KR870004320A - 전력을 발생시키는 광학필터 - Google Patents

전력을 발생시키는 광학필터 Download PDF

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KR870004320A
KR870004320A KR1019860008482A KR860008482A KR870004320A KR 870004320 A KR870004320 A KR 870004320A KR 1019860008482 A KR1019860008482 A KR 1019860008482A KR 860008482 A KR860008482 A KR 860008482A KR 870004320 A KR870004320 A KR 870004320A
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filter
photovoltaic
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알. 오브신스키 스탠포드
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로렌스지이. 노리스
에너지 컨버션 디바이시즈, 인코퍼레이티드
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
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    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
    • B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
    • B32B17/10—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin
    • B32B17/10005—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing
    • B32B17/1055—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer
    • B32B17/10678—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material of synthetic resin laminated safety glass or glazing characterized by the resin layer, i.e. interlayer comprising UV absorbers or stabilizers, e.g. antioxidants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
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Abstract

내용 없음

Description

전력을 발생시키는 광학필터
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 횡좌표에 상대적인 강도를 나타내고 종좌표에 파장을 나타낸 그래프로서, 상기 그래프가 태양스펙트럼의 파장의 정규화강도 및 각 파장영역에 의해 형성된 색을 도시하는 것이다.
제2C도는 각 전도영역의 무질서한 충돌이 교대로 반복하는 것을 도시하는 제2B도의 직렬광전지 디바이스의 셀 1C의 확대된 부분단면도이다.
제11A도는 광학동조층을 포함하는 본 발명의 또 다른 전력을 발생시키는 광학필터의 확대된 단면도이다.
도면의 주요부분에 대한 설명
1:광전지, 2:기판, 6:TCO영역, 7:그리드전극, 8:광선, 30:광학필터, 34:제1전극, 36:광전지재료체, 38:제2전극, 40:광학필터, 44:제1부층, 46:제2부층, 48:투명층, 52:캡슐층, 62:접착재료층, 64:보호층, 74:공기갭, 92:후방차창, 94:버스그리드패턴, 96:버스바(busbar), 98:그리드-핑거(grid-finger), 102:유리패널, 114:렌즈틀, 152:광학동조층.

Claims (16)

  1. 투명한 기판, 상기 기판의 최소한 정해진 면적위에 배치된 실질적으로 투명한 제1전극, 상기 제1전극위에 배치된 광전지재료체 및 상기 광전지재료체위에 배치된 실질적으로 투명한 제2전극을 포함하는 전력을 발생시키는 광학필터에 있어서, 상기 제1 및 제2전극과 광전지재료체가 (1)전자-정공 쌍들을 발생하여 수집하고 (2) 이곳에 입사한 방사의 선택된 파장들의 최소한 일부분을 투과시키도록 협력하여, 상기 투과된 파장들의 주파수가 동일하거나 또는 실질적으로 유사한 조성의 광전지재료체를 통하여 투과되는 파장들의 주파수와 실질적으로 상이함을 특징으로 하는 전력을 발생시키는 광학필터.
  2. 제1항에 있어서, 파장들의 투과가 가시적 스펙트럼의 중요한 부분위에서 실질적으로 균일하게 되는 필터.
  3. 제2항에 있어서, 가시적 스펙트럼의 중요한 부분이 450에서 800나노미터가 되는 필터.
  4. 제1항에 있어서, 원하는 색의 광을 투과하기 위하여 광전지체 및 전극들이 가시적 스펙트럼의 미리 선택된 파장에서 흡수한계를 나타내도록 조정되는 필터.
  5. 제1항에 있어서, 운반수단의 전기적 성분으로 동작하도록 적합된 광전지체에 의해 발생된 전력이 동력설비의 차 창으로서 사용되기 위하여 적합되는 필터.
  6. 제1항에 있어서, 빌딩과 관련된 전기적 설비로 동작하도록 적합된 광전지체에 의해 발생된 전력이 빌딩의 창들로서 사용되기 위하여 적합되는 필터.
  7. 제1항에 있어서, 제2전극의 노출된 표면위에 배치된 실질적으로 투명한 캡슐층을 더욱 포함하는 필터.
  8. 제1항에 있어서, 기판이 반투명이 되는 필터.
  9. 제1항에 있어서, 상기 기판이 가열되는 것을 막기 위하여 필터의 최소한 일부분에 외부적으로 공급된 전류를 투과시키기 위한 수단을 더욱 포함하는 필터.
  10. 제1항에 있어서, 인접한 몰체(body)들 사이에 오믹하게 배치된 투명하고, 전기적으로 전도성층과 제2광전지체를 더욱 포함하는 필터.
  11. 제10항에 있어서, 이 몰체들이 태양스펙트럼의 상이한 파장들을 흡수하기 위하여 최적밴드갭을 갖는 광전지영역들을 포함하는 필터.
  12. 제1항에 있어서, 적외선방사의 실질적인 부분들의 투과를 막기 위하여, 적외선 반사체를 더욱 포함하는 필터.
  13. 제12항에 있어서, 상기 적외선 반사체가 열 밀러(heat mirror)이고 전기적으로 투명한 전도성 재료들 얇은 금속막들 및 이것들의 조합들로 필수적으로 구성된 그룹으로부터 선택된 재료층을 포함하는 필터.
  14. 제1항에 있어서, 적외선 방사의 실질적인 부분들의 투과를 막기 위하여, 적외선 흡수층을 더욱 포함하는 필터.
  15. 제1항에 있어서, 광학 동조층을 더욱 포함하며, 적당한 두께의 상기층이 필터의 투과를 변경하도록 적합되는 필터.
  16. 제1항에 있어서, 카메라와 관련된 전자적회로를 구동하도록 적합된 광전지체에 의해 발생된 전력이 카메라렌즈로서 사용되기 적합되는 필터.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860008482A 1985-10-11 1986-10-10 전력을 발생시키는 광학 필터 KR950000109B1 (ko)

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Application Number Priority Date Filing Date Title
US786,579 1985-10-11
US06/786,579 US4642413A (en) 1985-10-11 1985-10-11 Power generating optical filter
US806,232 1985-12-06
US06/806,232 US4713493A (en) 1985-10-11 1985-12-06 Power generating optical filter

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KR870004320A true KR870004320A (ko) 1987-05-08
KR950000109B1 KR950000109B1 (ko) 1995-01-09

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CA (1) CA1268973A (ko)
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CA1268973A (en) 1990-05-15
KR950000109B1 (ko) 1995-01-09
AU6350886A (en) 1987-04-16
EP0218997A2 (en) 1987-04-22
JPS6293982A (ja) 1987-04-30
EP0218997A3 (en) 1989-07-05
JP2575667B2 (ja) 1997-01-29
JP2752924B2 (ja) 1998-05-18
DE3688772D1 (ko) 1993-09-02
US4713493A (en) 1987-12-15
EP0218997B1 (en) 1993-07-28
DE3688772T2 (de) 1993-11-11
IN166970B (ko) 1990-08-11
JPH0856007A (ja) 1996-02-27

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