KR900000206B1 - 전력용 반도체 모듈의 배선구조 - Google Patents
전력용 반도체 모듈의 배선구조 Download PDFInfo
- Publication number
- KR900000206B1 KR900000206B1 KR1019850002304A KR850002304A KR900000206B1 KR 900000206 B1 KR900000206 B1 KR 900000206B1 KR 1019850002304 A KR1019850002304 A KR 1019850002304A KR 850002304 A KR850002304 A KR 850002304A KR 900000206 B1 KR900000206 B1 KR 900000206B1
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- KR
- South Korea
- Prior art keywords
- power semiconductor
- conductive layer
- conductor
- semiconductor module
- wiring structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
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- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
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- H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/915—Active solid-state devices, e.g. transistors, solid-state diodes with titanium nitride portion or region
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Inverter Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59-95113 | 1984-05-11 | ||
| JP59095113A JPS60239051A (ja) | 1984-05-11 | 1984-05-11 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR850008557A KR850008557A (ko) | 1985-12-18 |
| KR900000206B1 true KR900000206B1 (ko) | 1990-01-23 |
Family
ID=14128788
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019850002304A Expired KR900000206B1 (ko) | 1984-05-11 | 1985-04-06 | 전력용 반도체 모듈의 배선구조 |
Country Status (4)
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3604313A1 (de) * | 1986-02-12 | 1987-08-13 | Bbc Brown Boveri & Cie | Leistungshalbleitermodul |
| US4907068A (en) * | 1987-01-21 | 1990-03-06 | Siemens Aktiengesellschaft | Semiconductor arrangement having at least one semiconductor body |
| JPH0740790B2 (ja) * | 1987-02-23 | 1995-05-01 | 株式会社東芝 | 大電力パワ−モジユ−ル |
| IT1202657B (it) * | 1987-03-09 | 1989-02-09 | Sgs Microelettronica Spa | Procedimento di fabbricazione di un dispositivo modulare di potenza a semiconduttore e dispositivo con esso ottenento |
| DE3717489A1 (de) * | 1987-05-23 | 1988-12-01 | Asea Brown Boveri | Leistungshalbleitermodul und verfahren zur herstellung des moduls |
| JPH03106029A (ja) * | 1989-09-20 | 1991-05-02 | Fujitsu Ltd | ウエハ・スケール・ic |
| US5731970A (en) * | 1989-12-22 | 1998-03-24 | Hitachi, Ltd. | Power conversion device and semiconductor module suitable for use in the device |
| US5038197A (en) * | 1990-06-26 | 1991-08-06 | Harris Semiconductor Patents, Inc. | Hermetically sealed die package with floating source |
| NL9101453A (nl) * | 1990-09-10 | 1992-04-01 | Barmag Barmer Maschf | Frequentie-omvormer. |
| DE4105155C2 (de) * | 1991-02-20 | 1994-07-07 | Export Contor Ausenhandelsgese | Stromrichterschaltungsanordnung |
| DE4130160A1 (de) * | 1991-09-11 | 1993-03-25 | Export Contor Aussenhandel | Elektronische schaltung |
| DE69226141T2 (de) * | 1991-09-20 | 1998-12-03 | Hitachi Ltd | Dreiphasiger dreistufiger Wechselrichter |
| JP2882143B2 (ja) * | 1991-12-10 | 1999-04-12 | 富士電機株式会社 | 半導体装置の内部配線構造 |
| JP2973799B2 (ja) * | 1993-04-23 | 1999-11-08 | 富士電機株式会社 | パワートランジスタモジュール |
| US5473193A (en) * | 1994-01-06 | 1995-12-05 | Harris Corporation | Package for parallel subelement semiconductor devices |
| JP2988243B2 (ja) * | 1994-03-16 | 1999-12-13 | 株式会社日立製作所 | パワー混成集積回路装置 |
| DE19522172C1 (de) * | 1995-06-19 | 1996-11-21 | Siemens Ag | Leistungs-Halbleitermodul mit Anschlußstiften |
| US5705848A (en) * | 1995-11-24 | 1998-01-06 | Asea Brown Boveri Ag | Power semiconductor module having a plurality of submodules |
| JP3298520B2 (ja) * | 1998-10-01 | 2002-07-02 | 富士電機株式会社 | 電力変換装置 |
| FR2807209A1 (fr) * | 2000-04-04 | 2001-10-05 | De Gail Marc Lamort | Composant pour la commutation de courants electriques forts |
| US6302709B1 (en) * | 2000-06-05 | 2001-10-16 | Power-One, Inc. | Multiple function high current interconnect with integrated bus bar |
| US20020071293A1 (en) * | 2000-07-13 | 2002-06-13 | Eden Richard C. | Power semiconductor switching devices, power converters, integrated circuit assemblies, integrated circuitry, power current switching methods, methods of forming a power semiconductor switching device, power conversion methods, power semiconductor switching device packaging methods, and methods a of forming power transistor |
| DE10212721A1 (de) * | 2001-03-24 | 2002-09-26 | Marquardt Gmbh | Ansteuereinrichtung für einen Elektromotor |
| US20060006526A1 (en) * | 2004-07-06 | 2006-01-12 | Coronati John M | Thermal interposer for cooled electrical packages |
| US20070165376A1 (en) * | 2006-01-17 | 2007-07-19 | Norbert Bones | Three phase inverter power stage and assembly |
| DE102006004322A1 (de) * | 2006-01-31 | 2007-08-16 | Häusermann GmbH | Leiterplatte mit zusätzlichen funktionalen Elementen sowie Herstellverfahren und Anwendung |
| CN111801795B (zh) * | 2018-09-14 | 2024-11-12 | 富士电机株式会社 | 半导体装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE8203300U1 (de) * | 1982-06-24 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement mit Keramiksubstrat | |
| JPS492455U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1972-04-10 | 1974-01-10 | ||
| DE7512573U (de) * | 1975-04-19 | 1975-09-04 | Semikron Gesellschaft Fuer Gleichri | Halbleitergleichrichteranordnung |
| US4021839A (en) * | 1975-10-16 | 1977-05-03 | Rca Corporation | Diode package |
| DE2642721A1 (de) * | 1976-09-23 | 1978-04-06 | Bosch Gmbh Robert | Halbleiterbauelement |
| DE2819327C2 (de) * | 1978-05-03 | 1984-10-31 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Halbleiterbaueinheit |
| JPS5536915A (en) * | 1978-09-04 | 1980-03-14 | Hitachi Ltd | Electronic circuit and its manufacturing |
| DE3106193A1 (de) * | 1981-02-19 | 1982-09-09 | Siemens AG, 1000 Berlin und 8000 München | Systemtraeger fuer mit kunststoff umhuellte elektrische bauelemente |
| US4518982A (en) * | 1981-02-27 | 1985-05-21 | Motorola, Inc. | High current package with multi-level leads |
| FR2503932A1 (fr) * | 1981-04-08 | 1982-10-15 | Thomson Csf | Boitiers a cosses plates pour composants semi-conducteurs de moyenne puissance et procede de fabrication |
| EP0064856B1 (en) * | 1981-05-12 | 1986-12-30 | LUCAS INDUSTRIES public limited company | A multi-phase bridge arrangement |
| JPS6038867B2 (ja) * | 1981-06-05 | 1985-09-03 | 株式会社日立製作所 | 絶縁型半導体装置 |
| US4514587A (en) * | 1981-12-23 | 1985-04-30 | Unitrode Corporation | High power semiconductor package |
| DE3241508A1 (de) * | 1982-11-10 | 1984-05-10 | Brown, Boveri & Cie Ag, 6800 Mannheim | Leistungstransistor-modul |
| US4538170A (en) * | 1983-01-03 | 1985-08-27 | General Electric Company | Power chip package |
| JPS59181627A (ja) * | 1983-03-31 | 1984-10-16 | Toshiba Corp | 半導体装置の製造方法 |
-
1984
- 1984-05-11 JP JP59095113A patent/JPS60239051A/ja active Pending
-
1985
- 1985-04-06 KR KR1019850002304A patent/KR900000206B1/ko not_active Expired
- 1985-05-10 DE DE19853516995 patent/DE3516995A1/de active Granted
-
1987
- 1987-06-26 US US07/067,388 patent/US5038194A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE3516995A1 (de) | 1985-11-14 |
| DE3516995C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-06-24 |
| KR850008557A (ko) | 1985-12-18 |
| JPS60239051A (ja) | 1985-11-27 |
| US5038194A (en) | 1991-08-06 |
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