KR900003030B1 - Programmable device for semiconductor integrated cricuit - Google Patents

Programmable device for semiconductor integrated cricuit

Info

Publication number
KR900003030B1
KR900003030B1 KR8609946A KR860009946A KR900003030B1 KR 900003030 B1 KR900003030 B1 KR 900003030B1 KR 8609946 A KR8609946 A KR 8609946A KR 860009946 A KR860009946 A KR 860009946A KR 900003030 B1 KR900003030 B1 KR 900003030B1
Authority
KR
South Korea
Prior art keywords
semiconductor integrated
programmable device
cricuit
electrode layer
dielectric films
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR8609946A
Other languages
English (en)
Korean (ko)
Inventor
Noriaki Soto
Dakahiro Nawata
Kunihiko Wada
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of KR900003030B1 publication Critical patent/KR900003030B1/ko
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/04—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using capacitive elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/49—Adaptable interconnections, e.g. fuses or antifuses
    • H10W20/491—Antifuses, i.e. interconnections changeable from non-conductive to conductive

Landscapes

  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Read Only Memory (AREA)
KR8609946A 1985-11-29 1986-11-25 Programmable device for semiconductor integrated cricuit Expired KR900003030B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60268539A JPS62128556A (ja) 1985-11-29 1985-11-29 半導体装置

Publications (1)

Publication Number Publication Date
KR900003030B1 true KR900003030B1 (en) 1990-05-04

Family

ID=17459928

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8609946A Expired KR900003030B1 (en) 1985-11-29 1986-11-25 Programmable device for semiconductor integrated cricuit

Country Status (4)

Country Link
EP (1) EP0224418B1 (https=)
JP (1) JPS62128556A (https=)
KR (1) KR900003030B1 (https=)
DE (1) DE3677155D1 (https=)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4823181A (en) * 1986-05-09 1989-04-18 Actel Corporation Programmable low impedance anti-fuse element
US4899205A (en) * 1986-05-09 1990-02-06 Actel Corporation Electrically-programmable low-impedance anti-fuse element
US5266829A (en) * 1986-05-09 1993-11-30 Actel Corporation Electrically-programmable low-impedance anti-fuse element
US5075249A (en) * 1988-04-04 1991-12-24 Fujitsu Limited Method of making a bic memory cell having contact openings with straight sidewalls and sharp-edge rims
US5354695A (en) 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
JP2535084B2 (ja) * 1990-02-19 1996-09-18 シャープ株式会社 半導体装置の製造方法
US5780323A (en) 1990-04-12 1998-07-14 Actel Corporation Fabrication method for metal-to-metal antifuses incorporating a tungsten via plug
US5614756A (en) 1990-04-12 1997-03-25 Actel Corporation Metal-to-metal antifuse with conductive
US5552627A (en) * 1990-04-12 1996-09-03 Actel Corporation Electrically programmable antifuse incorporating dielectric and amorphous silicon interlayers
US5273927A (en) * 1990-12-03 1993-12-28 Micron Technology, Inc. Method of making a ferroelectric capacitor and forming local interconnect
US5119154A (en) * 1990-12-03 1992-06-02 Micron Technology, Inc. Ferroelectric capacitor and method for forming local interconnect
US5625220A (en) * 1991-02-19 1997-04-29 Texas Instruments Incorporated Sublithographic antifuse
US6714625B1 (en) 1992-04-08 2004-03-30 Elm Technology Corporation Lithography device for semiconductor circuit pattern generation
JP2783398B2 (ja) * 1992-09-09 1998-08-06 マイクロン・テクノロジー・インコーポレイテッド それぞれアンチ・ヒューズ素子を通じて基準電圧線に接続されたメモリー・セルｉｇｆｅｔを有するワン・タイム電圧プログラマブル・リード・オンリー・メモリー・アレイ
US5550404A (en) * 1993-05-20 1996-08-27 Actel Corporation Electrically programmable antifuse having stair aperture
BE1007591A3 (nl) * 1993-10-05 1995-08-16 Philips Electronics Nv Programmeerbare halfgeleiderinrichting alsmede programmeerbaar halfgeleidergeheugen omvattende een dergelijke halfgeleiderinrichting.
US5756367A (en) * 1994-11-07 1998-05-26 Advanced Micro Devices, Inc. Method of making a spacer based antifuse structure for low capacitance and high reliability
US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
WO2004015764A2 (en) 2002-08-08 2004-02-19 Leedy Glenn J Vertical system integration
US7977669B2 (en) 2005-02-10 2011-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device having a liquid-repellent layer
CN100546034C (zh) * 2005-02-10 2009-09-30 株式会社半导体能源研究所 半导体装置及其制造方法
US8193606B2 (en) 2005-02-28 2012-06-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a memory element

