KR880010485A - 고속신호 전달용 집적회로 - Google Patents

고속신호 전달용 집적회로 Download PDF

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Publication number
KR880010485A
KR880010485A KR1019880001755A KR880001755A KR880010485A KR 880010485 A KR880010485 A KR 880010485A KR 1019880001755 A KR1019880001755 A KR 1019880001755A KR 880001755 A KR880001755 A KR 880001755A KR 880010485 A KR880010485 A KR 880010485A
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KR
South Korea
Prior art keywords
semiconductor
integrated circuit
gallium
arsenide
thickness
Prior art date
Application number
KR1019880001755A
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English (en)
Inventor
빠띠용 쟝-노엘
가비야르 베르뜨랑
마릭 마르땡 제라르
Original Assignee
이반 밀러 레르너
엔. 브이. 필립스 글로아이람펜파브리켄
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 이반 밀러 레르너, 엔. 브이. 필립스 글로아이람펜파브리켄 filed Critical 이반 밀러 레르너
Publication of KR880010485A publication Critical patent/KR880010485A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53285—Conductive materials containing superconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

내용 없음

Description

고속신호 전달용 집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
도면은 도선을 구성하는 회로의 에피택셜 구조의 단면도.

Claims (7)

  1. 상기 회로 소자 사이에서 다수의 회로 소자 및 상호 접합부와 함께 반도체 본제를 구비하는 집적회로에 있어서, 반도체 본체는 상기 처음 에너지 갭보다 큰 최소한의 제1에너지 갭을 가지는 제1반도체층과 제2에너지 갭을 가지는 제2반도체층의 층상 구조를 구비하고, 상기 제1,2 반도체층은 그들과 상기 경계부 근처의 전류 통로를 형성하는 2차원의 충전 캐리어 기체 사이의 경계부에서 형성하며, 여기서 상기 경계부에 수직인 충분히 높은 자계 성분과 충분히 작은 온도에서의 적용은 상기 전류 통로가 초전도성이 되며, 그 결과 상기 전류 통로의 종단 저항은 실질적으로 영으로 감소되는 것을 특징으로 하는 집적회로.
  2. 제1항에 있어서, 상기 제1반도체층은 한 무리의 반도체 재료 또는 갈륨 비소 및 갈륨 인듐비소로 구비하며, 상기 제2반도체층은 인듐 산화물, 갈륨 인듐 비소, 알루미늄 갈륨 인듐 비소, 알루미늄 인듐 비소및 갈륨 인듐 산화물로 반도체 재료를 구비하는 것을 특징으로 하는 집적회로.
  3. 제1항에 있어서, 상기 상호 접합부는 주입된 반도체 지역에 의하여 옆으로 한정되는 것을 특징으로 하는 집적회로.
  4. 제1항 또는 2항에 있어서, 상기 상호 접합부는 확산된 반도체 지역에 의하여 옆으로 한정되는 것을 특징으로 하는 집적회로.
  5. 전항중 어느 한 항에 있어서, 상기 자계 성분은 7테슬라보다 적은 것을 것을 특징으로 하는 집적회로.
  6. 전항중 어느 한 항에 있어서, 2차원의 캐리어 기체는 평방 센티미터당 약 3×1011의 전자 밀도를 갖는 전자 기체를 특징으로 하는 집적회로.
  7. 전항중 어느 한 항에 있어서, 층을 진 구조는 반 절연 기판상에 두께 ≤1㎛ 그리고 ≥0.5㎛의 알루미늄 갈륨비소의 언도우프트층과, 두께 ≤1㎛ 그리고 ≥0.5㎛의 갈륨비소의 언도우프트층과, 두께 ≤10nm 그리고 ≤2nm의 알루미늄 갈륨의 언도우프트층과, 두께 ≤50nm 그리고 〉5nm의 알루미늄 갈륨의 1018cm-3실리콘 도우프트층과 두께 ≤50nm 그리고 ≥50nm의 갈륨비소 1018cm-3실리콘 도우프트층을 구비하는 것을 특징으로 하는 집적회로.
    ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880001755A 1987-02-20 1988-02-19 고속신호 전달용 집적회로 KR880010485A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8702233A FR2611305B1 (fr) 1987-02-20 1987-02-20 Circuit comportant des lignes conductrices pour le transfert de signaux rapides
FR8702233 1987-02-20

Publications (1)

Publication Number Publication Date
KR880010485A true KR880010485A (ko) 1988-10-10

Family

ID=9348137

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880001755A KR880010485A (ko) 1987-02-20 1988-02-19 고속신호 전달용 집적회로

Country Status (7)

Country Link
US (1) US4857974A (ko)
EP (1) EP0279497B1 (ko)
JP (1) JPS63208285A (ko)
KR (1) KR880010485A (ko)
CN (1) CN88100934A (ko)
DE (1) DE3881229T2 (ko)
FR (1) FR2611305B1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5189367A (en) * 1991-11-21 1993-02-23 Nec Research Institute, Inc. Magnetoresistor using a superlattice of GaAs and AlGaAs

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2913068A1 (de) * 1979-04-02 1980-10-23 Max Planck Gesellschaft Heterostruktur-halbleiterkoerper und verwendung hierfuer
JPS57176772A (en) * 1981-04-23 1982-10-30 Fujitsu Ltd Semiconductor device and manufacture thereof
FR2520157B1 (fr) * 1982-01-18 1985-09-13 Labo Electronique Physique Dispositif semi-conducteur du genre transistor a heterojonction(s)
JPH0783107B2 (ja) * 1984-04-19 1995-09-06 日本電気株式会社 電界効果トランジスタ
JPS61174776A (ja) * 1985-01-30 1986-08-06 Sony Corp ヘテロ接合電界効果トランジスタ
JPS6213063A (ja) * 1985-07-11 1987-01-21 Nec Corp 化合物半導体多層集積回路

Also Published As

Publication number Publication date
FR2611305B1 (fr) 1990-04-27
CN88100934A (zh) 1988-08-31
EP0279497A1 (fr) 1988-08-24
EP0279497B1 (fr) 1993-05-26
DE3881229D1 (de) 1993-07-01
JPS63208285A (ja) 1988-08-29
FR2611305A1 (fr) 1988-08-26
US4857974A (en) 1989-08-15
DE3881229T2 (de) 1993-12-23

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