KR890003488B1 - 데이터 전송회로 - Google Patents

데이터 전송회로 Download PDF

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Publication number
KR890003488B1
KR890003488B1 KR1019860005286A KR860005286A KR890003488B1 KR 890003488 B1 KR890003488 B1 KR 890003488B1 KR 1019860005286 A KR1019860005286 A KR 1019860005286A KR 860005286 A KR860005286 A KR 860005286A KR 890003488 B1 KR890003488 B1 KR 890003488B1
Authority
KR
South Korea
Prior art keywords
data
input
buses
output
clock
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR1019860005286A
Other languages
English (en)
Korean (ko)
Other versions
KR880000862A (ko
Inventor
서승모
Original Assignee
삼성전자 주식회사
김광호
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사, 김광호 filed Critical 삼성전자 주식회사
Priority to KR1019860005286A priority Critical patent/KR890003488B1/ko
Priority to US07/067,016 priority patent/US4757215A/en
Priority to JP62159934A priority patent/JPS639098A/ja
Publication of KR880000862A publication Critical patent/KR880000862A/ko
Application granted granted Critical
Publication of KR890003488B1 publication Critical patent/KR890003488B1/ko
Priority to JP5250928A priority patent/JP2763256B2/ja
Priority to JP5250929A priority patent/JPH06223573A/ja
Expired legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors
    • H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
    • H03K3/356147—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit using pass gates
    • H03K3/356156—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit using pass gates with synchronous operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Databases & Information Systems (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
KR1019860005286A 1986-06-30 1986-06-30 데이터 전송회로 Expired KR890003488B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019860005286A KR890003488B1 (ko) 1986-06-30 1986-06-30 데이터 전송회로
US07/067,016 US4757215A (en) 1986-06-30 1987-06-29 Data transmission circuit having decreased parasitic capacitance
JP62159934A JPS639098A (ja) 1986-06-30 1987-06-29 デ−タ伝送回路
JP5250928A JP2763256B2 (ja) 1986-06-30 1993-09-14 データ伝送回路
JP5250929A JPH06223573A (ja) 1986-06-30 1993-09-14 データ伝送回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019860005286A KR890003488B1 (ko) 1986-06-30 1986-06-30 데이터 전송회로

Publications (2)

Publication Number Publication Date
KR880000862A KR880000862A (ko) 1988-03-30
KR890003488B1 true KR890003488B1 (ko) 1989-09-22

Family

ID=19250843

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860005286A Expired KR890003488B1 (ko) 1986-06-30 1986-06-30 데이터 전송회로

Country Status (3)

Country Link
US (1) US4757215A (enExample)
JP (3) JPS639098A (enExample)
KR (1) KR890003488B1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR890003488B1 (ko) * 1986-06-30 1989-09-22 삼성전자 주식회사 데이터 전송회로
JP2621176B2 (ja) * 1987-05-14 1997-06-18 ソニー株式会社 ワンチツプマイクロコンピユータ
KR900006293B1 (ko) * 1987-06-20 1990-08-27 삼성전자 주식회사 씨모오스 디램의 데이터 전송회로
DE3739467A1 (de) * 1987-11-21 1989-06-01 Philips Nv Schaltungsanordnung fuer eine doppel-busleitung
KR910003594B1 (ko) * 1988-05-13 1991-06-07 삼성전자 주식회사 스페어컬럼(column)선택방법 및 회로
US5159209A (en) * 1991-04-12 1992-10-27 Artisoft, Inc. Circuit to selectively process dip switches onto bus lines
KR940001644B1 (ko) * 1991-05-24 1994-02-28 삼성전자 주식회사 메모리 장치의 입출력 라인 프리차아지 방법
KR940008296B1 (ko) * 1991-06-19 1994-09-10 삼성전자 주식회사 고속 센싱동작을 수행하는 센스앰프
US5283760A (en) * 1991-08-14 1994-02-01 Samsung Electronics Co., Ltd. Data transmission circuit
DE69228919T2 (de) * 1991-12-17 1999-08-26 Stmicroelectronics Tristate-Treiberschaltung für interne Datenbusleitungen
US5243572A (en) * 1992-01-15 1993-09-07 Motorola, Inc. Deselect circuit
JP2768175B2 (ja) * 1992-10-26 1998-06-25 日本電気株式会社 半導体メモリ
US5546338A (en) * 1994-08-26 1996-08-13 Townsend And Townsend Khourie And Crew Fast voltage equilibration of differential data lines
US6804760B2 (en) 1994-12-23 2004-10-12 Micron Technology, Inc. Method for determining a type of memory present in a system
US6525971B2 (en) 1995-06-30 2003-02-25 Micron Technology, Inc. Distributed write data drivers for burst access memories
US6981126B1 (en) 1996-07-03 2005-12-27 Micron Technology, Inc. Continuous interleave burst access
US6721860B2 (en) * 1998-01-29 2004-04-13 Micron Technology, Inc. Method for bus capacitance reduction
US6349051B1 (en) 1998-01-29 2002-02-19 Micron Technology, Inc. High speed data bus
US6771536B2 (en) 2002-02-27 2004-08-03 Sandisk Corporation Operating techniques for reducing program and read disturbs of a non-volatile memory

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1008518A (en) * 1972-08-07 1977-04-12 Edward J. Boleky (Iii) Dynamic operation of deep-depletion transistors
JPS573289A (en) * 1980-06-04 1982-01-08 Hitachi Ltd Semiconductor storing circuit device
JPS5776925A (en) * 1980-10-29 1982-05-14 Toshiba Corp Mos type circuit
US4686396A (en) * 1985-08-26 1987-08-11 Xerox Corporation Minimum delay high speed bus driver
KR890003488B1 (ko) * 1986-06-30 1989-09-22 삼성전자 주식회사 데이터 전송회로

Also Published As

Publication number Publication date
JPS639098A (ja) 1988-01-14
JPH0456398B2 (enExample) 1992-09-08
JPH06223573A (ja) 1994-08-12
JPH06325599A (ja) 1994-11-25
JP2763256B2 (ja) 1998-06-11
US4757215A (en) 1988-07-12
KR880000862A (ko) 1988-03-30

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