KR890015069A - 양성-작용 감광성 혼합물 및 이로부터 제조된 고열 안정성 기록물질 - Google Patents

양성-작용 감광성 혼합물 및 이로부터 제조된 고열 안정성 기록물질 Download PDF

Info

Publication number
KR890015069A
KR890015069A KR1019890003877A KR890003877A KR890015069A KR 890015069 A KR890015069 A KR 890015069A KR 1019890003877 A KR1019890003877 A KR 1019890003877A KR 890003877 A KR890003877 A KR 890003877A KR 890015069 A KR890015069 A KR 890015069A
Authority
KR
South Korea
Prior art keywords
photosensitive
mixture according
positive
photosensitive mixture
acting
Prior art date
Application number
KR1019890003877A
Other languages
English (en)
Other versions
KR0135421B1 (ko
Inventor
슈미트 악셀
쨘 볼프강
베렌스 부르크하르트
Original Assignee
베트라우퍼, 오일러
훽스트 아크티엔 게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 베트라우퍼, 오일러, 훽스트 아크티엔 게젤샤프트 filed Critical 베트라우퍼, 오일러
Publication of KR890015069A publication Critical patent/KR890015069A/ko
Application granted granted Critical
Publication of KR0135421B1 publication Critical patent/KR0135421B1/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00—Photosensitive materials
    • G03C1/52—Compositions containing diazo compounds as photosensitive substances
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Developing Agents For Electrophotography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

내용 없음.

Description

양성-작용 감광성 혼합물 및 이로부터 제조된 고열 안정성 기록물질
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (9)

  1. 감광성 화합물로서 o-퀴논디아자이드를 함유하고, m-크레졸 및 2,3,6,-트리알킬페놀을 함유한 혼합물로부터 제조됨을 특징으로하며 물에는 불용성이나 수성-알칼리 매질중에서는 가용성인 노볼락 형의 결합제를 함유한 양성-작용 감광성 혼합물.
  2. 제1항에 있어서, 노볼락이 제조된 혼합물이 75 내지 95몰%의 m-크레졸 및 5 내지 25몰%의 2,3,6-트리알킬 페놀을 함유함을 특징으로 하는 감광성 혼합물.
  3. 제1항 및 제2항에 있어서, 노볼락 수지가 최소 110℃, 바람직하게 는 최소 115℃의 글라스 전이 온도를 가짐을 특징으로 하는 감광성 혼합물.
  4. 제1항 내지 제3항중 어느 한 항에 있어서 2,3,6,-트리알킬페놀이 2,3,6-트리메틸 페놀임을 특징으로 하는 감광성 혼합물.
  5. 제1항 내지 제4항중 어느 한 항에 있어서, o-나프토퀴논 디아자이드 설폰산 또는 o-벤조퀴논디아자이드설폰산의 에스테르 또는 아미드를 o-퀴논디아자이드로서 사용함을 특징으로 하는 감광성 혼합물.
  6. 제5항에 있어서, o-나프토퀴논디아자이드-4-또는-5-설폰산과 모노-또는 폴리하이드록시벤조페논과의 에스테르를 사용함을 특징으로 하는 감광성 혼합물.
  7. 제1항 내지 제6항중 어느 한 항에 있어서, o-퀴논디아자이드 5 내지 100중량부가 노볼락 수지 100중량부당 상기 혼합물중에 함유됨을 특징으로 하는 감광성 혼합물.
  8. 필수적으로 제1항 내지 제7항의 감광성 혼합물로 제조됨을 특징으로 하는 감광성 층으로 코팅된 지지체로 이루어진 인쇄 배선판, 마이크로 일렉트론 성분부위 및 오프셋 인쇄판을 제조하기에 적합한 양성-작용기록 물질.
  9. 제1항 내지 제7항중의 감광성 혼합물을 임의로 접착 촉진 코팅하여 제조된 지지체에 적용하여, 이 물질을 건조시키고 화학 광선에 의해 거의 상-방향으로 노출시킨 뒤, 최종적으로 상을 수성-알칼리 현상액으로 현상하여 상을 드러내게 함을 특징으로 하는 제8항의 양성-작용 기록 물질의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890003877A 1988-03-29 1989-03-28 열 안정성이 큰 양성-작용 감광성 혼합물 및 이로부터 제조된 기록 물질 KR0135421B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3810631A DE3810631A1 (de) 1988-03-29 1988-03-29 Positiv arbeitendes lichtempfindliches gemisch und daraus hergestelltes aufzeichnungsmaterial mit hohem waermestand
DEP3810631.0 1988-03-29

