KR890011011A - 반도체 기판의 실리콘 산화물층이 스트립된 반도체 장치 제조 방법 - Google Patents

반도체 기판의 실리콘 산화물층이 스트립된 반도체 장치 제조 방법 Download PDF

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Publication number
KR890011011A
KR890011011A KR1019880015671A KR880015671A KR890011011A KR 890011011 A KR890011011 A KR 890011011A KR 1019880015671 A KR1019880015671 A KR 1019880015671A KR 880015671 A KR880015671 A KR 880015671A KR 890011011 A KR890011011 A KR 890011011A
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KR
South Korea
Prior art keywords
oxide layer
semiconductor substrate
silicon oxide
semiconductor device
manufacturing
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Application number
KR1019880015671A
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English (en)
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KR0134380B1 (ko
Inventor
비쩨르 얀
데 뵈르 루카스
Original Assignee
이반 밀러 레르너
엔.브이.필립스 글로아이람펜파브리켄
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 이반 밀러 레르너, 엔.브이.필립스 글로아이람펜파브리켄 filed Critical 이반 밀러 레르너
Publication of KR890011011A publication Critical patent/KR890011011A/ko
Application granted granted Critical
Publication of KR0134380B1 publication Critical patent/KR0134380B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

내용 없음

Description

반도체 기판의 실리콘 산화물층이 스트립된 반도체 장치 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도 내지 3도는 상업적으로 이용가능한“싱글 웨이퍼”장치 실시예의 개략도.

Claims (5)

  1. 반도체 기판의 실리콘 산화물층의 감광성 내식막이 스트립되고, 감광성 내식막을 지나 반도체 기판이 산소-함유, 플라즈마를 처리실에서 처리하는 반도체 장치 제조방법에 있어서, 상기 반도체 기판은 제1 전극을 통해 정극성 단자 및 처리실내에 어떤 거리를 두고 배열된 제2전극을 통해 전기 공급원의 음극성 단자에 연결되며, 결과로서 전기적 필드는 실리콘 산화물층과 상기 플라즈마 사이에서 조절되는 것을 특징으로 하는 반도체 장치 제조 방법.
  2. 제 1항에 있어서, 제1 전극은 감광성 내식막으로 피복 안된 반도체 기판의 측에 연결된 것을 특징으로 하는 반도체 장치 제조 방법.
  3. 제1 또는 2항에 있어서, 제2전극은 전기 공급원의 음극성 단자 연결을 위해 처리실의 전기적 전도벽인 것을 특징으로 하는 반도체 장치 제조 방법.
  4. 제1,2 또는 3항에 있어서, 상기 전기 공급원은 산화물층에서 발생된 4-8MV/㎝ 정도의 필드 세기를 포함하는 것을 특징으로 하는 반도체 장치 제조 방법.
  5. 제1,2,3 또는 4항에 있어서, 상기 전기 공급원은 오직 제조 끝과정에서 처리 연소실로부터 모든 플라즈마가 제거된 후 스위치 오프되는 것을 특징으로 하는 반도체 장치 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880015671A 1987-12-01 1988-11-28 반도체 기판의 산화 실리콘층 상의 포토레지스트가 제거된 반도체 장치 제조방법. KR0134380B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8702875 1987-12-01
NL8702875A NL8702875A (nl) 1987-12-01 1987-12-01 Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij fotolak op een laag van siliciumoxide op een halfgeleidersubstraat wordt verwijderd.

Publications (2)

Publication Number Publication Date
KR890011011A true KR890011011A (ko) 1989-08-12
KR0134380B1 KR0134380B1 (ko) 1998-04-20

Family

ID=19851004

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880015671A KR0134380B1 (ko) 1987-12-01 1988-11-28 반도체 기판의 산화 실리콘층 상의 포토레지스트가 제거된 반도체 장치 제조방법.

Country Status (5)

Country Link
EP (1) EP0320045B1 (ko)
JP (1) JP2628729B2 (ko)
KR (1) KR0134380B1 (ko)
DE (1) DE3887740T2 (ko)
NL (1) NL8702875A (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3251184B2 (ja) * 1996-11-01 2002-01-28 日本電気株式会社 レジスト除去方法及びレジスト除去装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4233109A (en) * 1976-01-16 1980-11-11 Zaidan Hojin Handotai Kenkyu Shinkokai Dry etching method
JPS5613480A (en) * 1979-07-13 1981-02-09 Hitachi Ltd Dry etching apparatus
US4298429A (en) * 1979-09-17 1981-11-03 Beloit Corporation Means for effecting cross direction fiber orientation in a papermaking machine headbox
JPS5681678A (en) * 1979-12-05 1981-07-03 Toshiba Corp Method and apparatus for plasma etching
US4333814A (en) * 1979-12-26 1982-06-08 Western Electric Company, Inc. Methods and apparatus for improving an RF excited reactive gas plasma
JPS58131628U (ja) * 1982-03-01 1983-09-05 沖電気工業株式会社 半導体製造装置の汚染のモニタ装置
JPS5980932A (ja) * 1983-08-31 1984-05-10 Hitachi Ltd プラズマ処理装置
JPS60154621A (ja) * 1984-01-25 1985-08-14 Hitachi Ltd 真空処理方法
US4581100A (en) * 1984-10-29 1986-04-08 International Business Machines Corporation Mixed excitation plasma etching system

Also Published As

Publication number Publication date
DE3887740T2 (de) 1994-07-28
EP0320045A1 (en) 1989-06-14
KR0134380B1 (ko) 1998-04-20
DE3887740D1 (de) 1994-03-24
NL8702875A (nl) 1989-07-03
JP2628729B2 (ja) 1997-07-09
EP0320045B1 (en) 1994-02-09
JPH01194421A (ja) 1989-08-04

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