KR890016630A - 전력용 반도체장치 - Google Patents
전력용 반도체장치 Download PDFInfo
- Publication number
- KR890016630A KR890016630A KR1019890004603A KR890004603A KR890016630A KR 890016630 A KR890016630 A KR 890016630A KR 1019890004603 A KR1019890004603 A KR 1019890004603A KR 890004603 A KR890004603 A KR 890004603A KR 890016630 A KR890016630 A KR 890016630A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- semiconductor
- power semiconductor
- elements
- power
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 46
- 239000000758 substrate Substances 0.000 claims 5
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 238000002485 combustion reaction Methods 0.000 claims 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/12—Modifications for increasing the maximum permissible switched current
- H03K17/122—Modifications for increasing the maximum permissible switched current in field-effect transistor switches
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 실시예인 전력용 반도체장치의 개략을 나타낸 회로도. 제 4 도(a) 및 (b)는 상기 제1의 반도체장치를 MOS형 트랜지스터로 구성한 경우의 구조를 나타낸 평면도 및 단면도. 제 5 도는 상기 제1도의 반도체장치를 집적회로에 적용하여 일체로 구성한 경우의 회로구성을 나타낸 모식도.
Claims (14)
- 복수개의 반도체소자요소를 동일한 반도체기판상에 전기적으로 병렬로 형성하고 상기 복수의 반도체소자요소의 입출력단을 각각 공통으로 접속하는 입출력단자를 설치하고 상기 복수의 반도체소자요소를 복수의 군으로 분할하고, 이들 복수의 분할된 군을 구성하는 반도체소자요소의 제어단자를 공통으로 접속함과 동시에 상기 복수의 반도체소자요소군에 대응하는 상기 제어단자와 각각 전기적으로 독립되게 형성한 것을 특징으로 하는 전력용 반도체장치.
- 제 1 항에 있어서, 상기 반도체기판상에 형성된 반도체소자요소는 금속산화막 반도체소자인 것을 특징으로 하는 전력용 반도체장치.
- 제 1 항에 있어서, 상기 복수의 군의 반도체소자요소의 전류용량은 다른군의 반도체소자요소의 전류용량과 같은 것을 특징으로 하는 전력용 반도체장치.
- 제 1 항에 있어서, 상기 복수의 각군의 반도체소자요소의 전류용량은 각각 상이한 것을 특징으로 하는 전력용 반도체장치.
- 제 4 항에 있어서, 상기 복수의 군의 반도체소자요소의 전류용량은 각각 1배씩 다른 것을 특징으로 하는 전력용 반도체장치.
- 복수의 반도체소자를 전기적으로 병렬로 접속하고, 이들 반도체소자의 입출력부를 각각 공통으로 접속한 입출력단자를 설치하고 상기 복수의 반도체소자를 복수의 군으로 분할하고 각각의 군을 구성하는 반도체 소자의 제어단자를 공통으로 접속한 복수의 제어단자를 설치하고 다시 상기 복수의 제어단자에 그 출력단자를 접속한 카운터장치를 설치한 것을 특징으로 하는 전력용 반도체장치.
- 제 6 항에 있어서, 상기 분할된 각군의 반도체소자의 전류용량은 상기 카운터장치의 각 출력단자에 대하여 소정의 무게붙임되어 있는 것을 특징으로 하는 전력용 반도체장치.
- 제 7 항에 있어서, 상기 각군의 반도체 소자의 전류용량의 무게붙임을 2n(단 n는 자연수)로 표시되는 관계에 있음을 특징으로 하는 전력용 반도체장치.
- 제 6 항에 있어서, 상기 복수의 반도체소자는 동일한 반도체기판상에 형성되어 있는 것을 특징으로 하는 전력용 반도체장치.
- 제 9 항에 있어서, 상기 카운터장치를 상기 동일한 반도체기판상에 형성한 것을 특징으로 하는 전력용 반도체장치.
- 제 6 항 혹은 제 9 항에 있어서, 상기 반도체소자는 금속산화막 반도체에 의하여 구성되어 있는 것을 특징으로 하는 전력용 반도체장치.
- 제10항에 있어서, 상기 반도체기판상에 메모리회로를 형성하고 상기 카운터장치의 출력단과 상기 반도체소자와의 사이에 상기 메모리회로를 삽입하고 있는 것을 특징으로 하는 전력용 반도체장치.
- 제12항에 있어서, 상기 전력용 반도체장치는 내연기관의 점화신호발생회로의 전류제어장치로서 사용되고 있는 것을 특징으로 하는 전력용 반도체장치.