Publications (2)

Publication Number Publication Date
KR890015069A true KR890015069A (ko) 1989-10-28
KR0135421B1 KR0135421B1 (ko) 1998-04-22

Family

ID=6350960

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890003877A KR0135421B1 (ko) 1988-03-29 1989-03-28 열 안정성이 큰 양성-작용 감광성 혼합물 및 이로부터 제조된 기록 물질

Country Status (6)

Country Link
US (1) US4971887A (ko)
EP (1) EP0335220B1 (ko)
JP (1) JP2834469B2 (ko)
KR (1) KR0135421B1 (ko)
DE (2) DE3810631A1 (ko)
HK (1) HK16395A (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5753406A (en) * 1988-10-18 1998-05-19 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive resin composition
JPH0354565A (ja) * 1989-07-24 1991-03-08 Japan Synthetic Rubber Co Ltd パターン形成方法
US5279922A (en) * 1989-08-07 1994-01-18 Konica Corporation Light-sensitive coating liquid
CA2023791A1 (en) * 1989-08-24 1991-02-25 Ayako Ida Radiation-sensitive positive resist composition
US5322757A (en) * 1989-09-08 1994-06-21 Ocg Microelectronic Materials, Inc. Positive photoresists comprising a novolak resin made from 2,3-dimethyl phenol,2,3,5-trimethylphenol and aldehyde with no meta-cresol present
US5324620A (en) * 1989-09-08 1994-06-28 Ocg Microeletronic Materials, Inc. Radiation-sensitive compositions containing novolak polymers made from four phenolic derivatives and an aldehyde
DE69032873T2 (de) * 1989-09-08 1999-07-29 Olin Microelectronic Chemicals, Inc., Norwalk, Conn. Vollständig substituierte Novalak-Polymere enthaltende Strahlungsempfindliche Zusammensetzungen
US5208138A (en) * 1990-02-05 1993-05-04 Morton International, Inc. High contrast high thermal stability positive photoresists having novolak resins of lowered hydroxyl content
US5182184A (en) * 1990-02-05 1993-01-26 Morton International, Inc. Novolak resins of lowered hydroxyl content and high contrast high thermal stability positive photoresists prepared therefrom
KR910015883A (ko) * 1990-02-16 1991-09-30 우 쳉지우 감광성 필름 형성 공중합체 및 그로 구성되는 조성물 및 그로써 네가티브 또는 포지티브 사진 상을 제조하는 방법
US5346799A (en) * 1991-12-23 1994-09-13 Ocg Microelectronic Materials, Inc. Novolak resins and their use in radiation-sensitive compositions wherein the novolak resins are made by condensing 2,6-dimethylphenol, 2,3-dimethylphenol, a para-substituted phenol and an aldehyde
US6280910B1 (en) 1992-11-23 2001-08-28 Pioneer Electronic Corporation Photoresist for optical disc and method of preparing optical disc utilizing photoresist
JP3324898B2 (ja) * 1995-02-24 2002-09-17 東京応化工業株式会社 ポジ型レジストパターンの製造方法
US5645970A (en) * 1995-10-25 1997-07-08 Industrial Technology Research Institute Weak base developable positive photoresist composition containing quinonediazide compound
CA2360329A1 (en) * 1999-01-11 2000-07-20 Schott Glas Flat light source
JP4150834B2 (ja) * 1999-03-04 2008-09-17 Ｊｓｒ株式会社 感光性樹脂組成物、感光性樹脂膜およびこれらを用いたバンプ形成方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3779778A (en) * 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
CH621416A5 (ko) * 1975-03-27 1981-01-30 Hoechst Ag
DE2718254C3 (de) * 1977-04-25 1980-04-10 Hoechst Ag, 6000 Frankfurt Strahlungsempfindliche Kopiermasse
DE2829512A1 (de) * 1978-07-05 1980-01-17 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
DE2829511A1 (de) * 1978-07-05 1980-01-24 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
DE2928636A1 (de) * 1979-07-16 1981-02-12 Hoechst Ag Strahlungsempfindliches gemisch und verfahren zur herstellung von reliefbildern
US4587196A (en) * 1981-06-22 1986-05-06 Philip A. Hunt Chemical Corporation Positive photoresist with cresol-formaldehyde novolak resin and photosensitive naphthoquinone diazide
EP0070624B1 (en) * 1981-06-22 1986-11-20 Philip A. Hunt Chemical Corporation Novolak resin and a positive photoresist composition containing the same
US4377631A (en) * 1981-06-22 1983-03-22 Philip A. Hunt Chemical Corporation Positive novolak photoresist compositions
US4529682A (en) * 1981-06-22 1985-07-16 Philip A. Hunt Chemical Corporation Positive photoresist composition with cresol-formaldehyde novolak resins
JPS6057339A (ja) * 1983-09-08 1985-04-03 Sumitomo Chem Co Ltd ポジ型フォトレジスト組成物
JPS61185741A (ja) * 1985-02-13 1986-08-19 Mitsubishi Chem Ind Ltd ポジ型フオトレジスト組成物
US4737426A (en) * 1985-05-15 1988-04-12 Ciba-Geigy Corporation Cyclic acetals or ketals of beta-keto esters or amides
DE3603578A1 (de) * 1986-02-06 1987-08-13 Hoechst Ag Neue bis-1,2-naphthochinon-2-diazid-sulfonsaeure- amide, ihre verwendung in einem strahlungsempfindlichen gemisch und strahlungsempfindliches kopiermaterial
DE3751743T2 (de) * 1986-03-28 1996-11-14 Japan Synthetic Rubber Co Ltd Positiv arbeitende photoempfindliche Kunststoffzusammensetzung
JPH0654386B2 (ja) * 1986-03-28 1994-07-20 日本合成ゴム株式会社 ポジ型感放射線性樹脂組成物
JP2590342B2 (ja) * 1986-11-08 1997-03-12 住友化学工業株式会社 ポジ型フォトレジスト用ノボラック樹脂及びそれを含有するポジ型フォトレジスト組成物

Also Published As

Publication number Publication date
DE58905992D1 (de) 1993-12-02
EP0335220B1 (de) 1993-10-27
JPH0210352A (ja) 1990-01-16
EP0335220A2 (de) 1989-10-04
EP0335220A3 (en) 1990-05-16
US4971887A (en) 1990-11-20
KR0135421B1 (ko) 1998-04-22
JP2834469B2 (ja) 1998-12-09
DE3810631A1 (de) 1989-10-12
HK16395A (en) 1995-02-10

Similar Documents

Publication Publication Date Title
KR890015069A (ko) 양성-작용 감광성 혼합물 및 이로부터 제조된 고열 안정성 기록물질
US4160671A (en) Photosensitive composition
US3785825A (en) Light-sensitive quinone diazide compounds,compositions,and presensitized lithographic plate
CA1186439A (en) Light-sensitive mixture comprising a naphthoquinonediazidesulfonic acid ester and process for preparing said ester
US4581321A (en) Process for producing negative copies in a material based on 1,2-quinone diazides with thermal curing agent
US4266001A (en) Light-sensitive mixture
KR970076087A (ko) 포지티브형 감광성 수지조성물과 이를 이용한 전자장치
JPS561044A (en) Photosensitive composition
GB1347759A (en) Light sensitive materials
KR880009291A (ko) 포지티브-작용성 감광성 내식막 조성물
US4163672A (en) Photosensitive composition
JP3503839B2 (ja) ポジ型感光性組成物
JPH0380298B2 (ko)
US4460674A (en) Posi-type quinone diazide photosensitive composition with sensitizer therefor
KR900008329A (ko) 폴리이미드형 양화 감광성 내식막
US5225310A (en) Photosensitive mixture containing an ester or amide of 1,2-naphthoquinone diazide sulfonic or carboxylic acid, a phenolic binder resin and a bis-(4-hydroxyphenyl) speed enhancing compound
KR890014613A (ko) 혼합알데히드 노볼락수지와 이것으로 제조한 고콘트라스트 및 고열안정성의 양성 광레지스트
JPS5887554A (ja) 感光性混合物及び該混合物より製造した感光性複写材料
US5017462A (en) Process of producing negative relief copies utilizing photosensitive copying material with thermal hardening triazine compound
KR890008606A (ko) 포지티브-워킹 포토레지스트 조성물
EP0301101A4 (en) POSITIVE PHOTO-SENSITIVE RESIN PREPARATION.
JPH047502B2 (ko)
KR940005992A (ko) 기판 상에 패턴화된 폴리이미드 피막을 형성하는 방법
JPS603625A (ja) 光可溶化組成物
KR870011502A (ko) 감광제 조성물

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20001220

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee