DE3881229T2 - Schaltkreis mit Leiterbahnen zur Übertragung von schnellen Signalen. - Google Patents
Schaltkreis mit Leiterbahnen zur Übertragung von schnellen Signalen.Info
- Publication number
- DE3881229T2 DE3881229T2 DE88200280T DE3881229T DE3881229T2 DE 3881229 T2 DE3881229 T2 DE 3881229T2 DE 88200280 T DE88200280 T DE 88200280T DE 3881229 T DE3881229 T DE 3881229T DE 3881229 T2 DE3881229 T2 DE 3881229T2
- Authority
- DE
- Germany
- Prior art keywords
- transmission
- circuit
- conductor tracks
- fast signals
- fast
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005540 biological transmission Effects 0.000 title 1
- 239000004020 conductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53285—Conductive materials containing superconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR8702233A FR2611305B1 (fr) | 1987-02-20 | 1987-02-20 | Circuit comportant des lignes conductrices pour le transfert de signaux rapides |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3881229D1 DE3881229D1 (de) | 1993-07-01 |
DE3881229T2 true DE3881229T2 (de) | 1993-12-23 |
Family
ID=9348137
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE88200280T Expired - Fee Related DE3881229T2 (de) | 1987-02-20 | 1988-02-16 | Schaltkreis mit Leiterbahnen zur Übertragung von schnellen Signalen. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4857974A (de) |
EP (1) | EP0279497B1 (de) |
JP (1) | JPS63208285A (de) |
KR (1) | KR880010485A (de) |
CN (1) | CN88100934A (de) |
DE (1) | DE3881229T2 (de) |
FR (1) | FR2611305B1 (de) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5189367A (en) * | 1991-11-21 | 1993-02-23 | Nec Research Institute, Inc. | Magnetoresistor using a superlattice of GaAs and AlGaAs |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2913068A1 (de) * | 1979-04-02 | 1980-10-23 | Max Planck Gesellschaft | Heterostruktur-halbleiterkoerper und verwendung hierfuer |
JPS57176772A (en) * | 1981-04-23 | 1982-10-30 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
FR2520157B1 (fr) * | 1982-01-18 | 1985-09-13 | Labo Electronique Physique | Dispositif semi-conducteur du genre transistor a heterojonction(s) |
JPH0783107B2 (ja) * | 1984-04-19 | 1995-09-06 | 日本電気株式会社 | 電界効果トランジスタ |
JPS61174776A (ja) * | 1985-01-30 | 1986-08-06 | Sony Corp | ヘテロ接合電界効果トランジスタ |
JPS6213063A (ja) * | 1985-07-11 | 1987-01-21 | Nec Corp | 化合物半導体多層集積回路 |
-
1987
- 1987-02-20 FR FR8702233A patent/FR2611305B1/fr not_active Expired - Lifetime
-
1988
- 1988-02-16 EP EP88200280A patent/EP0279497B1/de not_active Expired - Lifetime
- 1988-02-16 CN CN198888100934A patent/CN88100934A/zh active Pending
- 1988-02-16 US US07/156,375 patent/US4857974A/en not_active Expired - Fee Related
- 1988-02-16 DE DE88200280T patent/DE3881229T2/de not_active Expired - Fee Related
- 1988-02-18 JP JP63034116A patent/JPS63208285A/ja active Pending
- 1988-02-19 KR KR1019880001755A patent/KR880010485A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
FR2611305B1 (fr) | 1990-04-27 |
CN88100934A (zh) | 1988-08-31 |
EP0279497A1 (de) | 1988-08-24 |
EP0279497B1 (de) | 1993-05-26 |
DE3881229D1 (de) | 1993-07-01 |
JPS63208285A (ja) | 1988-08-29 |
FR2611305A1 (fr) | 1988-08-26 |
US4857974A (en) | 1989-08-15 |
KR880010485A (ko) | 1988-10-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
8339 | Ceased/non-payment of the annual fee |