- 제12항에 있어서, 상기 전력용 반도체장치는 직류전동기의 전류제어장치로서 사용되고 있는 것을 특징으로 하는 전력용 반도체장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63-89082 | 1988-04-13 | ||
JP63089082A JP2656537B2 (ja) | 1988-04-13 | 1988-04-13 | 電力用半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR890016630A true KR890016630A (ko) | 1989-11-29 |
Family
ID=13960939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019890004603A KR890016630A (ko) | 1988-04-13 | 1989-04-07 | 전력용 반도체장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US4977333A (ko) |
EP (1) | EP0337362B1 (ko) |
JP (1) | JP2656537B2 (ko) |
KR (1) | KR890016630A (ko) |
DE (1) | DE68928176T2 (ko) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4122653C2 (de) * | 1991-07-09 | 1996-04-11 | Daimler Benz Ag | Steuerbare Halbleiterschalteinrichtung mit integrierter Strombegrenzung und Übertemperaturabschaltung |
US5691940A (en) * | 1992-10-27 | 1997-11-25 | Texas Instruments Incorporated | Method and apparatus for programmable current limits |
EP0618679A1 (en) * | 1993-03-31 | 1994-10-05 | STMicroelectronics S.r.l. | High reliable integrated circuit structure for MOS power devices |
DE4419006A1 (de) * | 1994-05-31 | 1995-12-07 | Hella Kg Hueck & Co | Pulsweitenmodulierter Schaltwandler zum Betrieb elektrischer Verbraucher |
US5828247A (en) * | 1996-12-09 | 1998-10-27 | Delco Electronics Corporation | Externally multi-configurable output driver |
US6094075A (en) | 1997-08-29 | 2000-07-25 | Rambus Incorporated | Current control technique |
US6870419B1 (en) * | 1997-08-29 | 2005-03-22 | Rambus Inc. | Memory system including a memory device having a controlled output driver characteristic |
US7051130B1 (en) | 1999-10-19 | 2006-05-23 | Rambus Inc. | Integrated circuit device that stores a value representative of a drive strength setting |
US6321282B1 (en) | 1999-10-19 | 2001-11-20 | Rambus Inc. | Apparatus and method for topography dependent signaling |
US6646953B1 (en) | 2000-07-06 | 2003-11-11 | Rambus Inc. | Single-clock, strobeless signaling system |
US7079775B2 (en) | 2001-02-05 | 2006-07-18 | Finisar Corporation | Integrated memory mapped controller circuit for fiber optics transceiver |
US7119549B2 (en) * | 2003-02-25 | 2006-10-10 | Rambus Inc. | Output calibrator with dynamic precision |
US20080007236A1 (en) * | 2006-07-06 | 2008-01-10 | Alan Elbanhawy | Power converter with segmented power module |
DE102009034825A1 (de) * | 2009-07-27 | 2011-02-03 | Kromberg & Schubert Gmbh & Co. Kg | Schalteinrichtung |
EP3107197B1 (en) * | 2015-06-16 | 2022-01-19 | Mitsubishi Electric R&D Centre Europe B.V. | System and method for controlling the operation of a multi-die power module |
US11437989B2 (en) * | 2020-08-04 | 2022-09-06 | Pakal Technologies, Inc | Insulated gate power device with independently controlled segments |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5512239A (en) * | 1978-07-12 | 1980-01-28 | Nippon Denso Co Ltd | Wave-form switching apparatus |
JPS5815476A (ja) * | 1981-07-18 | 1983-01-28 | Brother Ind Ltd | モ−タの速度制御システム |
JPS58225722A (ja) * | 1982-06-23 | 1983-12-27 | Sanyo Electric Co Ltd | 重み付けされたスイツチング素子 |
JPS5927569A (ja) * | 1982-08-06 | 1984-02-14 | Hitachi Ltd | 半導体スイツチ素子 |
US4532443A (en) * | 1983-06-27 | 1985-07-30 | Sundstrand Corporation | Parallel MOSFET power switch circuit |
US4608706A (en) * | 1983-07-11 | 1986-08-26 | International Business Machines Corporation | High-speed programmable timing generator |
US4609832A (en) * | 1983-10-14 | 1986-09-02 | Sundstrand Corporation | Incremental base drive circuit for a power transistor |
JPS60189589A (ja) * | 1984-03-09 | 1985-09-27 | 本田技研工業株式会社 | エンジン稼動時間計測装置 |
US4567379A (en) * | 1984-05-23 | 1986-01-28 | Burroughs Corporation | Parallel current sharing system |
US4616142A (en) * | 1984-12-31 | 1986-10-07 | Sundstrand Corporation | Method of operating parallel-connected semiconductor switch elements |
JPS61291772A (ja) * | 1985-06-19 | 1986-12-22 | Hitachi Ltd | 電子配電用点火装置 |
US4719369A (en) * | 1985-08-14 | 1988-01-12 | Hitachi, Ltd. | Output circuit having transistor monitor for matching output impedance to load impedance |
DE3538584A1 (de) * | 1985-10-30 | 1987-05-07 | Ant Nachrichtentech | Anordnung bestehend aus mehreren parallel arbeitenden feldeffekttransistoren sowie anwendungen |
US4694227A (en) * | 1986-04-14 | 1987-09-15 | Everest & Jennings, Inc. | Current sharing circuit |
US4723114A (en) * | 1986-07-07 | 1988-02-02 | Texas Instruments Incorporated | Method and circuit for trimming the frequency of an oscillator |
US4707620A (en) * | 1986-07-22 | 1987-11-17 | Tektronix, Inc. | Adjustable impedance driver network |
-
1988
- 1988-04-13 JP JP63089082A patent/JP2656537B2/ja not_active Expired - Lifetime
-
1989
- 1989-04-07 KR KR1019890004603A patent/KR890016630A/ko not_active Application Discontinuation
- 1989-04-10 EP EP89106342A patent/EP0337362B1/en not_active Expired - Lifetime
- 1989-04-10 DE DE68928176T patent/DE68928176T2/de not_active Expired - Fee Related
- 1989-04-12 US US07/337,144 patent/US4977333A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0337362A2 (en) | 1989-10-18 |
EP0337362A3 (en) | 1990-12-05 |
US4977333A (en) | 1990-12-11 |
EP0337362B1 (en) | 1997-07-16 |
JPH01261917A (ja) | 1989-10-18 |
DE68928176T2 (de) | 1998-01-08 |
JP2656537B2 (ja) | 1997-09-24 |
DE68928176D1 (de) | 1997-08-21 |
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Legal Events
Date | Code | Title | Description |
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WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |