KR900000826B1 - 반도체집적회로의 제조방법 - Google Patents

반도체집적회로의 제조방법 Download PDF

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Publication number
KR900000826B1
KR900000826B1 KR1019860002820A KR860002820A KR900000826B1 KR 900000826 B1 KR900000826 B1 KR 900000826B1 KR 1019860002820 A KR1019860002820 A KR 1019860002820A KR 860002820 A KR860002820 A KR 860002820A KR 900000826 B1 KR900000826 B1 KR 900000826B1
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KR
South Korea
Prior art keywords
region
collector
conductive
base
pnp transistor
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Expired
Application number
KR1019860002820A
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English (en)
Korean (ko)
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KR860008620A (ko
Inventor
테루오 다바다
Original Assignee
산요덴끼 가부시기가이샤
이우에 사도시
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Publication of KR860008620A publication Critical patent/KR860008620A/ko
Application granted granted Critical
Publication of KR900000826B1 publication Critical patent/KR900000826B1/ko
Expired legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment

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  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
KR1019860002820A 1985-04-19 1986-04-14 반도체집적회로의 제조방법 Expired KR900000826B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60-84834 1985-04-19
JP60084834A JPS61242062A (ja) 1985-04-19 1985-04-19 半導体集積回路の製造方法

Publications (2)

Publication Number Publication Date
KR860008620A KR860008620A (ko) 1986-11-17
KR900000826B1 true KR900000826B1 (ko) 1990-02-17

Family

ID=13841810

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860002820A Expired KR900000826B1 (ko) 1985-04-19 1986-04-14 반도체집적회로의 제조방법

Country Status (2)

Country Link
JP (1) JPS61242062A (https=)
KR (1) KR900000826B1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63128751A (ja) * 1986-11-19 1988-06-01 Sanyo Electric Co Ltd 縦型ｐｎｐトランジスタ

Also Published As

Publication number Publication date
JPS61242062A (ja) 1986-10-28
JPH0451067B2 (https=) 1992-08-18
KR860008620A (ko) 1986-11-17

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