KR900012381A - 고체 상태 전기화학 셀 - Google Patents
고체 상태 전기화학 셀 Download PDFInfo
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- KR900012381A KR900012381A KR1019900000792A KR900000792A KR900012381A KR 900012381 A KR900012381 A KR 900012381A KR 1019900000792 A KR1019900000792 A KR 1019900000792A KR 900000792 A KR900000792 A KR 900000792A KR 900012381 A KR900012381 A KR 900012381A
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- South Korea
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/48—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
- H01M4/483—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides for non-aqueous cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/054—Accumulators with insertion or intercalation of metals other than lithium, e.g. with magnesium or aluminium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/056—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
- H01M10/0561—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes the electrolyte being constituted of inorganic materials only
- H01M10/0562—Solid materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/48—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
- H01M4/54—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of silver
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/58—Selection of substances as active materials, active masses, active liquids of inorganic compounds other than oxides or hydroxides, e.g. sulfides, selenides, tellurides, halogenides or LiCoFy; of polyanionic structures, e.g. phosphates, silicates or borates
- H01M4/5825—Oxygenated metallic salts or polyanionic structures, e.g. borates, phosphates, silicates, olivines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/34—Material includes an oxide or a nitride
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제6도는 본 발명의 실시예 2에서 얻어진 고체상태 전기화학 셀의 충방전 특성 그래프. 제7도 및 제8도는 본 발명의 실시예 3에서 얻어진 고체상태 전기화학 셀의 충방전 특성 그래프. 제9도는 정정용량과 본 발명의 실시예 9에서 얻어진 고체상태 전기화학 셀의 단자전압 사이의 관계를 나타낸 그래프. 제10도는 본 발명의 실시예 9에서 얻어진 고체상태 전기화학 셀의 충방전 특성 그래프.
Claims (13)
- 적어도 한쌍의 전극과 이 전극들 사이에 배치된 은이온 전도의 고체 전해질층으로 이루어진 고체상태의 전기화학 셀에 있어서, 상기 전극들중 적어도 한 전극이 전극활성물로써 은과 산화천이금속으로 구성된 산화화합물을 포함한 것을 특징으로 하는 고체상태 전기화학 셀.
- 제1항에 있어서, 상기 산화천이금속이 산화 바나듐으로 이루어진 것을 특징으로 하는 셀.
- 제1항에 있어서, 상기 산화 화합물이 식 AgxV2O5-y의(여기서 x<0.35이고, 0y〈 5)인 것을 특징으로 하는 셀.
- 제1항에 있어서, 고체상태의 재충전 가능한 배터리로써 이용되고, 상기 한쌍의 전극들이 상기 배터리를 위한 양전극 및음전극이며, 상기 양전극과 음전극중 적어도 하나가 식AgxV₂O5-y의(여기서, 0.6x0.8 이고 0y〈5)의 산화화합물을 포함한 것을 특징으로 하는 셀.
- 제4항에 있어서, 상기 양전극이 식AgxV2O5-w의(여기에서 0.6x0.8 이고 0y〈5)의 산화화합물을 포함하고, 상기 음전극이 식 AgxV2O5-w(여기서, 0.6x0.8 이고 0w〈5)의 산화화합물을 포함한 것을 특징으로 하는 셀.
- 제5항에 있어서, 상기 양전극이 AgxV2O5-y의 M몰을 포함하고 상기 음전극이 AgxV2O5-w의 N몰을 포함할 때 조건 Q1 Q2가 만족되는 것을 특징으로 하는 셀(여기서 0.6x0.7일때 Q1=M(1.4x-0.55), 0.7x0.8일때 Q1=M(0.6x+0.01): 0.6v0.8일때 Q2=N(-0.6+0.66)임).
- 제1항에 있어서, 고체상태의 아날로그 메모리 셀로써 이용되고, 상기한쌍의 전극이 상기 메모리셀을 위한 작업전극과 카운터 전극이며, 상기 작업전극과 카운터전극중 적어도 하나가 식 AgxV2O5-y의(여기서 x〉0.35이고 0y〈5)의 산화화합물을 포함한 것을 특징으로 하는 셀.
- 제7항에 있어서, 상기 작업전극이 식 AgxV2O5-y의(여기서 x〉0.35이고 0y〈5)의 산화화합물을 포함하고, 상기 카운터 전극이 식AgxV2O5-w(여기서 v〉0.35이고 0w5)의 산화화합물을 포함한 것을 특징으로 하는 셀.
