JP2010535693A - 無加圧焼結高密度炭化ホウ素材料を製造する方法 - Google Patents
無加圧焼結高密度炭化ホウ素材料を製造する方法 Download PDFInfo
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Abstract
Description
本出願は、2007年8月8日に出願された米国仮特許出願第60/964,015号の利益を主張する。上記出願の教示全体は、参照により本明細書に組み込まれる。
によって計算される。炭化ホウ素(B4C)、炭化ケイ素(SiC)および炭素(C)の密度は、それぞれ、約2.5g/cm3、約3.2g/cm3および約2.27g/cm3である。
実施例1:焼結炭化ホウ素円盤の製造
それぞれ、6.0ミクロンのおよび4m2/gの、平均粒径(D50)および平均表面積(SA)を有し、1.5%の酸素含量を有する炭化ホウ素粉末(Dalian Jinma、China)を、SiCグリットを用いて摩滅粉砕した。80重量%の水、20重量%のイソプロピルアルコールおよび1重量%のシラン(Dow Corning Z6040)からなる水性媒体を粉砕処理のために使用した。炭化ホウ素粉末を、所望の0.6ミクロンのD50および少なくとも13.0m2/gのSAを有するように粉砕した。粉砕粉末の分析は、SiCグライディング媒体の摩滅によって最大10重量%のSiCの追加を示した。次いで、この粉砕炭化ホウ素粉末の表面上のB2O3を浸出させるために80℃高温水で2時間処理した。
表2に示すように、粉砕、乾燥、および洗浄工程の異なる組合せを用いる以外は実施例1で上記したとおりの同様の方法で炭化ホウ素の円盤を製造した。それぞれの炭化ホウ素の円盤は、円盤の総重量に基づいて約5重量%の元素炭素を含有し、これをその製造工程の間に導入した。焼成条件、酸素含量、SAおよびD50、ならびに最終製品の特定の機械的特性を表2にまとめる。
14重量%のSiCを含有する焼結炭化ホウ素製品を実施例1に記載したとおりに製造した。特定の機械的特性を表3にまとめる。比較として、文献に報告されたとおりに、ホットプレス炭化ホウ素製品の特定の機械的特性もその表にまとめる。ホットプレス製品は一般に、焼結補助材として(実施例1のとおりの)同様の量の炭素以外は未洗浄の粉末を用いて製造する。硬度は、2kg荷重を用いるビッカース圧子押込み法によって測定した。破壊靭性は、Chantikuletらによって記載された押込みクラック長さ(Indentation Crack Length)法によって決定した。4点たわみ強さは、ASTM MIL Spec 1982手順を用いて測定した。
本発明をその実施例の実施形態に関して特に示しおよび説明してきたが、形態および詳細における様々な変化が、添付の特許請求の範囲で包含される本発明の範囲から逸脱することなくそこでなされ得ることが当業者によって理解される。
Claims (20)
- 炭化ホウ素材料を製造する方法であって、
a)炭化ホウ素粉末を本質的に純粋な水によって高温で洗浄し、洗浄炭化ホウ素粉末を生成する工程;
b)焼結補助材を該洗浄炭化ホウ素粉末と混合する工程;
c)該混合物を加圧成形し、それにより所望の成形材料を形成する工程;および
d)該成形材料を焼結する工程
を含む、方法。 - 前記炭化ホウ素粉末の洗浄のための高温が、約70℃から約90℃の範囲である、請求項1に記載の方法。
- 前記炭化ホウ素粉末の洗浄のための高温が約80℃である、請求項2に記載の方法。
- 前記炭化ホウ素粉末が約1時間から約3時間洗浄される、請求項2に記載の方法。
- 前記炭化ホウ素粉末が約2時間洗浄される、請求項4に記載の方法。
- 前記焼成補助材が、前記炭化ホウ素粉末の重量に基づいて約1重量%から約7重量%の炭素に相当する量で前記炭化ホウ素粉末に添加される、請求項1に記載の方法。
- 前記焼成補助材が、前記炭化ホウ素粉末の重量に基づいて約5重量%の炭素に相当する量で前記炭化ホウ素粉末に添加される、請求項6に記載の方法。
- 前記焼成補助材がフェノール樹脂である、請求項6に記載の方法。
- 前記フェノール樹脂の水溶液が、前記洗浄炭化ホウ素粉末と混合される、請求項8に記載の方法。
- 前記フェノール樹脂が、前記炭化ホウ素粉末の重量の約12重量%の量で前記炭化ホウ素粉末と混合される、請求項8に記載の方法。
- 前記成形材料の焼結が、外部圧力の非存在下で行われる、請求項1に記載の方法。
- 前記成形材料が、約2,100℃から約2,500℃の範囲の温度で焼結される、請求項1に記載の方法。
- 前記成形材料が、約2,100℃から約2,200度の範囲の温度で焼結される、請求項12に記載の方法。
- 炭化ホウ素材料を製造する方法であって、
a)炭化ホウ素粉末を水性粉砕媒体中で炭化ケイ素グリットを用いて粉砕する工程;
b)該粉砕炭化ホウ素粉末を本質的に純粋な水によって約70℃から90℃の温度で洗浄し、洗浄炭化ホウ素粉末を生成する工程;
c)炭素前駆物質を該洗浄炭化ホウ素粉末と混合する工程であり、該炭素前駆物質が該炭化ホウ素粉末の重量に基づいて約1重量%から約5重量%に相当する量である工程;
d)該洗浄炭化ホウ素粉末と該炭素前駆物質との混合物を乾燥させ、乾燥混合物を形成する工程;
