KR890003382B1 - 유전체 분리 콤프리멘타리 ic의 제조방법 - Google Patents

유전체 분리 콤프리멘타리 ic의 제조방법 Download PDF

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Publication number
KR890003382B1
KR890003382B1 KR1019840006235A KR840006235A KR890003382B1 KR 890003382 B1 KR890003382 B1 KR 890003382B1 KR 1019840006235 A KR1019840006235 A KR 1019840006235A KR 840006235 A KR840006235 A KR 840006235A KR 890003382 B1 KR890003382 B1 KR 890003382B1
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South Korea
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substrate
separator
region
mask layer
type
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KR1019840006235A
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English (en)
Korean (ko)
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KR850003067A (ko
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사토루 타니
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후지쓰가부시끼가이샤
야마모도 다꾸마
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/038—Diffusions-staged
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/973—Substrate orientation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
KR1019840006235A 1983-10-12 1984-10-06 유전체 분리 콤프리멘타리 ic의 제조방법 Expired KR890003382B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58191181A JPS6081839A (ja) 1983-10-12 1983-10-12 半導体装置の製造方法
JP58-191181 1983-10-12

Publications (2)

Publication Number Publication Date
KR850003067A KR850003067A (ko) 1985-05-28
KR890003382B1 true KR890003382B1 (ko) 1989-09-19

Family

ID=16270245

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840006235A Expired KR890003382B1 (ko) 1983-10-12 1984-10-06 유전체 분리 콤프리멘타리 ic의 제조방법

Country Status (6)

Country Link
US (1) US4624047A (enExample)
EP (1) EP0139587B1 (enExample)
JP (1) JPS6081839A (enExample)
KR (1) KR890003382B1 (enExample)
CA (1) CA1219379A (enExample)
DE (1) DE3483809D1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4923820A (en) * 1985-09-18 1990-05-08 Harris Corporation IC which eliminates support bias influence on dielectrically isolated components
US4807012A (en) * 1985-09-18 1989-02-21 Harris Corporation IC which eliminates support bias influence on dielectrically isolated components
US4870029A (en) * 1987-10-09 1989-09-26 American Telephone And Telegraph Company, At&T-Technologies, Inc. Method of forming complementary device structures in partially processed dielectrically isolated wafers
US4794092A (en) * 1987-11-18 1988-12-27 Grumman Aerospace Corporation Single wafer moated process
JPH01179342A (ja) * 1988-01-05 1989-07-17 Toshiba Corp 複合半導体結晶体
US4820653A (en) * 1988-02-12 1989-04-11 American Telephone And Telegraph Company Technique for fabricating complementary dielectrically isolated wafer
JPH02208952A (ja) * 1989-02-08 1990-08-20 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5272095A (en) * 1992-03-18 1993-12-21 Research Triangle Institute Method of manufacturing heterojunction transistors with self-aligned metal contacts
US5318916A (en) * 1992-07-31 1994-06-07 Research Triangle Institute Symmetric self-aligned processing
US5436173A (en) * 1993-01-04 1995-07-25 Texas Instruments Incorporated Method for forming a semiconductor on insulator device
US5914517A (en) * 1996-07-16 1999-06-22 Nippon Steel Corporation Trench-isolation type semiconductor device
US6040597A (en) * 1998-02-13 2000-03-21 Advanced Micro Devices, Inc. Isolation boundaries in flash memory cores
JP2002083876A (ja) * 2000-09-07 2002-03-22 Sanyo Electric Co Ltd 半導体集積回路装置の製造方法
TW512526B (en) * 2000-09-07 2002-12-01 Sanyo Electric Co Semiconductor integrated circuit device and manufacturing method thereof
KR20070069951A (ko) * 2005-12-28 2007-07-03 동부일렉트로닉스 주식회사 고전압용 바이씨모스소자의 제조방법

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3412296A (en) * 1965-10-19 1968-11-19 Sprague Electric Co Monolithic structure with threeregion or field effect complementary transistors
US3412295A (en) * 1965-10-19 1968-11-19 Sprague Electric Co Monolithic structure with three-region complementary transistors
US3509433A (en) * 1967-05-01 1970-04-28 Fairchild Camera Instr Co Contacts for buried layer in a dielectrically isolated semiconductor pocket
US3818583A (en) * 1970-07-08 1974-06-25 Signetics Corp Method for fabricating semiconductor structure having complementary devices
US3755012A (en) * 1971-03-19 1973-08-28 Motorola Inc Controlled anisotropic etching process for fabricating dielectrically isolated field effect transistor
US3798753A (en) * 1971-11-12 1974-03-26 Signetics Corp Method for making bulk resistor and integrated circuit using the same
JPS5120267B2 (enExample) * 1972-05-13 1976-06-23
US3876480A (en) * 1972-08-28 1975-04-08 Motorola Inc Method of manufacturing high speed, isolated integrated circuit
US3954522A (en) * 1973-06-28 1976-05-04 Motorola, Inc. Integrated circuit process
GB2060252B (en) * 1979-09-17 1984-02-22 Nippon Telegraph & Telephone Mutually isolated complementary semiconductor elements
US4255209A (en) * 1979-12-21 1981-03-10 Harris Corporation Process of fabricating an improved I2 L integrated circuit utilizing diffusion and epitaxial deposition
US4290831A (en) * 1980-04-18 1981-09-22 Harris Corporation Method of fabricating surface contacts for buried layer into dielectric isolated islands
US4408386A (en) * 1980-12-12 1983-10-11 Oki Electric Industry Co., Ltd. Method of manufacturing semiconductor integrated circuit devices
US4481707A (en) * 1983-02-24 1984-11-13 The United States Of America As Represented By The Secretary Of The Air Force Method for the fabrication of dielectric isolated junction field effect transistor and PNP transistor
JPS6074635A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
DE3483809D1 (de) 1991-02-07
JPS6362897B2 (enExample) 1988-12-05
EP0139587A2 (en) 1985-05-02
US4624047A (en) 1986-11-25
KR850003067A (ko) 1985-05-28
EP0139587A3 (en) 1987-11-25
EP0139587B1 (en) 1991-01-02
CA1219379A (en) 1987-03-17
JPS6081839A (ja) 1985-05-09

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