KR880010481A - 액상 박막 결정 성장방법 및 장치 - Google Patents

액상 박막 결정 성장방법 및 장치 Download PDF

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Publication number
KR880010481A
KR880010481A KR870001489A KR870001489A KR880010481A KR 880010481 A KR880010481 A KR 880010481A KR 870001489 A KR870001489 A KR 870001489A KR 870001489 A KR870001489 A KR 870001489A KR 880010481 A KR880010481 A KR 880010481A
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South Korea
Prior art keywords
melt
substrate
crystal growth
holder
temperature
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KR870001489A
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English (en)
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김기준
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강진구
삼성반도체통신 주식회사
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Priority to KR870001489A priority Critical patent/KR880010481A/ko
Priority to JP63034124A priority patent/JPS63209122A/ja
Priority to US07/157,981 priority patent/US4918029A/en
Publication of KR880010481A publication Critical patent/KR880010481A/ko
Priority to US07/509,300 priority patent/US5068516A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
    • H01L21/388—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/101—Liquid Phase Epitaxy, LPE

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음

Description

액상 박막 결정 성장방법 및 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 종래의 슬라이드식 액상 박막 결정 성장장치의 단면도.
제2도는 본 발명의 실시예에 따른 보조 가열기의 개략도.
제3(A)-(H)도는 본 발명의 실시예에 따른 액상 박막 결정 성장장치를 이용한 액상 박막 결정 성장공정도와 그에 따른 온도분포도.

Claims (2)

  1. 석영관(22) 내부에 기판홀더(23)와 복수개의 용융액홀도(27,28)와 용융액홀더 지지판(24)으로 구성된 보우트가 있고 석영관(22) 외부에 전기로(21)가 설치된 액상 결정 성장장치에 있어서, 각 용융액홀더(27,28)를 필요한 만큼 분리시켜 배치하고 각각의 용융액홀더(27,28)에 보조가열기(31,32)를 설치하여 각 용융액을 선택적으로 가열하고 냉각시킬수 있음을 특징으로 하는 액상 결정 성장장치.
  2. 슬라이드식 액상 결정 성장방법에 있어서, 특정 분위기의 반응관(21)내에 보우트를 삽입하고 나서 주가열전기로(21)를 제1온도상태까지 가열하고 보조가열기(31,32)를 이용하여 제1용융액(29)과 제2용융액(30)의 온도를 내용물이 충분히 용융되는 온도인 제2온도상태로 높이는 제1공정과, 기판홀더(23)를 슬라이드시켜 제1기판(25)를 제1용융액(29)과 접촉시키고 제1용융액(29)의 온도만을 제3온도상태로 내려서 제1기판(25)상에 제1층 결정 성장을 시키는 제2공정과, 제1기판(25)상에 소정두께의 결정 성장이 끝난 후 기판홀더(23)를 슬라이드시켜 제1기판(25)과 제1용융액을 분리하고 제1용융액의온도가 다시 제1온도상태가 되도록 제1보조가열기를 가열하는 제3공정과, 기판홀더(23)를 슬라이드시켜 제1기판(25)을 제2용융액(30)에 접촉시키고 제2기판(26)은 제1용융액(29)에 접촉시켜 제1용융액(29)은 제3온도상태로 내리고 제2용융액(30)은 제4온도상태로 내려서 제1기판(25)상에는 제2층 결정 성장을 시키고 제2기판(26)상에는 제1층 결정 성장을 시킨후 기판홀더(23)를 슬라이드시켜 용융액(29,30)과 기판(26,25)을 각각 분리하여 결정 성장을 중단하는 제4공정을 구비하여 반복 실시함으로써 다수 결정층 성장시 복수개의 용융액홀더를 사용하여 복수개의 기판상에 동일한 조건의 다수 결정 성장층을 형성함을 특징으로 하는 액상 결정 성장방법.
    ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR870001489A 1987-02-21 1987-02-21 액상 박막 결정 성장방법 및 장치 KR880010481A (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR870001489A KR880010481A (ko) 1987-02-21 1987-02-21 액상 박막 결정 성장방법 및 장치
JP63034124A JPS63209122A (ja) 1987-02-21 1988-02-18 液相薄膜結晶成長方法及び装置
US07/157,981 US4918029A (en) 1987-02-21 1988-02-19 Method for liquid-phase thin film epitaxy
US07/509,300 US5068516A (en) 1987-02-21 1990-04-16 Device for liquid-phase thin film epitaxy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR870001489A KR880010481A (ko) 1987-02-21 1987-02-21 액상 박막 결정 성장방법 및 장치

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US (2) US4918029A (ko)
JP (1) JPS63209122A (ko)
KR (1) KR880010481A (ko)

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Also Published As

Publication number Publication date
US5068516A (en) 1991-11-26
JPS63209122A (ja) 1988-08-30
US4918029A (en) 1990-04-17

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