e)該乾燥混合物を加圧成形し、それにより所望の成形材料を形成する工程;および
f)該成形材料を不活性雰囲気下で約2100℃から約2500℃の範囲の温度で焼結する工程
を含む、方法。 - 前記炭素前駆物質が、フェノール樹脂である、請求項14に記載の方法。
- 前記フェノール樹脂が、前記炭化ホウ素粉末の重量に基づいて約12重量%の量で添加される、請求項15に記載の方法。
- 前記水性粉砕媒体が水およびイソプロピルアルコールを含有し、水:イソプロピルアルコールの重量比が約3:1から約5:1の範囲である、請求項16に記載の方法。
- 前記成形材料を焼結する前に、前記成形材料を約550℃から約650℃の範囲の温度で予備加熱する工程をさらに含む、請求項14に記載の方法。
- 焼結炭化ホウ素材料であって、
a)炭化ホウ素;
b)元素炭素;および
c)炭化ホウ素成分の総重量に基づいて約0.6重量%以下の酸素、
を含有する炭化ホウ素成分を含み、
該焼結炭化ホウ素材料が、理論密度の少なくとも約99%の密度を有する、焼結炭化ホウ素材料。 - 焼結炭化ホウ素材料であって、
a)炭化ホウ素;
b)炭化ケイ素;
c)元素炭素;および
d)炭化ホウ素成分の総重量に基づいて約0.3重量%以下の酸素、
を含有する炭化ホウ素成分を含み、
該焼結炭化ホウ素材料が、理論密度の少なくとも約97%の密度を有する、焼結炭化ホウ素材料。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US96401507P | 2007-08-08 | 2007-08-08 | |
PCT/US2008/009484 WO2009020635A2 (en) | 2007-08-08 | 2008-08-07 | Method of preparing pressureless sintered, highly dense boron carbide materials |
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Publication Number | Publication Date |
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JP2010535693A true JP2010535693A (ja) | 2010-11-25 |
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US (2) | US7919040B2 (ja) |
EP (1) | EP2181078A2 (ja) |
JP (1) | JP2010535693A (ja) |
WO (1) | WO2009020635A2 (ja) |
Families Citing this family (9)
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US8598057B1 (en) * | 2009-05-04 | 2013-12-03 | Verco Materials, Llc | Multi-hit unitary seamless, and continuous ceramic ballistic body for armor including body armor, vehicle armor, and aircraft armor |
JP2013500226A (ja) * | 2009-07-24 | 2013-01-07 | サン−ゴバン セラミックス アンド プラスティクス,インコーポレイティド | 高靱性セラミック複合材料 |
WO2011011606A2 (en) * | 2009-07-24 | 2011-01-27 | Saint-Gobain Ceramics & Plastics, Inc. | Methods of forming sintered boron carbide |
CN105777130B (zh) * | 2016-03-17 | 2018-08-03 | 东北大学 | 反应烧结碳化硼陶瓷复合材料的凝胶注模成型制备方法 |
CN108383528A (zh) * | 2018-05-03 | 2018-08-10 | 芜湖天科生物科技有限公司 | 一种喷嘴专用碳化硼材料及其制备方法 |
CN108395247A (zh) * | 2018-05-04 | 2018-08-14 | 芜湖天科生物科技有限公司 | 一种碳化硼-氮化铝复合的陶瓷喷嘴及其制备方法 |
CN111348916A (zh) * | 2020-02-17 | 2020-06-30 | 江苏大学 | 一种高性能碳化硼研磨介质、制备方法及其应用 |
US20220289635A1 (en) * | 2021-03-10 | 2022-09-15 | National Chung Shan Institute Of Science And Technology | Method for preparing carbon/boron carbide composite material |
EP4219427A1 (en) | 2022-02-01 | 2023-08-02 | Consiglio Nazionale Delle Ricerche - CNR | Process for producing ceramic composite materials for ballistic purposes based on b4c, tib2 and b4c/tib2 |
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JPS58204873A (ja) * | 1982-05-13 | 1983-11-29 | エレクトロシユメルツヴエルク・ケンプテン・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | α−炭化ケイ素,炭化ホウ素および遊離炭素から成る実際に無孔な多結晶焼結体および該焼結体の製造方法 |
JPS6353231A (ja) * | 1986-06-17 | 1988-03-07 | ザ リ−ジエンツ オブ ザ ユニバ−シテイ オブ カリフオルニア | 炭化硼素−、硼素−および硼化物−反応性金属サ−メットの溶浸処理 |
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2008
- 2008-08-07 JP JP2010519982A patent/JP2010535693A/ja not_active Ceased
- 2008-08-07 WO PCT/US2008/009484 patent/WO2009020635A2/en active Application Filing
- 2008-08-07 US US12/221,916 patent/US7919040B2/en not_active Expired - Fee Related
- 2008-08-07 EP EP08795108A patent/EP2181078A2/en not_active Withdrawn
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2011
- 2011-03-10 US US13/045,356 patent/US20110160035A1/en not_active Abandoned
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JPS58204873A (ja) * | 1982-05-13 | 1983-11-29 | エレクトロシユメルツヴエルク・ケンプテン・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | α−炭化ケイ素,炭化ホウ素および遊離炭素から成る実際に無孔な多結晶焼結体および該焼結体の製造方法 |
JPH03503883A (ja) * | 1986-04-14 | 1991-08-29 | オーエムジー・アメリカズ・インコーポレーテツド | 炭化ホウ素の製造方法 |
JPS6353231A (ja) * | 1986-06-17 | 1988-03-07 | ザ リ−ジエンツ オブ ザ ユニバ−シテイ オブ カリフオルニア | 炭化硼素−、硼素−および硼化物−反応性金属サ−メットの溶浸処理 |
JP2874925B2 (ja) * | 1988-02-05 | 1999-03-24 | ザ・ダウ・ケミカル・カンパニー | 均一な、微細なホウ素含有セラミツク粉末を製造する装置および方法 |
JPH04160012A (ja) * | 1990-10-24 | 1992-06-03 | Showa Denko Kk | 炭化ホウ素微粉末の製造方法 |
US5252267A (en) * | 1993-03-18 | 1993-10-12 | Holcombe Cressie E | Process for microwave sintering boron carbide |
WO2005082809A1 (en) * | 2004-02-20 | 2005-09-09 | Diamond Innovations, Inc. | Sintered compact |
Also Published As
Publication number | Publication date |
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WO2009020635A8 (en) | 2009-04-09 |
US7919040B2 (en) | 2011-04-05 |
WO2009020635A2 (en) | 2009-02-12 |
EP2181078A2 (en) | 2010-05-05 |
US20090047544A1 (en) | 2009-02-19 |
WO2009020635A3 (en) | 2009-11-12 |
US20110160035A1 (en) | 2011-06-30 |
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