KR900010048A - 스퍼터링 장치 - Google Patents

스퍼터링 장치

Info

Publication number
KR900010048A
KR900010048A KR1019890018307A KR890018307A KR900010048A KR 900010048 A KR900010048 A KR 900010048A KR 1019890018307 A KR1019890018307 A KR 1019890018307A KR 890018307 A KR890018307 A KR 890018307A KR 900010048 A KR900010048 A KR 900010048A
Authority
KR
South Korea
Prior art keywords
sputtering device
sputtering
Prior art date
Application number
KR1019890018307A
Other languages
English (en)
Other versions
KR940001677B1 (ko
Inventor
구니오 다나까
요오이찌 오오니시
마사히데 요꼬야마
Original Assignee
마쯔시다덴기산교 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마쯔시다덴기산교 가부시기가이샤 filed Critical 마쯔시다덴기산교 가부시기가이샤
Publication of KR900010048A publication Critical patent/KR900010048A/ko
Application granted granted Critical
Publication of KR940001677B1 publication Critical patent/KR940001677B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3421—Cathode assembly for sputtering apparatus, e.g. Target using heated targets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3497—Temperature of target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1019890018307A 1988-12-15 1989-12-11 스퍼터링 장치 KR940001677B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63-317477 1988-12-15
JP63317477A JPH02163368A (ja) 1988-12-15 1988-12-15 スパッタリング装置

Publications (2)

Publication Number Publication Date
KR900010048A true KR900010048A (ko) 1990-07-06
KR940001677B1 KR940001677B1 (ko) 1994-03-05

Family

ID=18088666

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890018307A KR940001677B1 (ko) 1988-12-15 1989-12-11 스퍼터링 장치

Country Status (3)

Country Link
US (1) US5082545A (ko)
JP (1) JPH02163368A (ko)
KR (1) KR940001677B1 (ko)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05331632A (ja) * 1992-06-01 1993-12-14 Matsushita Electric Ind Co Ltd レーザーアブレーション装置と薄膜形成方法
US5510088A (en) * 1992-06-11 1996-04-23 The United States Of America As Represented By The Secretary Of The Navy Low temperature plasma film deposition using dielectric chamber as source material
US5444302A (en) * 1992-12-25 1995-08-22 Hitachi, Ltd. Semiconductor device including multi-layer conductive thin film of polycrystalline material
US5429732A (en) * 1994-02-14 1995-07-04 Hughes Aircraft Company High rate ion beam sputtering process
US5490912A (en) * 1994-05-31 1996-02-13 The Regents Of The University Of California Apparatus for laser assisted thin film deposition
JP2882572B2 (ja) * 1994-08-31 1999-04-12 インターナショナル・ビジネス・マシーンズ・コーポレイション 金属薄膜をレーザで平坦化する方法
US5628889A (en) * 1994-09-06 1997-05-13 International Business Machines Corporation High power capacity magnetron cathode
FR2744462B1 (fr) * 1996-02-02 1998-02-27 Commissariat Energie Atomique Procede et dispositif pour realiser un depot par pulverisation cathodique a partir d'une cible portee a haute temperature
JP3429957B2 (ja) * 1996-08-28 2003-07-28 松下電器産業株式会社 スパッタリング方法及び装置
JP3680029B2 (ja) * 2001-08-08 2005-08-10 三菱重工業株式会社 金属薄膜の気相成長方法およびその気相成長装置
DE10142831A1 (de) * 2001-08-21 2003-03-13 Siemens Ag Verfahren zur Konditionierung einer Targetoberfläche bei einem Sputterbeschichtungsprozess eines Substrats und entsprechende Sputteranlage
US7431807B2 (en) * 2005-01-07 2008-10-07 Universal Display Corporation Evaporation method using infrared guiding heater

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3472751A (en) * 1965-06-16 1969-10-14 Ion Physics Corp Method and apparatus for forming deposits on a substrate by cathode sputtering using a focussed ion beam
FR1534917A (fr) * 1967-06-22 1968-08-02 Alcatel Sa Perfectionnements à l'obtention de dépôts par pulvérisation cathodique
US4046666A (en) * 1976-05-07 1977-09-06 The United States Of America As Represented By The United States Energy Research And Development Administration Device for providing high-intensity ion or electron beam
US4033843A (en) * 1976-05-27 1977-07-05 General Dynamics Corporation Simple method of preparing structurally high quality PbSnTe films
JPS5644770A (en) * 1979-09-17 1981-04-24 Matsushita Electric Ind Co Ltd Preparation of thin film
JPS6040082B2 (ja) * 1979-09-20 1985-09-09 松下電器産業株式会社 ト−ンア−ム駆動装置
US4407708A (en) * 1981-08-06 1983-10-04 Eaton Corporation Method for operating a magnetron sputtering apparatus
US4487675A (en) * 1983-01-31 1984-12-11 Meckel Benjamin B Magnetically-assisted sputtering method for producing vertical recording media
US4664769A (en) * 1985-10-28 1987-05-12 International Business Machines Corporation Photoelectric enhanced plasma glow discharge system and method including radiation means
JPH086177B2 (ja) * 1986-12-26 1996-01-24 松下電器産業株式会社 反応性スパッタリング方法
JP2555045B2 (ja) * 1987-01-19 1996-11-20 株式会社日立製作所 薄膜形成方法及びその装置
JPH01152271A (ja) * 1987-12-09 1989-06-14 Toshiba Corp スパッタ装置
DE3834318A1 (de) * 1988-10-08 1990-04-12 Leybold Ag Vorrichtung zum aufbringen dielektrischer oder metallischer werkstoffe
US4923585A (en) * 1988-11-02 1990-05-08 Arch Development Corporation Sputter deposition for multi-component thin films

Also Published As

Publication number Publication date
JPH02163368A (ja) 1990-06-22
US5082545A (en) 1992-01-21
KR940001677B1 (ko) 1994-03-05

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Legal Events

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E902 Notification of reason for refusal
E902 Notification of reason for refusal
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E701 Decision to grant or registration of patent right
GRNT Written decision to grant
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Payment date: 20030224

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