KR880000137A - 저온 플라즈마를 이용한 분말처리 방법 및 장치 - Google Patents

저온 플라즈마를 이용한 분말처리 방법 및 장치 Download PDF

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KR880000137A
KR880000137A KR1019870006282A KR870006282A KR880000137A KR 880000137 A KR880000137 A KR 880000137A KR 1019870006282 A KR1019870006282 A KR 1019870006282A KR 870006282 A KR870006282 A KR 870006282A KR 880000137 A KR880000137 A KR 880000137A
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powder
temperature plasma
low temperature
processing apparatus
processing
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KR1019870006282A
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KR900005172B1 (ko
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쯔쯔이 고이찌
이께다 쇼오지
니시자와 고오지
야끼 마꼬도
구보 노부아끼
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스즈기 마사오
닙튼 페인트 가브시기 가이샤
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Priority claimed from JP61145923A external-priority patent/JPS631444A/ja
Priority claimed from JP9897587A external-priority patent/JPH0757314B2/ja
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Abstract

내용 없음

Description

저온 플라즈마를 이용한 분말처리 방법 및 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 첫째 발명인 분말처리 방법을 실시하는데 사용된 고속회전진 등의 이용에 근거한 장치의 일례를 설명한 다이어그램.
제 4 도는 첫번째 발명을 실시하는데 사용되는 진등에 의해 생긴 유등층의 이용에 근거한 장치의 일례를 설명한 다이어그램,
제 7 도는 두번째 발명인 분말 처리장치의 일례를 나타낸 일부 절개 평면도.

Claims (19)

  1. 분말은 저온 플라즈마로 처리하고 진등으로 교반함을 특징으로 한 분말처리 방법.
  2. 제 1 항에 있어서, 진등수가 10Hz 이상인 분말 처리 방법.
  3. 제 1 항 또는 제 2 항에 있어서, 분말을 RF 방전에 의해 발생된 저온 플라즈마 가스체에 노출시키는 것을 포함하는 저온 플라즈마 처리 방법을 갖는 분말 처리 방법.
  4. 제 1 항 또는 제 2 항에 있어서, 초고주파 방전에 의해 발생된 저온 플라즈마 가스체에 생성된 활성체를 분말에 뿜는 것을 포함하는 저온 플라즈마 처리 방법을 갖는 분말 처리 방법.
  5. 제 1 항부터 제 4 항까지의 어느 한항에 있어서, 진등으로 분말이 유동층을 형성하게하는 것을 포함하는 진등에 의한 분말의 교반 방법을 갖는 분말 처리 방법.
  6. 제 1 항부터 제 5 항까지의 어느 한항에 있어서, 분말을 처리하기 전에 미리 분말의 습기를 제거하는 분말 처리 방법.
  7. 제 1 항부터 제 5 항까지의 어느 한항에 있어서, 처리될 분말을 주어진 입자 지름보다 적은 것으로 분류하는 분말 처리 방법.
  8. 분말을 저장하는 처리실과, 이 처리실을 진동시키는 수단과, 플라즈마 발생시키는 수단이 설치되어있고, 상기 처리실에 있는 분말을 진등으로 교반하여 저온 플라즈마로서 처리함에 있어서, 상기 처리실을 상부 및 하부 두 용기로서 상, 하부의 개구를 결합시켜 형성하고, 상기 상부 및 하부용기를 전기적으로절연시키기 위해 접합부에 절연체를 마련하여 상기 두 용기를 상호 마주보는 여기 전극과 접지 전극으로 이용함을 특징으로 한 분말 처리 방법.
  9. 제 8 항에 있어서, 진동 수단이 수압진동 모우터인 분말 처리 장치.
  10. 제 8 항 또는 제 9 항에 있어서, 상부 및 하부 두 용기중 하부용기는 여기 전극이고, 상부용기는 접지 전극인 분말 처리 장치.
  11. 제 8 항부터 제10항까지의 어느 한항에 있어서, 상부 및 하부 두 용기 중 여기 전극으로 사용되는 용기의 주위에 마련된 전자기파 차폐물을 갖는 분말 처리 장치.
  12. 제 8 항부터 제11항까지의 어느 한항에 있어서 상부 및 하부용기로 결합된 처리실의 지름대 높이의 비가 9 : 1-1 : 3의 범위인 분말 처리 장치.
  13. 제 8 항부터 제12항까지의 어느 한항에 있어서, 분말처리를 위한 가스를 유도하는 가스관이 접지 전극으로 사용되는 용기에 마련된 분말 처리 장치.
  14. 제 8 항부터 제13항까지의 어느 한항에 있어서, 가스관의 일단이 처리실내의 분말 표면으로부터 60cm 이하로 떨어져 있는 분말 처리 장치.
  15. 제 8 항부터 제14항까지의 어느 한항에 있어서, 다수의 가스관의 연결된 분말 처리 장치.
  16. 제 8 항부터 제15항까지의 어느 한항에 있어서, 가스관이 절연체로 형성되거나 절연 재료로 코팅된금속관인 분말 처리 장치.
  17. 분말을 회전하는 스파이럴 스크류의 세차운동으로 교반하여 저온 플라즈마 처리함을 특징으로 한분말 처리 방법.
  18. 제17항에 있어서, 분말을 RF 방전에 의해 발생된 저온 플라즈마 가스체에 노출시키는 저온 플라즈마 처리방법을 포함하는 분말 처리 방법.
  19. 제17항에 있어서, 초고주파 방전에 의해 발생된 저온 플라즈마 가스체에 생성된 활성체를 분말에 뿜는 저온 플라즈마 처리 방법을 포함하는 분말 처리 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870006282A 1986-06-20 1987-06-20 저온 플라즈마를 이용한 분말처리 방법 및 장치 KR900005172B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP61145923A JPS631444A (ja) 1986-06-20 1986-06-20 粉体処理方法
JP145923 1986-06-20
JP61-145923 1986-06-20
JP145922 1986-06-20
JP61-145922 1986-06-20
JP14592286 1986-06-20
JP62-098975 1987-04-21
JP9897587A JPH0757314B2 (ja) 1986-06-20 1987-04-21 粉体処理方法および装置
JP098975 1987-04-21

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KR880000137A true KR880000137A (ko) 1988-03-23
KR900005172B1 KR900005172B1 (ko) 1990-07-20

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US (1) US4867573A (ko)
EP (1) EP0254424B1 (ko)
KR (1) KR900005172B1 (ko)
AU (1) AU609401B2 (ko)
CA (1) CA1327769C (ko)
DE (1) DE3774350D1 (ko)

Cited By (1)

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KR20160082844A (ko) * 2014-12-29 2016-07-11 삼성에스디아이 주식회사 분체 혼합 및 미분 제어 장치

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EP0254424A2 (en) 1988-01-27
US4867573A (en) 1989-09-19
EP0254424A3 (en) 1989-03-08
EP0254424B1 (en) 1991-11-06
DE3774350D1 (de) 1991-12-12
AU609401B2 (en) 1991-05-02

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