KR870002644A - 반도체 결점 검출방법 - Google Patents

반도체 결점 검출방법 Download PDF

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Publication number
KR870002644A
KR870002644A KR1019860006366A KR860006366A KR870002644A KR 870002644 A KR870002644 A KR 870002644A KR 1019860006366 A KR1019860006366 A KR 1019860006366A KR 860006366 A KR860006366 A KR 860006366A KR 870002644 A KR870002644 A KR 870002644A
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South Korea
Prior art keywords
semiconductor
modulated
region
defect detection
light beam
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KR1019860006366A
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English (en)
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KR950010389B1 (ko
Inventor
어네스트 카버 게리
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오레그 이. 앨버
아메리칸 텔리폰 앤드 텔레그라프 캄파니
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Publication of KR870002644A publication Critical patent/KR870002644A/ko
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Publication of KR950010389B1 publication Critical patent/KR950010389B1/ko

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1717—Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
    • G01N2021/1719—Carrier modulation in semiconductors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited

Abstract

내용 없음

Description

반도체 결점 검출방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 결점 검출 시스템의 개략도.
제3도는 본 결점 검출 시스템의 블럭선도.
* 도면의 주요부분에 대한 부호의 설명
12 : 펌프 레이저 14 : 검사 레이저 18 : 검출기
58 : 갈바노미터 미터 77 : 컴퓨터 78 : 주사 제어기
82 : 비데 오스크

Claims (8)

  1. 반도체 재질의 표면 또는 그 부근에서 개개의 결점을 검출하는 방법에 있어서, 반도체 재질의 밴드갭 에너지 이하의 에너지 레벨을 갖는 단색광의 적외선 빔을 반도체표면의 제1영역으로 향하게 하는 단계와, 반도체 재질의 밴드갭 에너지 이상의 에너지 레벨을 갖는 단색광의 시간 변조된 빔을 반도체 표면쪽으로 동시에 향하게 하는 단계와,
    제1영역내에서 제1영역보다 작은 제2영역에 시간 변조된 광선빔을 집속시켜서 상기 표면에 의해 흡수된 빔의 에너지를 상기 재질표면 또는 그 부근에 있는 전자 및 홀을 여기시켜 상기 표면의 반사도를 변화시키는 단계와,
    상기 반도체 표면으로부터 반사된 적외선 빔의 세기를 검출하는 단계와,
    시간 변조된 광선빔의 주파수에서 변조 검출된 적외선 빔 세기만을 처리하여 반도체 표면 또는 그 부근에서 결점을 찾아내는 단계를 구비하는 것을 특징으로 하는 반도체 결점 검출방법.
  2. 제1항에 있어서,
    제2영역내에서 제1영역을 이동시키기 위해 상기 상위 밴드 광선 빔을 라스터 주사하는 단계와, 변조된 주파수에서 표면으로부터 반사된 하위 밴드갭광선빔으로부터 나온 광선의 세기를 검출하는 단계를 구비하는 것을 특징으로 하는 반도체 결점 검출방법.
  3. 제1항에 있어서,
    상기 제1영역은 약 0.126평형릴리이며,
    제2영역은 직경이 약 1내지 2미크론의 스포트인 것을 특징으로 하는 반도체 결점 검출방법.
  4. 제1항에 있어서,
    상기 반도체 재질은 실리콘인 것을 특징으로로 하는 반도체 결점 검출방법.
  5. 제1항에 있어서,
    상기 반도체 재질은 Inp인 것을 특징으로하는 반도체 결점 검출방법.
  6. 제1항에 있어서,
    반도체 재질은 InGaAsP인 것을 특징으로하는 반도체 결점 검출방법.
  7. 제1항에 있어서,
    검사빔은 상기 표면에 수직인 평면에 대해 79도로 반도체 표면에 대해 입사각을 갖는 것을 특징으로하는 반도체 결점 검출방법.
  8. 제1항에 있어서,
    시간 변조된 빔은 아르곤 레이저에 의해 발생이 되며,
    적외선 빔은 CO2레이저에 의해 발생되는 것을 특징으로하는 반도체 결점 검출방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860006366A 1985-08-02 1986-08-01 반도체 결함 검출 방법 KR950010389B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US762,086 1985-08-02
US06/762,086 US4652757A (en) 1985-08-02 1985-08-02 Method and apparatus for optically determining defects in a semiconductor material
US762089 1985-08-02

Publications (2)

Publication Number Publication Date
KR870002644A true KR870002644A (ko) 1987-04-06
KR950010389B1 KR950010389B1 (ko) 1995-09-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860006366A KR950010389B1 (ko) 1985-08-02 1986-08-01 반도체 결함 검출 방법

Country Status (6)

Country Link
US (1) US4652757A (ko)
EP (1) EP0211590B1 (ko)
JP (1) JPS6258143A (ko)
KR (1) KR950010389B1 (ko)
CA (1) CA1243418A (ko)
DE (1) DE3679250D1 (ko)

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Also Published As

Publication number Publication date
CA1243418A (en) 1988-10-18
DE3679250D1 (de) 1991-06-20
JPS6258143A (ja) 1987-03-13
EP0211590B1 (en) 1991-05-15
EP0211590A2 (en) 1987-02-25
KR950010389B1 (ko) 1995-09-16
JPH0535983B2 (ko) 1993-05-27
US4652757A (en) 1987-03-24
EP0211590A3 (en) 1988-04-20

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