KR890004566B1 - 반도체 제조공정중의 패턴의 씨디변화를 모니타링하기 위한 테스트 패턴 - Google Patents

반도체 제조공정중의 패턴의 씨디변화를 모니타링하기 위한 테스트 패턴 Download PDF

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Publication number
KR890004566B1
KR890004566B1 KR1019870002613A KR870002613A KR890004566B1 KR 890004566 B1 KR890004566 B1 KR 890004566B1 KR 1019870002613 A KR1019870002613 A KR 1019870002613A KR 870002613 A KR870002613 A KR 870002613A KR 890004566 B1 KR890004566 B1 KR 890004566B1
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KR
South Korea
Prior art keywords
pattern
line
current layer
layer
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019870002613A
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English (en)
Korean (ko)
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KR880011882A (ko
Inventor
이원식
Original Assignee
삼성전자 주식회사
강진구
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 삼성전자 주식회사, 강진구 filed Critical 삼성전자 주식회사
Priority to KR1019870002613A priority Critical patent/KR890004566B1/ko
Priority to JP63065597A priority patent/JPS63253201A/ja
Priority to US07/170,428 priority patent/US4863548A/en
Publication of KR880011882A publication Critical patent/KR880011882A/ko
Application granted granted Critical
Publication of KR890004566B1 publication Critical patent/KR890004566B1/ko
Expired legal-status Critical Current

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    • H10P74/00—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length-Measuring Instruments Using Mechanical Means (AREA)
KR1019870002613A 1987-03-21 1987-03-21 반도체 제조공정중의 패턴의 씨디변화를 모니타링하기 위한 테스트 패턴 Expired KR890004566B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019870002613A KR890004566B1 (ko) 1987-03-21 1987-03-21 반도체 제조공정중의 패턴의 씨디변화를 모니타링하기 위한 테스트 패턴
JP63065597A JPS63253201A (ja) 1987-03-21 1988-03-18 半導体製造工程においてパターンの限界寸法の変化をモニタするためのテストパターン
US07/170,428 US4863548A (en) 1987-03-21 1988-03-18 Test pattern for use monitoring variations of critical dimensions of patterns during fabrication of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019870002613A KR890004566B1 (ko) 1987-03-21 1987-03-21 반도체 제조공정중의 패턴의 씨디변화를 모니타링하기 위한 테스트 패턴

Publications (2)

Publication Number Publication Date
KR880011882A KR880011882A (ko) 1988-10-31
KR890004566B1 true KR890004566B1 (ko) 1989-11-15

Family

ID=19260198

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870002613A Expired KR890004566B1 (ko) 1987-03-21 1987-03-21 반도체 제조공정중의 패턴의 씨디변화를 모니타링하기 위한 테스트 패턴

Country Status (3)

Country Link
US (1) US4863548A (enExample)
JP (1) JPS63253201A (enExample)
KR (1) KR890004566B1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8811678D0 (en) * 1988-05-17 1988-06-22 British Telecomm Linewidth loss measurement
DE3942861A1 (de) * 1989-12-23 1991-06-27 Bosch Gmbh Robert Verfahren zur bestimmung der lage eines pn-uebergangs
EP0477957A1 (en) * 1990-09-28 1992-04-01 Nec Corporation Process of fabricating semiconductor IC devices, including several lithographic steps and check patterns
US5512930A (en) * 1991-09-18 1996-04-30 Tektronix, Inc. Systems and methods of printing by applying an image enhancing precoat
US5546114A (en) * 1991-09-18 1996-08-13 Tektronix, Inc. Systems and methods for making printed products
US5259920A (en) * 1991-12-31 1993-11-09 At&T Bell Laboratories Manufacturing method, including etch-rate monitoring
US5458731A (en) * 1994-02-04 1995-10-17 Fujitsu Limited Method for fast and non-destructive examination of etched features
JP3214279B2 (ja) * 1995-01-31 2001-10-02 ヤマハ株式会社 半導体装置の製造方法
US5971586A (en) * 1995-04-21 1999-10-26 Sony Corporation Identifying causes of semiconductor production yield loss
US5711848A (en) * 1995-06-06 1998-01-27 Sony Corporation Non-product patterned particle test wafer and testing method therefor
US5847818A (en) * 1997-07-16 1998-12-08 Winbond Electronics Corp. CD vernier apparatus for SEM CD measurement
KR19990060943A (ko) * 1997-12-31 1999-07-26 윤종용 반도체장치 제조용 계측설비의 기준 웨이퍼 및 이의 제조방법
KR20000045476A (ko) * 1998-12-30 2000-07-15 김영환 반도체소자의 테스트 패턴
US6429930B1 (en) 2000-09-06 2002-08-06 Accent Optical Technologies, Inc. Determination of center of focus by diffraction signature analysis
US20060100730A1 (en) * 2002-07-12 2006-05-11 Parkes Alan S Method for detection and relocation of wafer defects
WO2004008501A1 (en) * 2002-07-12 2004-01-22 Jeol Usa, Inc. Method for detection and relocation of wafer defects
US7119893B2 (en) * 2003-04-10 2006-10-10 Accent Optical Technologies, Inc. Determination of center of focus by parameter variability analysis
US7856138B2 (en) * 2005-02-24 2010-12-21 Applied Materials Israel, Ltd. System, method and computer software product for inspecting charged particle responsive resist
KR20100031962A (ko) * 2008-09-17 2010-03-25 삼성전자주식회사 카본계막 식각 방법 및 이를 이용한 콘택홀 형성방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4141780A (en) * 1977-12-19 1979-02-27 Rca Corporation Optically monitoring the thickness of a depositing layer
JPS5740934A (en) * 1980-08-26 1982-03-06 Nec Corp Manufacture of semiconductor element
JPS5756934A (en) * 1980-09-22 1982-04-05 Nec Corp Manufacture of semiconductor element
JPS58180027A (ja) * 1982-04-16 1983-10-21 Oki Electric Ind Co Ltd 半導体装置の製造方法
JPS5951539A (ja) * 1982-09-17 1984-03-26 Nec Corp 半導体装置
JPH0669031B2 (ja) * 1984-07-17 1994-08-31 日本電気株式会社 半導体装置
JP3468372B2 (ja) * 1992-09-07 2003-11-17 株式会社日立メディコ 定位的放射線治療装置

Also Published As

Publication number Publication date
US4863548A (en) 1989-09-05
JPS63253201A (ja) 1988-10-20
KR880011882A (ko) 1988-10-31
JPH0411801B2 (enExample) 1992-03-02

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