-04
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EP0327401A2 (en) 1989-08-09
EP0327401A3 (en) 1990-03-07

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