JPS57192129A - Semiconductor relay - Google Patents

Semiconductor relay

Info

Publication number
JPS57192129A
JPS57192129A JP56076862A JP7686281A JPS57192129A JP S57192129 A JPS57192129 A JP S57192129A JP 56076862 A JP56076862 A JP 56076862A JP 7686281 A JP7686281 A JP 7686281A JP S57192129 A JPS57192129 A JP S57192129A
Authority
JP
Japan
Prior art keywords
photocell
voltage
mosfet
led
terminals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56076862A
Other languages
Japanese (ja)
Inventor
Kazuaki Urasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Tateisi Electronics Co
Omron Tateisi Electronics Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tateisi Electronics Co, Omron Tateisi Electronics Co filed Critical Tateisi Electronics Co
Priority to JP56076862A priority Critical patent/JPS57192129A/en
Publication of JPS57192129A publication Critical patent/JPS57192129A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K2017/6875—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors using self-conductive, depletion FETs

Landscapes

  • Electronic Switches (AREA)

Abstract

PURPOSE:To switch both of AC and DC, by the costitution that a load circuit is switched with an MOSFET, through the provision of an LED, a photocell, the MOSFET and a high resistance element. CONSTITUTION:When a voltage is applied between driving terminals 1 and 2, an LED 5 emits light and generates a prescribed voltage between output terminals of a photocell 7 through the reception of this light. Thus, the conductive resistace of a high resistance element 8 is set to a very large value. Thus, an MOSFET 6 is conductive through the reception of an output voltage of the photocell 7 to form a close circuit via an external AC power supply 9 and a load reistor 10. When a voltage between the terminals 1 and 2 is eliminated, the LED 5 is distinguished and the output voltage of the photocell 7 is zero. When the output voltage of the photocell 7 is zero, the condutive resistance of the element 8 is very small. As a result, charges stored in the gate of the FET 6 are rapidly discharged via the element 8 and the FET 6 is instantly interrupted.
JP56076862A 1981-05-21 1981-05-21 Semiconductor relay Pending JPS57192129A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56076862A JPS57192129A (en) 1981-05-21 1981-05-21 Semiconductor relay

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56076862A JPS57192129A (en) 1981-05-21 1981-05-21 Semiconductor relay

Publications (1)

Publication Number Publication Date
JPS57192129A true JPS57192129A (en) 1982-11-26

Family

ID=13617453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56076862A Pending JPS57192129A (en) 1981-05-21 1981-05-21 Semiconductor relay

Country Status (1)

Country Link
JP (1) JPS57192129A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170322A (en) * 1984-01-23 1985-09-03 インターナショナル・レクチフアイヤー・コーポレーション Solid element relay circuit
JPS6367015A (en) * 1986-09-09 1988-03-25 Sanyuu Kogyo Kk Solid-state relay
JPS6399616A (en) * 1986-03-24 1988-04-30 Matsushita Electric Works Ltd Solid-state relay and its manufacture
EP0304951A2 (en) * 1987-08-28 1989-03-01 Siemens Aktiengesellschaft Optical coupler
JPS6479999A (en) * 1987-09-22 1989-03-24 Takamisawa Cybernetics Sample and hold circuit
JPS6486398A (en) * 1987-09-28 1989-03-31 Takamisawa Cybernetics Sample-and-hold circuit
US4901946A (en) * 1988-02-12 1990-02-20 Thomson-Brandt Armements System for carrier guidance by laser beam and pyrotechnic thrusters
EP0398026A2 (en) * 1989-04-24 1990-11-22 Motorola, Inc. Semiconductor AC switch
JP2016062686A (en) * 2014-09-16 2016-04-25 三菱電機株式会社 LED lighting device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5115368A (en) * 1974-07-29 1976-02-06 Hitachi Ltd
JPS5530292A (en) * 1978-03-23 1980-03-04 Western Electric Co Photosensitive switch

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5115368A (en) * 1974-07-29 1976-02-06 Hitachi Ltd
JPS5530292A (en) * 1978-03-23 1980-03-04 Western Electric Co Photosensitive switch

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170322A (en) * 1984-01-23 1985-09-03 インターナショナル・レクチフアイヤー・コーポレーション Solid element relay circuit
JPS6399616A (en) * 1986-03-24 1988-04-30 Matsushita Electric Works Ltd Solid-state relay and its manufacture
JPH0478210B2 (en) * 1986-03-24 1992-12-10 Matsushita Electric Works Ltd
JPS6367015A (en) * 1986-09-09 1988-03-25 Sanyuu Kogyo Kk Solid-state relay
EP0304951A2 (en) * 1987-08-28 1989-03-01 Siemens Aktiengesellschaft Optical coupler
JPS6479999A (en) * 1987-09-22 1989-03-24 Takamisawa Cybernetics Sample and hold circuit
JPS6486398A (en) * 1987-09-28 1989-03-31 Takamisawa Cybernetics Sample-and-hold circuit
US4901946A (en) * 1988-02-12 1990-02-20 Thomson-Brandt Armements System for carrier guidance by laser beam and pyrotechnic thrusters
EP0398026A2 (en) * 1989-04-24 1990-11-22 Motorola, Inc. Semiconductor AC switch
EP0398026A3 (en) * 1989-04-24 1991-11-13 Motorola, Inc. Semiconductor ac switch
JP2016062686A (en) * 2014-09-16 2016-04-25 三菱電機株式会社 LED lighting device

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