KR900019108A - 마그네트론 스퍼터링 장치 - Google Patents

마그네트론 스퍼터링 장치

Info

Publication number
KR900019108A
KR900019108A KR1019900007247A KR900007247A KR900019108A KR 900019108 A KR900019108 A KR 900019108A KR 1019900007247 A KR1019900007247 A KR 1019900007247A KR 900007247 A KR900007247 A KR 900007247A KR 900019108 A KR900019108 A KR 900019108A
Authority
KR
South Korea
Prior art keywords
magnetron sputtering
sputtering device
magnetron
sputtering
Prior art date
Application number
KR1019900007247A
Other languages
English (en)
Other versions
KR0168840B1 (ko
Inventor
엘.앤더슨 로버트
씨.헬머 죤
Original Assignee
배리안 어소시에이츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 배리안 어소시에이츠 인코포레이티드 filed Critical 배리안 어소시에이츠 인코포레이티드
Publication of KR900019108A publication Critical patent/KR900019108A/ko
Application granted granted Critical
Publication of KR0168840B1 publication Critical patent/KR0168840B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
    • H01J25/50—Magnetrons, i.e. tubes with a magnet system producing an H-field crossing the E-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1019900007247A 1989-05-22 1990-05-21 마그네트론 스퍼터링 장치 KR0168840B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US355,713 1989-05-22
US07/355,713 US4995958A (en) 1989-05-22 1989-05-22 Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile

Publications (2)

Publication Number Publication Date
KR900019108A true KR900019108A (ko) 1990-12-24
KR0168840B1 KR0168840B1 (ko) 1999-01-15

Family

ID=23398527

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900007247A KR0168840B1 (ko) 1989-05-22 1990-05-21 마그네트론 스퍼터링 장치

Country Status (6)

Country Link
US (1) US4995958A (ko)
EP (1) EP0399710B1 (ko)
JP (1) JP3069576B2 (ko)
KR (1) KR0168840B1 (ko)
CA (1) CA2017206C (ko)
DE (1) DE69007538T2 (ko)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130005A (en) * 1990-10-31 1992-07-14 Materials Research Corporation Magnetron sputter coating method and apparatus with rotating magnet cathode
US5409590A (en) * 1989-04-17 1995-04-25 Materials Research Corporation Target cooling and support for magnetron sputter coating apparatus
DE69133275T2 (de) * 1990-01-26 2004-04-29 Varian Semiconductor Equipment Associates Inc., Gloucester Sputtervorrichtung mit rotierender Magnetanordnung, deren Geometrie ein vorgegebenes Targetabtragsprofil erzeugt
EP0439360A3 (en) * 1990-01-26 1992-01-15 Varian Associates, Inc. Rotating sputtering apparatus for selected erosion
DE4107505A1 (de) * 1991-03-08 1992-09-10 Leybold Ag Verfahren zum betrieb einer sputteranlage und vorrichtung zur durchfuehrung des verfahrens
DE4125110C2 (de) * 1991-07-30 1999-09-09 Leybold Ag Magnetron-Zerstäubungskathode für Vakuumbeschichtungsanlagen
US5458759A (en) * 1991-08-02 1995-10-17 Anelva Corporation Magnetron sputtering cathode apparatus
KR950000906B1 (ko) * 1991-08-02 1995-02-03 니찌덴 아넬바 가부시기가이샤 스퍼터링장치
US5194131A (en) * 1991-08-16 1993-03-16 Varian Associates, Inc. Apparatus and method for multiple ring sputtering from a single target
US5188717A (en) * 1991-09-12 1993-02-23 Novellus Systems, Inc. Sweeping method and magnet track apparatus for magnetron sputtering
US5314597A (en) * 1992-03-20 1994-05-24 Varian Associates, Inc. Sputtering apparatus with a magnet array having a geometry for a specified target erosion profile
US5248402A (en) * 1992-07-29 1993-09-28 Cvc Products, Inc. Apple-shaped magnetron for sputtering system
US5417833A (en) * 1993-04-14 1995-05-23 Varian Associates, Inc. Sputtering apparatus having a rotating magnet array and fixed electromagnets
CH690805A5 (de) * 1993-05-04 2001-01-15 Unaxis Balzers Ag Magnetfeldunterstützte Zerstäubungsanordnung und Vakuumbehandlungsanlage hiermit.
TW271490B (ko) * 1993-05-05 1996-03-01 Varian Associates
US5738767A (en) * 1994-01-11 1998-04-14 Intevac, Inc. Substrate handling and processing system for flat panel displays
US5597459A (en) * 1995-02-08 1997-01-28 Nobler Technologies, Inc. Magnetron cathode sputtering method and apparatus
GB2319262B (en) * 1995-07-10 1999-02-24 Cvc Products Inc Permanent magnet array apparatus and method
US5770025A (en) * 1995-08-03 1998-06-23 Nihon Shinku Gijutsu Kabushiki Kaisha Magnetron sputtering apparatus
US5702573A (en) 1996-01-29 1997-12-30 Varian Associates, Inc. Method and apparatus for improved low pressure collimated magnetron sputter deposition of metal films
US5865970A (en) * 1996-02-23 1999-02-02 Permag Corporation Permanent magnet strucure for use in a sputtering magnetron
US5830327A (en) * 1996-10-02 1998-11-03 Intevac, Inc. Methods and apparatus for sputtering with rotating magnet sputter sources
US5685959A (en) * 1996-10-25 1997-11-11 Hmt Technology Corporation Cathode assembly having rotating magnetic-field shunt and method of making magnetic recording media
JPH10195649A (ja) * 1996-12-27 1998-07-28 Sony Corp マグネトロンスパッタ装置および半導体装置の製造方法
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
US5876574A (en) * 1997-04-23 1999-03-02 Applied Materials, Inc. Magnet design for a sputtering chamber
US6258217B1 (en) 1999-09-29 2001-07-10 Plasma-Therm, Inc. Rotating magnet array and sputter source
US6402903B1 (en) 2000-02-04 2002-06-11 Steag Hamatech Ag Magnetic array for sputtering system
US6436252B1 (en) 2000-04-07 2002-08-20 Surface Engineered Products Corp. Method and apparatus for magnetron sputtering
US6585870B1 (en) 2000-04-28 2003-07-01 Honeywell International Inc. Physical vapor deposition targets having crystallographic orientations
JP4371569B2 (ja) * 2000-12-25 2009-11-25 信越化学工業株式会社 マグネトロンスパッタ装置とそれを用いたフォトマスクブランクの製造方法
DE60236264D1 (de) * 2001-04-24 2010-06-17 Tosoh Smd Inc Verfahren zur optimierung des targetprofils
KR100439474B1 (ko) * 2001-09-12 2004-07-09 삼성전자주식회사 스퍼터링 장치
US7041200B2 (en) * 2002-04-19 2006-05-09 Applied Materials, Inc. Reducing particle generation during sputter deposition
US7297247B2 (en) * 2003-05-06 2007-11-20 Applied Materials, Inc. Electroformed sputtering target
US20040262148A1 (en) * 2003-06-23 2004-12-30 Cheng Yuanda Randy Sputter cathode assembly for uniform film deposition
WO2005007920A2 (en) * 2003-07-14 2005-01-27 Tosoh Smd, Inc. Sputtering target assembly having low conductivity backing plate and method of making same
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
US7018515B2 (en) * 2004-03-24 2006-03-28 Applied Materials, Inc. Selectable dual position magnetron
GB0409337D0 (en) * 2004-04-27 2004-06-02 Trikon Technologies Ltd Methods and apparatus for controlling rotating magnetic fields
US20050274610A1 (en) * 2004-05-25 2005-12-15 Victor Company Of Japan, Limited Magnetron sputtering apparatus
US7436992B2 (en) * 2004-07-30 2008-10-14 General Electric Company Methods and apparatus for testing a component
EP1799876B1 (en) * 2004-10-18 2009-02-18 Bekaert Advanced Coatings Flat end-block for carrying a rotatable sputtering target
US7670436B2 (en) 2004-11-03 2010-03-02 Applied Materials, Inc. Support ring assembly
US7186319B2 (en) * 2005-01-05 2007-03-06 Applied Materials, Inc. Multi-track magnetron exhibiting more uniform deposition and reduced rotational asymmetry
DE602006004712D1 (de) * 2005-03-11 2009-02-26 Bekaert Advanced Coatings In rechtem winkel angeordneter einzelendblock
DE102005019101A1 (de) * 2005-04-25 2006-10-26 Steag Hama Tech Ag Verfahren und Vorrichtung zum Beschichten von Substraten
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US20070051616A1 (en) * 2005-09-07 2007-03-08 Le Hienminh H Multizone magnetron assembly
US7762114B2 (en) * 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US8647484B2 (en) 2005-11-25 2014-02-11 Applied Materials, Inc. Target for sputtering chamber
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
JP4768689B2 (ja) * 2006-09-22 2011-09-07 株式会社東芝 マグネトロン型スパッタリング装置および半導体装置の製造方法
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8968536B2 (en) * 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
JP2009007637A (ja) * 2007-06-28 2009-01-15 Fujitsu Ltd マグネトロンスパッタリング装置及び薄膜形成物製造方法
US20090084317A1 (en) * 2007-09-28 2009-04-02 Applied Materials, Inc. Atomic layer deposition chamber and components
US7901552B2 (en) * 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
JP5166531B2 (ja) * 2008-06-24 2013-03-21 キヤノンアネルバ株式会社 磁場発生装置及びプラズマ処理装置
US9771647B1 (en) 2008-12-08 2017-09-26 Michael A. Scobey Cathode assemblies and sputtering systems
US8137517B1 (en) 2009-02-10 2012-03-20 Wd Media, Inc. Dual position DC magnetron assembly
JP2010257515A (ja) * 2009-04-23 2010-11-11 Showa Denko Kk マグネトロンスパッタ装置、インライン式成膜装置、磁気記録媒体の製造方法、磁気記録再生装置
CN102534529B (zh) * 2010-12-24 2015-04-15 北京北方微电子基地设备工艺研究中心有限责任公司 磁控溅射源及磁控溅射设备
CN102560395B (zh) 2010-12-29 2014-07-16 北京北方微电子基地设备工艺研究中心有限责任公司 磁控源，磁控溅射设备和磁控溅射方法
CN102789938B (zh) * 2011-05-18 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 一种磁控管、磁控管的制造方法及物理沉积室
CN103088306B (zh) * 2011-11-03 2014-12-17 北京北方微电子基地设备工艺研究中心有限责任公司 磁控源和磁控溅射设备
CN103177918B (zh) * 2011-12-26 2016-08-31 北京北方微电子基地设备工艺研究中心有限责任公司 一种磁控管及等离子体加工设备
US8674327B1 (en) 2012-05-10 2014-03-18 WD Media, LLC Systems and methods for uniformly implanting materials on substrates using directed magnetic fields
CN104120390A (zh) * 2013-04-24 2014-10-29 北京北方微电子基地设备工艺研究中心有限责任公司 用于驱动磁控管的驱动机构及磁控溅射加工设备
CN105088162B (zh) * 2015-09-02 2019-03-05 京东方科技集团股份有限公司 一种磁控板、磁控装置及磁控溅射装置
CN106609352B (zh) * 2015-10-27 2019-04-23 北京北方华创微电子装备有限公司 溅射装置及其操作方法
BE1026859B1 (nl) 2018-10-22 2020-07-14 Soleras Advanced Coatings Bv Magnetron met geïntegreerd circuit voor het monitoren en controle
US11479847B2 (en) 2020-10-14 2022-10-25 Alluxa, Inc. Sputtering system with a plurality of cathode assemblies

