KR900017297A - 반도체 스위치 - Google Patents
반도체 스위치 Download PDFInfo
- Publication number
- KR900017297A KR900017297A KR1019900005542A KR900005542A KR900017297A KR 900017297 A KR900017297 A KR 900017297A KR 1019900005542 A KR1019900005542 A KR 1019900005542A KR 900005542 A KR900005542 A KR 900005542A KR 900017297 A KR900017297 A KR 900017297A
- Authority
- KR
- South Korea
- Prior art keywords
- terminal
- power
- mosfet
- energy storage
- semiconductor switch
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/693—Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
- H03K17/6874—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor in a symmetrical configuration
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도 내지 제6도는 본 발명의 여러 실시예에 따른 교류 반도체 스위치 회로의 개략도,
제7도는 제6도의 회로의 모놀리식 사양에 대한 개략적인 평면도,
제8도는 제7도 디바이스의 개략적인 부분 전단면도.
Claims (3)
- 내부 에너지 저장 수단을 갖는 무변압기 교류 반도체 스위치에 있어서, 교류 전력을 받는 제1, 제2전력 입력수단과, 교류 전력을 부하에 연결시키는 제1, 제2전력 출력 수단과, 제1, 제2MOSFET와, 여기서 제1, 제2MOSFET의 제1전력 단자들은 서로 결합되고, 제1MOSFET의 제2출력 단자는 제1전력 입력 수단에 연결되며, 제2MOSFET의 제2전력 단자는 제1전력 출력 수단에 연결되며, 제1, 제2MOSFET는 서로 연결된 제1, 제2게이트 전극을 가지며, 제2전력 입력 수단과 제2단자에 연결된 제1단자를 갖는 단일 방향의 도전 수단과, 정류 수단의 제2단자에 연결된 제1단자와, MOSFET의 제1출력 단자에 연결된 제2단자를 갖는 에너지 저장 수단과, 그리고 적어도 하나의 MOSFET에 대한 임계 전압을 초과하는 전압을 에너지 저장 수단에서 MOSFET 게이트 전극까지 연결하기 위하여, 에너지 저장 수단의 제1단자로부터 서로 연결된 게이트 전극까지 연장되는 연결 수단을 구비한 무변압기 교류 반도체 스위치.
- 제1항에 있어서, 상기 접속 수단은 광 입력 신호로 조절되는 가변 전압 수단을 구비한 무 변압기 교류 반도체 스위치.
- 제1항에 있어서, 상기 에너지 저장 수단은 캐패시터 또는 고체 배터리를 포함하는 무 변압기 교류 반도체 스위치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/341,881 US5006737A (en) | 1989-04-24 | 1989-04-24 | Transformerless semiconductor AC switch having internal biasing means |
US341881 | 1994-11-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR900017297A true KR900017297A (ko) | 1990-11-16 |
Family
ID=23339414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900005542A KR900017297A (ko) | 1989-04-24 | 1990-04-20 | 반도체 스위치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5006737A (ko) |
EP (1) | EP0398026A3 (ko) |
JP (1) | JPH02297614A (ko) |
KR (1) | KR900017297A (ko) |
Families Citing this family (51)
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JPH05122035A (ja) * | 1991-05-10 | 1993-05-18 | Fuji Electric Co Ltd | 駆動電源内蔵型半導体装置 |
US5225687A (en) * | 1992-01-27 | 1993-07-06 | Jason Barry L | Output circuit with optically coupled control signals |
GB2279524A (en) * | 1993-06-22 | 1995-01-04 | Philips Electronics Uk Ltd | Gate control circuit for power MOSFET |
US8236443B2 (en) | 2002-08-09 | 2012-08-07 | Infinite Power Solutions, Inc. | Metal film encapsulation |
US8021778B2 (en) | 2002-08-09 | 2011-09-20 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
US8445130B2 (en) | 2002-08-09 | 2013-05-21 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
US7993773B2 (en) | 2002-08-09 | 2011-08-09 | Infinite Power Solutions, Inc. | Electrochemical apparatus with barrier layer protected substrate |
