KR900003875B1 - 소거가능 프로그래머블 판독전용 메모리장치 및 그의 제조방법 - Google Patents

소거가능 프로그래머블 판독전용 메모리장치 및 그의 제조방법 Download PDF

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Publication number
KR900003875B1
KR900003875B1 KR1019870000077A KR870000077A KR900003875B1 KR 900003875 B1 KR900003875 B1 KR 900003875B1 KR 1019870000077 A KR1019870000077 A KR 1019870000077A KR 870000077 A KR870000077 A KR 870000077A KR 900003875 B1 KR900003875 B1 KR 900003875B1
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South Korea
Prior art keywords
gate
substrate
floating gate
memory cell
insulating film
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KR1019870000077A
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Korean (ko)
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KR870007571A (ko
Inventor
신지 스가따니
Original Assignee
후지쓰가부시끼가이샤
야마모도 다꾸마
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Publication of KR870007571A publication Critical patent/KR870007571A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
KR1019870000077A 1986-01-14 1987-01-08 소거가능 프로그래머블 판독전용 메모리장치 및 그의 제조방법 Expired KR900003875B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61-005310 1986-01-14
JP61-5310 1986-01-14
JP61005310A JPS62163376A (ja) 1986-01-14 1986-01-14 半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
KR870007571A KR870007571A (ko) 1987-08-20
KR900003875B1 true KR900003875B1 (ko) 1990-06-02

Family

ID=11607698

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870000077A Expired KR900003875B1 (ko) 1986-01-14 1987-01-08 소거가능 프로그래머블 판독전용 메모리장치 및 그의 제조방법

Country Status (5)

Country Link
US (1) US4734887A (enExample)
EP (1) EP0236676B1 (enExample)
JP (1) JPS62163376A (enExample)
KR (1) KR900003875B1 (enExample)
DE (1) DE3780484T2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2616576B1 (fr) * 1987-06-12 1992-09-18 Commissariat Energie Atomique Cellule de memoire eprom et son procede de fabrication
JP2618946B2 (ja) * 1987-12-28 1997-06-11 株式会社東芝 不揮発性半導体メモリ装置の製造方法
US5143860A (en) * 1987-12-23 1992-09-01 Texas Instruments Incorporated High density EPROM fabricaiton method having sidewall floating gates
JP2780715B2 (ja) * 1988-03-04 1998-07-30 ソニー株式会社 半導体装置の製造方法
US5268318A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
FR2633455B1 (fr) * 1988-06-24 1990-08-24 Thomson Csf Matrice photosensible a transfert de trame d.t.c., avec un systeme antieblouissement vertical, et procede de fabrication d'une telle matrice
JPH0265175A (ja) * 1988-08-31 1990-03-05 Toshiba Corp 半導体不揮発性記憶装置及びその製造方法
US5296396A (en) * 1988-12-05 1994-03-22 Sgs-Thomson Microelectronics S.R.L. Matrix of EPROM memory cells with a tablecloth structure having an improved capacitative ratio and a process for its manufacture
IT1227989B (it) * 1988-12-05 1991-05-20 Sgs Thomson Microelectronics Matrice di celle di memoria eprom con struttura a tovaglia con migliorato rapporto capacitivo e processo per la sua fabbricazione
JPH0821638B2 (ja) * 1989-12-15 1996-03-04 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
JPH088316B2 (ja) * 1990-01-31 1996-01-29 株式会社東芝 紫外線消去型不揮発性半導体メモリ装置
JPH088317B2 (ja) * 1990-04-24 1996-01-29 株式会社東芝 半導体記憶装置及びその製造方法
US5057447A (en) * 1990-07-09 1991-10-15 Texas Instruments Incorporated Silicide/metal floating gate process
KR970000533B1 (ko) * 1990-12-20 1997-01-13 후지쓰 가부시끼가이샤 Eprom 및 그 제조방법
JP3160966B2 (ja) * 1991-10-16 2001-04-25 ソニー株式会社 Ｓｏｉ基板の製造方法
DE69226687T2 (de) * 1991-10-16 1999-04-15 Sony Corp., Tokio/Tokyo Verfahren zur Herstellung einer SOI-Struktur mit einem DRAM
KR100215840B1 (ko) * 1996-02-28 1999-08-16 구본준 반도체 메모리셀 구조 및 제조방법
JP3583579B2 (ja) 1997-06-06 2004-11-04 株式会社東芝 不揮発性半導体記憶装置およびその製造方法
DE19926500C2 (de) * 1999-06-10 2001-09-20 Infineon Technologies Ag Nichtflüchtige Halbleiter-Speicherzelle mit einer eine hohe relative Dielektrizitätskonstante aufweisenden dielektrischen Schicht und Verfahren zu deren Herstellung
US6744094B2 (en) 2001-08-24 2004-06-01 Micron Technology Inc. Floating gate transistor with horizontal gate layers stacked next to vertical body
US7288821B2 (en) * 2005-04-08 2007-10-30 International Business Machines Corporation Structure and method of three dimensional hybrid orientation technology

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4258466A (en) * 1978-11-02 1981-03-31 Texas Instruments Incorporated High density electrically programmable ROM
JPS5929155B2 (ja) * 1979-11-12 1984-07-18 富士通株式会社 半導体記憶装置
US4493057A (en) * 1980-01-07 1985-01-08 Texas Instruments Incorporated Method of making high density semiconductor device such as floating gate electrically programmable ROM or the like
JPS5742169A (en) * 1980-08-26 1982-03-09 Toshiba Corp Production of semiconductor device
JPS59111370A (ja) * 1982-12-16 1984-06-27 Seiko Instr & Electronics Ltd 不揮発性半導体メモリ
JPS59178773A (ja) * 1983-03-30 1984-10-11 Toshiba Corp 半導体装置の製造方法
US4618876A (en) * 1984-07-23 1986-10-21 Rca Corporation Electrically alterable, nonvolatile floating gate memory device
JPH0722195B2 (ja) * 1985-08-20 1995-03-08 日本電気株式会社 不揮発性半導体記憶装置の製造方法

Also Published As

Publication number Publication date
KR870007571A (ko) 1987-08-20
EP0236676A3 (en) 1989-11-02
DE3780484D1 (de) 1992-08-27
EP0236676A2 (en) 1987-09-16
US4734887A (en) 1988-03-29
JPS62163376A (ja) 1987-07-20
DE3780484T2 (de) 1993-01-21
EP0236676B1 (en) 1992-07-22
JPH0560671B2 (enExample) 1993-09-02

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