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576549A (en) * 1969-04-14 1971-04-27 Cogar Corp Semiconductor device, method, and memory array
US3793090A (en) * 1972-11-21 1974-02-19 Ibm Method for stabilizing fet devices having silicon gates and composite nitride-oxide gate dielectrics
JPS5326462A (en) * 1976-08-24 1978-03-11 Kurita Water Ind Ltd Apparatus for treatment of floating separation
JPS5823483A (ja) * 1981-08-05 1983-02-12 Agency Of Ind Science & Technol 不揮発性半導体メモリ
JPS5828750A (ja) * 1981-08-12 1983-02-19 Canon Inc 光導電部材
JPS60153158A (ja) * 1984-01-23 1985-08-12 Oki Electric Ind Co Ltd キャパシタ誘電体膜の製造方法
JPH0652781B2 (ja) * 1984-02-06 1994-07-06 日本電信電話株式会社 電気的書込み可能な読出し専用メモリ素子の製造方法

Also Published As

Publication number Publication date
JPS62128556A (ja) 1987-06-10
JPH0439232B2 (https=) 1992-06-26
EP0224418A1 (en) 1987-06-03
DE3677155D1 (de) 1991-02-28
EP0224418B1 (en) 1991-01-23

Similar Documents

Publication Publication Date Title
KR900003030B1 (en) Programmable device for semiconductor integrated cricuit
EP0223616A3 (en) Semiconductor memory device and manufacturing method
EP0510604A3 (en) Semiconductor device and method of manufacturing the same
MY115602A (en) Mis transistor varactor device and osillator using same
TW329037B (en) Semiconductor memory device
TW340261B (en) Semiconductor device and the manufacturing method
TW324843B (en) Compound electrode stack capacitor
MY120575A (en) Semiconductor device and method of manufacturing same
EP0952611A3 (en) Semiconductor device
EP0218438A3 (en) Apparatus for mounting a semiconductor chip and making electrical connections thereto
KR900010950A (ko) 기판으로부터 전기절연된 반도체막의 제조방법
EP0122459A3 (en) Semiconductor device comprising a diode and a capacitor
EP0755075A3 (en) A tape carrier package
DE3480247D1 (en) Monolithic integrated semiconductor circuit
KR870005450A (ko) 반도체층을 통한 전기적 단락이 없는 반도체 장치와 그 제조방법
ES8705705A1 (es) Perfeccionamientos en dispositivos semiconductores para aisladores.
JPS5563840A (en) Semiconductor integrated device
DE3572424D1 (en) Thyristor device and process for producing it
EP0252679A3 (en) Semiconductor device having two electrodes with an insulating film between them
JPS57172753A (en) Semiconductor element with low resistance contact projected
EP0348916A3 (en) Mosfet equivalent voltage drive semiconductor device
JPS57100770A (en) Switching element
KR870004490A (ko) 반도체 웨이퍼 브레이크(wafer break)장치
EP0252236A3 (en) Vertical mos type semiconductor device
JPS568854A (en) Package for semiconductor device

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

G160 Decision to publish patent application
PG1605 Publication of application before grant of patent

St.27 status event code: A-2-2-Q10-Q13-nap-PG1605

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 16

FPAY Annual fee payment

Payment date: 20060502

Year of fee payment: 17

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 17

EXPY Expiration of term
PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20061126

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000