US8404376B2 (en) | 2002-08-09 | 2013-03-26 | Infinite Power Solutions, Inc. | Metal film encapsulation |
US20070264564A1 (en) | 2006-03-16 | 2007-11-15 | Infinite Power Solutions, Inc. | Thin film battery on an integrated circuit or circuit board and method thereof |
US8394522B2 (en) | 2002-08-09 | 2013-03-12 | Infinite Power Solutions, Inc. | Robust metal film encapsulation |
US8431264B2 (en) | 2002-08-09 | 2013-04-30 | Infinite Power Solutions, Inc. | Hybrid thin-film battery |
CA2427039C (en) * | 2003-04-29 | 2013-08-13 | Kinectrics Inc. | High speed bi-directional solid state switch |
US8728285B2 (en) | 2003-05-23 | 2014-05-20 | Demaray, Llc | Transparent conductive oxides |
US20050162870A1 (en) * | 2004-01-23 | 2005-07-28 | Hirst B. M. | Power converter |
US20050162139A1 (en) * | 2004-01-23 | 2005-07-28 | Mark Hirst | Alternating current switching circuit |
US8253394B2 (en) * | 2004-02-17 | 2012-08-28 | Hewlett-Packard Development Company, L.P. | Snubber circuit |
DE602005017512D1 (de) | 2004-12-08 | 2009-12-17 | Symmorphix Inc | Abscheidung von licoo2 |
US7959769B2 (en) | 2004-12-08 | 2011-06-14 | Infinite Power Solutions, Inc. | Deposition of LiCoO2 |
US8062708B2 (en) | 2006-09-29 | 2011-11-22 | Infinite Power Solutions, Inc. | Masking of and material constraint for depositing battery layers on flexible substrates |
US8197781B2 (en) | 2006-11-07 | 2012-06-12 | Infinite Power Solutions, Inc. | Sputtering target of Li3PO4 and method for producing same |
US8268488B2 (en) | 2007-12-21 | 2012-09-18 | Infinite Power Solutions, Inc. | Thin film electrolyte for thin film batteries |
TWI441937B (zh) | 2007-12-21 | 2014-06-21 | Infinite Power Solutions Inc | 形成用於電解質薄膜之濺鍍靶材的方法 |
US8518581B2 (en) | 2008-01-11 | 2013-08-27 | Inifinite Power Solutions, Inc. | Thin film encapsulation for thin film batteries and other devices |
CN101983469B (zh) | 2008-04-02 | 2014-06-04 | 无穷动力解决方案股份有限公司 | 与能量采集关联的储能装置的无源过电压/欠电压控制和保护 |
US8906523B2 (en) * | 2008-08-11 | 2014-12-09 | Infinite Power Solutions, Inc. | Energy device with integral collector surface for electromagnetic energy harvesting and method thereof |
JP5294903B2 (ja) * | 2008-08-21 | 2013-09-18 | パナソニック株式会社 | 負荷制御装置及びそれを備えた負荷制御システム |
WO2010030743A1 (en) | 2008-09-12 | 2010-03-18 | Infinite Power Solutions, Inc. | Energy device with integral conductive surface for data communication via electromagnetic energy and method thereof |
US8508193B2 (en) | 2008-10-08 | 2013-08-13 | Infinite Power Solutions, Inc. | Environmentally-powered wireless sensor module |
US8599572B2 (en) | 2009-09-01 | 2013-12-03 | Infinite Power Solutions, Inc. | Printed circuit board with integrated thin film battery |
CN102947976B (zh) | 2010-06-07 | 2018-03-16 | 萨普拉斯特研究有限责任公司 | 可充电、高密度的电化学设备 |
WO2012169401A1 (ja) | 2011-06-06 | 2012-12-13 | オプテックス株式会社 | 直流絶縁型の半導体リレー装置 |
US20130032854A1 (en) * | 2011-08-01 | 2013-02-07 | Lui Chao-Cheng | Rectirier |
KR101896412B1 (ko) * | 2011-08-01 | 2018-09-07 | 페어차일드코리아반도체 주식회사 | 폴리 실리콘 저항, 이를 포함하는 기준 전압 회로, 및 폴리 실리콘 저항 제조 방법 |
DE102015211625A1 (de) | 2015-06-23 | 2016-12-29 | Phoenix Contact Gmbh & Co. Kg | Reversible elektronische Schutzschalterklemme |
US9935630B2 (en) * | 2015-09-18 | 2018-04-03 | Monolithic Power Systems, Inc. | AC switch circuit and associated control method |
KR102504997B1 (ko) * | 2016-05-07 | 2023-02-28 | 인테레솔, 엘엘씨 | 고체 상태의 라인 장애 회로 차단기 |
EP3455938B1 (en) * | 2016-05-12 | 2023-06-28 | Intelesol, LLC | Electronic switch and dimmer |
EP3533141B1 (en) * | 2016-10-28 | 2024-04-24 | Intelesol, LLC | Load identifying ac power supply with control and methods |
US10819336B2 (en) * | 2017-12-28 | 2020-10-27 | Intelesol, Llc | Electronic switch and dimmer |
US11671029B2 (en) | 2018-07-07 | 2023-06-06 | Intelesol, Llc | AC to DC converters |
US11581725B2 (en) | 2018-07-07 | 2023-02-14 | Intelesol, Llc | Solid-state power interrupters |
US11056981B2 (en) | 2018-07-07 | 2021-07-06 | Intelesol, Llc | Method and apparatus for signal extraction with sample and hold and release |
US11197153B2 (en) | 2018-09-27 | 2021-12-07 | Amber Solutions, Inc. | Privacy control and enhancements for distributed networks |
US11334388B2 (en) | 2018-09-27 | 2022-05-17 | Amber Solutions, Inc. | Infrastructure support to enhance resource-constrained device capabilities |
US11205011B2 (en) | 2018-09-27 | 2021-12-21 | Amber Solutions, Inc. | Privacy and the management of permissions |
US10985548B2 (en) | 2018-10-01 | 2021-04-20 | Intelesol, Llc | Circuit interrupter with optical connection |
US11349296B2 (en) | 2018-10-01 | 2022-05-31 | Intelesol, Llc | Solid-state circuit interrupters |
JP7475351B2 (ja) | 2018-12-17 | 2024-04-26 | インテレソール エルエルシー | Ac駆動型の発光ダイオードシステム |
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CN115461629A (zh) | 2020-01-21 | 2022-12-09 | 安泊半导体公司 | 智能电路中断 |
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JPS57192129A (en) * | 1981-05-21 | 1982-11-26 | Omron Tateisi Electronics Co | Semiconductor relay |
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JPS61121729A (ja) * | 1984-11-14 | 1986-06-09 | Fanuc Ltd | 液冷モ−タ |
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JPS6356731A (ja) * | 1986-08-27 | 1988-03-11 | Mitsubishi Electric Corp | デ−タ処理装置 |
IT1217104B (it) * | 1987-03-03 | 1990-03-14 | Sgs Microelettronica Spa | Circuito integrato cmos a due alimentazioni con un transistore mos integrato di protezione contro il <<latch-up>>. |
-
1989
- 1989-04-24 US US07/341,881 patent/US5006737A/en not_active Expired - Lifetime
-
1990
- 1990-04-10 JP JP2094932A patent/JPH02297614A/ja active Pending
- 1990-04-17 EP EP19900107236 patent/EP0398026A3/en not_active Withdrawn
- 1990-04-20 KR KR1019900005542A patent/KR900017297A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US5006737A (en) | 1991-04-09 |
EP0398026A2 (en) | 1990-11-22 |
EP0398026A3 (en) | 1991-11-13 |
JPH02297614A (ja) | 1990-12-10 |
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WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |