KR880003177A - 반도체 압력센서 - Google Patents

반도체 압력센서 Download PDF

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Publication number
KR880003177A
KR880003177A KR1019870008157A KR870008157A KR880003177A KR 880003177 A KR880003177 A KR 880003177A KR 1019870008157 A KR1019870008157 A KR 1019870008157A KR 870008157 A KR870008157 A KR 870008157A KR 880003177 A KR880003177 A KR 880003177A
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KR
South Korea
Prior art keywords
pressure sensor
circuit
bridge circuit
semiconductor pressure
bridge
Prior art date
Application number
KR1019870008157A
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English (en)
Other versions
KR920001226B1 (ko
Inventor
아츠시 미야자키
료이치 고바야시
Original Assignee
미타 가츠시게
가부시키가이샤 히타치세이사쿠쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미타 가츠시게, 가부시키가이샤 히타치세이사쿠쇼 filed Critical 미타 가츠시게
Publication of KR880003177A publication Critical patent/KR880003177A/ko
Application granted granted Critical
Publication of KR920001226B1 publication Critical patent/KR920001226B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/02—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning
    • G01L9/06—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices
    • G01L9/065—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in ohmic resistance, e.g. of potentiometers, electric circuits therefor, e.g. bridges, amplifiers or signal conditioning of piezo-resistive devices with temperature compensating means

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

내용 없음

Description

반도체 압력센서
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명에 의한 반도체 압력센서의 일실시예를 나타내는 회로도.
제2도는 제1도의 브리지회로가 형성된 실리콘기판을 나타내는 사시도.
제3도는 본원 발명을 설명하기 위한 실리콘기판상에 형성된 확산 저항의 표면 불순물농도와 감도온도계수 변화율의 관계를 나타내는 특성도. 여기에서 감도온도계수 변화율을 -40℃ 내지 125℃의 감도계수변화율은 100℃당 감도계수변화율로 환산함으로써 얻는다.

Claims (2)

  1. 인가압력에 의하여 표면장력이 변화하는 실리콘 단결정 탄성기판(20)과 상기 기판 표면에 P형 확산층으로 형성된 변형게이지(1)와 이 변형게이지를 포함하는 브리지회로(2)와, 상기 브리지회로에 구동전류를 공급하기 위한 정전류회로(5)와, 상기 브리지회로의 출력단자(D),(E)의 브리지출력을 증폭하여 출력신호를 형성하는 증폭회로(7)로 이루어지는 반도체 압력센서에 있어서, 상기 브리지회로(2)를 구성하는 변형게이지(RG1, RG2, RG3, RG4)는 그 표면 불순몰농도가 2.3X1018내지 2.5X1018atoms/㎤인 확산저항층으로 형성되고, 상기 확산저항층의 온도변화율에 대략 유사한 온도저항특성을 가진 서미스터는 상기 정전류회로내에 포함되고, 이들의 특성을 상호간 상쇄함으로써 감도온도보상을 하는 것을 특징으로 하는 반도체 압력센서.
  2. 제1항에 있어서, 상기 서미스터의 B정수는 1400K 내지 2400K가 되도록 선정되는 것을 특징으로 하는 반도체 압력센서.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870008157A 1986-08-01 1987-07-27 반도체 압력센서 KR920001226B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61-179983 1986-08-01
JP179983 1986-08-01
JP61179983A JPH0691265B2 (ja) 1986-08-01 1986-08-01 半導体圧力センサ

Publications (2)

Publication Number Publication Date
KR880003177A true KR880003177A (ko) 1988-05-14
KR920001226B1 KR920001226B1 (ko) 1992-02-06

Family

ID=16075402

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870008157A KR920001226B1 (ko) 1986-08-01 1987-07-27 반도체 압력센서

Country Status (6)