- 제8항에 있어서, 상기 작업전극이 AgxV2O5-y의의 M몰을 포함하고 카운터 전극이 AgxV2O5-w의의 N몰을 포함할 때 조건 Q1 Q2가 만족되는 것을 특징으로 하는 셀 (여기서 x〉0.35이고 Q=M(0.7x-0.28) 0.35v0.7일때 Q2=N(0.6v-0.18), v0.7일때 Q2=N(-0.6v+0.66)임.)
- 제7항에 있어서, 상기 작업전극이 식AgxV2O5-y(여기서 x<0.35이고 0y〈5)의 산화화합물을 포함하고 상기 카운터 전극이 은금속을 포함한 것을 특징으로 하는 셀.
- 제7항에 있어서, 상기 작업전극이 식AgxV2O5-y(여기서 0.32x<0.8이고 0y〈5)인 것을 특징으로 하는 셀.
- 제1항에 있어서, 상기 은이온 전도성의 고체전해질층이 aAgX-bAg2O7cMkOℓ로 구성된 것을 특징으로 하는 셀 (여기서 x는 I, Br, Cl로 구성되는 군으로부터 선정되고; M은 W, Mo, Si, V, Cr, P, B)로 구성되는 군으로 부터 선정되며, 0.1a/(a+b+c)0.1과 2/7k/ℓ2/3의 관계가 충족됨).
- 제1항에 있어서, 상기 은이온 전도성의 고체전해질층이 pAgX-qAgMmOn으로 구성된 것을 특징으로 하는 셀(여기서 X는 I, Br, Cl로 구성되는 군으로부터 선정되고, M은 W, Mo, Si, V, Cr, P, B로 구성되는 군으로 선정되며; 0.1p/(p+q)1.0과 1/5m/n2/3의 관계가 충족됨).※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP89-15317 | 1989-01-24 | ||
JP1015317A JPH0644492B2 (ja) | 1989-01-24 | 1989-01-24 | 電気化学素子 |
JP1067063A JPH0640495B2 (ja) | 1989-03-17 | 1989-03-17 | 全固体二次電池 |
JP89-67063 | 1989-03-27 | ||
JP89-147897 | 1989-06-09 | ||
JP1147897A JPH0766830B2 (ja) | 1989-06-09 | 1989-06-09 | 情報記憶素子 |
JP89-216346 | 1989-08-23 | ||
JP1216346A JPH0769354B2 (ja) | 1989-08-23 | 1989-08-23 | 電気量記憶素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR900012381A true KR900012381A (ko) | 1990-08-04 |
KR920010424B1 KR920010424B1 (ko) | 1992-11-27 |
Family
ID=27456357
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019900000792A KR920010424B1 (ko) | 1989-01-24 | 1990-01-24 | 고체 상태 전기화학 셀 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4965151A (ko) |
EP (1) | EP0380058B1 (ko) |
KR (1) | KR920010424B1 (ko) |
DE (1) | DE69018279T2 (ko) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0434863A (ja) * | 1990-05-29 | 1992-02-05 | Matsushita Electric Ind Co Ltd | 全固体電圧記憶素子 |
US5047899A (en) * | 1990-08-03 | 1991-09-10 | Quadri Electronics Corporation | Solid electrolyte capacitor and method of making |
US5221453A (en) * | 1990-09-27 | 1993-06-22 | Medtronic, Inc. | Silver vanadium oxide cathode material and method of preparation |
US5389472A (en) * | 1993-06-03 | 1995-02-14 | Wilson Greatbatch Ltd. | Preparation of silver vanadium oxide cathodes using AG (O) and V2 O5 as starting materials |
US5716422A (en) * | 1996-03-25 | 1998-02-10 | Wilson Greatbatch Ltd. | Thermal spray deposited electrode component and method of manufacture |
US5955218A (en) * | 1996-12-18 | 1999-09-21 | Medtronic, Inc. | Heat-treated silver vanadium oxide for use in batteries for implantable medical devices |
US5895733A (en) * | 1997-02-03 | 1999-04-20 | Medtronic, Inc. | Synthesis method for silver vanadium oxide |
CA2199446A1 (fr) * | 1997-03-07 | 1998-09-07 | Yves Choquette | Generateurs a electrolyte polymere possedant un sel de potassium permettant de stabiliser les performances et la vie utile de la batterie |
USRE37805E1 (en) * | 1997-03-12 | 2002-07-23 | Hydro-Quebec | Polymer electrolyte lithium battery containing a potassium salt |
US6114069A (en) * | 1997-03-12 | 2000-09-05 | Hydro Quebec | Polymer electrolyte lithium battery containing a potassium salt |
EP0880187B1 (en) * | 1997-05-22 | 2004-11-24 | Matsushita Electric Industrial Co., Ltd. | Non-aqueous electrolyte secondary battery |
DE19851786A1 (de) * | 1998-11-10 | 2000-05-11 | Basf Ag | Silber- und Vanadiumoxid enthaltendes Multimetalloxid und dessen Verwendung |