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4444643A (en) * 1982-09-03 1984-04-24 Gartek Systems, Inc. Planar magnetron sputtering device
JPS6260866A (ja) * 1985-08-02 1987-03-17 Fujitsu Ltd マグネトロンスパツタ装置
JPH0240739B2 (ja) * 1986-03-11 1990-09-13 Fujitsu Ltd Supatsutasochi
JPS63149374A (ja) * 1986-12-12 1988-06-22 Fujitsu Ltd スパツタ装置

Also Published As

Publication number Publication date
DE69007538D1 (de) 1994-04-28
DE69007538T2 (de) 1994-07-21
US4995958A (en) 1991-02-26
EP0399710A1 (en) 1990-11-28
CA2017206A1 (en) 1990-11-22
JP3069576B2 (ja) 2000-07-24
JPH036372A (ja) 1991-01-11
KR0168840B1 (ko) 1999-01-15
EP0399710B1 (en) 1994-03-23
CA2017206C (en) 2000-04-25

Similar Documents

Publication Publication Date Title
KR900019108A (ko) 마그네트론 스퍼터링 장치
DE69117473D1 (de) Magnetron-Zerstäubungsvorrichtung
DE68928189T2 (de) Sputtertarget
GB2228268B (en) Facing targets sputtering device
DE68901343D1 (de) Magnetron.
DE68913331D1 (de) Magnetron.
KR900010048A (ko) 스퍼터링 장치
DE69031743D1 (de) Magnetronsputteranlage
KR900016210U (ko) 전자스위치
DE69025128D1 (de) Magnetrone
IT1267962B1 (it) Radar
KR950009893U (ko) 마그네트론 스퍼터링 장치
KR910007989U (ko) 마그네트론
KR890020007U (ko) 마그네트론
KR900007413U (ko) 마그네트론
IT1253702B (it) Radar
KR910009880U (ko) 마그네트론
KR910012970U (ko) 마그네트론
KR910001575U (ko) 마그네트론
KR940022675U (ko) 마그네트론 타입 스퍼터링 장치
KR900003765U (ko) 전자레인지용 마그네트론
KR910009431U (ko) 전자렌지의 마그네트론 취부구조 장치
KR940017857U (ko) 스퍼터링 장치
KR920015730U (ko) 마그네트론
KR930003542U (ko) 마그네트론

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20041005

Year of fee payment: 7

LAPS Lapse due to unpaid annual fee