Country Link
US (1) US4813272A (ko)
JP (1) JPH0691265B2 (ko)
KR (1) KR920001226B1 (ko)
DE (1) DE3725311A1 (ko)
FR (1) FR2602335B1 (ko)
GB (1) GB2193577B (ko)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
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DE3612810A1 (de) * 1986-04-16 1987-10-22 Bosch Gmbh Robert Schaltungsanordnung zur messung einer mechanischen verformung, insbesondere unter einwirkung eines drucks
JPH0777266B2 (ja) * 1988-12-28 1995-08-16 株式会社豊田中央研究所 半導体歪み検出装置
DE3925177A1 (de) * 1989-07-27 1991-02-07 Siemens Ag Schaltungsanordnung zur temperaturstabilen verstaerkung einer differenzspannung
GB2238132A (en) * 1989-11-13 1991-05-22 Nat Res Dev Transducer power supply
US5178016A (en) * 1989-11-15 1993-01-12 Sensym, Incorporated Silicon pressure sensor chip with a shear element on a sculptured diaphragm
US5259248A (en) * 1990-03-19 1993-11-09 Hitachi Ltd. Integrated multisensor and static and differential pressure transmitter and plant system using the integrated multisensor
JP2595829B2 (ja) * 1991-04-22 1997-04-02 株式会社日立製作所 差圧センサ、及び複合機能形差圧センサ
US5343755A (en) * 1993-05-05 1994-09-06 Rosemount Inc. Strain gage sensor with integral temperature signal
DE4334080C2 (de) * 1993-10-06 1996-05-02 Telefunken Microelectron Piezoresistive Sensorstruktur
US8280682B2 (en) 2000-12-15 2012-10-02 Tvipr, Llc Device for monitoring movement of shipped goods
US7386401B2 (en) * 1994-11-21 2008-06-10 Phatrat Technology, Llc Helmet that reports impact information, and associated methods
US6266623B1 (en) * 1994-11-21 2001-07-24 Phatrat Technology, Inc. Sport monitoring apparatus for determining loft time, speed, power absorbed and other factors such as height
US7171331B2 (en) 2001-12-17 2007-01-30 Phatrat Technology, Llc Shoes employing monitoring devices, and associated methods
JP2003294559A (ja) 2002-03-29 2003-10-15 Denso Corp センサ回路
JP3969228B2 (ja) * 2002-07-19 2007-09-05 松下電工株式会社 機械的変形量検出センサ及びそれを用いた加速度センサ、圧力センサ
US20040016981A1 (en) * 2002-07-26 2004-01-29 Matsushita Electric Works, Ltd. Semiconductor acceleration sensor using doped semiconductor layer as wiring
JP3915715B2 (ja) * 2003-03-07 2007-05-16 株式会社デンソー 半導体圧力センサ
US7171880B2 (en) * 2004-11-19 2007-02-06 Powell Michael S Dust collection for panel saw
US20060225550A1 (en) * 2004-08-31 2006-10-12 Sam Walters Control system method of operation for electric power tools
JP2010107500A (ja) * 2008-09-30 2010-05-13 Ngk Spark Plug Co Ltd 圧力検出装置
US8878598B2 (en) 2010-12-28 2014-11-04 British Virgin Islands Central Digital Inc. Sensing module
TW201227753A (en) * 2010-12-28 2012-07-01 British Virgin Islands Central Digital Inc Sensor temperature compensation circuit and method thereof
CN106197814B (zh) * 2016-09-10 2018-12-18 杭州电子科技大学 一种基于双桥臂稳流的电阻应变式张力检测电路

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7414459A (nl) * 1974-11-06 1976-05-10 Philips Nv Drukopnemer.
JPS5453877A (en) * 1977-10-07 1979-04-27 Hitachi Ltd Temperature compensation circuit of semiconductor strain gauge
JPS55113904A (en) * 1979-02-26 1980-09-02 Hitachi Ltd Method of zero point temperature compensation for strain-electric signal transducer
JPS58140604A (ja) * 1982-02-17 1983-08-20 Hitachi Ltd 温度補償回路付き集積化センサ
JPS5961736A (ja) * 1982-10-01 1984-04-09 Hitachi Ltd 集積化圧力センサ
DE3503489A1 (de) * 1985-01-30 1986-07-31 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zur kompensation der temperaturabhaengigkeit von empfindlichkeit und nullpunkt eines piezoresistiven drucksensors
JPH113379A (ja) * 1997-06-10 1999-01-06 Oki Electric Ind Co Ltd 自動取引装置

Also Published As

Publication number Publication date
JPS6337673A (ja) 1988-02-18
GB8717779D0 (en) 1987-09-03
KR920001226B1 (ko) 1992-02-06
FR2602335B1 (fr) 1990-12-28
FR2602335A1 (fr) 1988-02-05
US4813272A (en) 1989-03-21
GB2193577B (en) 1990-04-18
DE3725311C2 (ko) 1991-12-19
DE3725311A1 (de) 1988-02-04
JPH0691265B2 (ja) 1994-11-14
GB2193577A (en) 1988-02-10

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