US6803147B2 (en) | 2000-12-28 | 2004-10-12 | Wilson Greatbatch Technologies, Inc. | Silver vanadium oxide having low internal resistance and method of manufacture |
JP3688595B2 (ja) | 2001-03-30 | 2005-08-31 | 株式会社東芝 | ディスク記憶装置及びスピンドルモータの駆動制御方法 |
US6872490B2 (en) | 2001-08-09 | 2005-03-29 | Wilson Greatbatch Technologies, Inc. | Preparation for a cathode material by a two-step reduction/oxidation synthesis process |
US20100185264A1 (en) * | 2002-01-24 | 2010-07-22 | Greatbatch Ltd. | Method For Coating A Cathode Active Material With A Metal Oxide For Incorporation Into A Lithium Electrochemical Cell |
US7211349B2 (en) | 2002-08-06 | 2007-05-01 | Wilson Greatbatch Technologies, Inc. | Silver vanadium oxide provided with a metal oxide coating |
US7253494B2 (en) * | 2003-04-04 | 2007-08-07 | Matsushita Electric Industrial Co., Ltd. | Battery mounted integrated circuit device having diffusion layers that prevent cations serving to charge and discharge battery from diffusing into the integrated circuit region |
FR2905028B1 (fr) * | 2006-08-21 | 2008-12-19 | Commissariat Energie Atomique | Dispositif de memoire electrochimique |
JP2008059955A (ja) * | 2006-08-31 | 2008-03-13 | Kokusai Kiban Zairyo Kenkyusho:Kk | 二次電池およびその製造方法 |
JP4201035B2 (ja) * | 2006-09-05 | 2008-12-24 | セイコーエプソン株式会社 | 電池素子および電子機器 |
JP4612664B2 (ja) * | 2007-09-25 | 2011-01-12 | セイコーエプソン株式会社 | 全固体二次電池、全固体二次電池の製造方法 |
FR2928768B1 (fr) * | 2008-03-13 | 2010-04-09 | Commissariat Energie Atomique | Dispositif de memoire electrochimique non-volatile |
US10396394B2 (en) * | 2016-01-12 | 2019-08-27 | Toyota Jidosha Kabushiki Kaisha | Method for producing sulfide all-solid-state battery and sulfide all-solid-state battery |
US10957937B2 (en) | 2019-03-07 | 2021-03-23 | International Business Machines Corporation | Three-terminal copper-driven neuromorphic device |
US11674829B2 (en) * | 2019-12-23 | 2023-06-13 | Palo Alto Research Center Incorporated | Low-power sensor memory |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7603185A (nl) * | 1975-04-30 | 1976-11-02 | Max Planck Gesellschaft | Elektrische elementen en werkwijze voor de ver- vaardiging daarvan. |
US4237204A (en) * | 1979-10-29 | 1980-12-02 | Exxon Research & Engineering Co. | Molybdenum sulfide cathode structure |
JPS60101868A (ja) * | 1983-11-08 | 1985-06-05 | Fuji Elelctrochem Co Ltd | アルカリ二次電池 |
JPS60127662A (ja) * | 1983-12-14 | 1985-07-08 | Res Inst For Prod Dev | 電池陽極材用原料の製造法 |
US4830940A (en) * | 1986-01-14 | 1989-05-16 | Wilson Greatbatch Ltd. | Non-agueous lithium battery |
US4789610A (en) * | 1986-11-06 | 1988-12-06 | Matsushita Electric Industrial Co., Ltd. | Solid-electrolyte secondary cell |
-
1990
- 1990-01-23 DE DE69018279T patent/DE69018279T2/de not_active Expired - Fee Related
- 1990-01-23 US US07/468,555 patent/US4965151A/en not_active Expired - Lifetime
- 1990-01-23 EP EP90101322A patent/EP0380058B1/en not_active Expired - Lifetime
- 1990-01-24 KR KR1019900000792A patent/KR920010424B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE69018279D1 (de) | 1995-05-11 |
EP0380058A2 (en) | 1990-08-01 |
EP0380058B1 (en) | 1995-04-05 |
DE69018279T2 (de) | 1995-08-17 |
EP0380058A3 (en) | 1991-05-29 |
KR920010424B1 (ko) | 1992-11-27 |
US4965151A (en) | 1990-10-23 |
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