KR870001654A - 바이폴러트랜지스터의 제조방법 - Google Patents
바이폴러트랜지스터의 제조방법 Download PDFInfo
- Publication number
- KR870001654A KR870001654A KR1019850005045A KR850005045A KR870001654A KR 870001654 A KR870001654 A KR 870001654A KR 1019850005045 A KR1019850005045 A KR 1019850005045A KR 850005045 A KR850005045 A KR 850005045A KR 870001654 A KR870001654 A KR 870001654A
- Authority
- KR
- South Korea
- Prior art keywords
- bipolar transistor
- manufacturing
- diffused
- emitter
- collector base
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 238000000034 method Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Bipolar Transistors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
내용 없음.
Description
제2도는 본 발명방법에 의한 구성도.
제3도는 본 발명방법에 의한 반도체측정시 회로도.
Claims (1)
- 바이폴러 트랜지스터 제고 공정중 에미터(1) 확산시에 베이스영역 (2)에 에미터용 확산물을 확산하여 다이오드 접합(3)을 형성한후, 에미커-베이스 단자에 순방향 바이어스가 콜랙터베이스 사이에는 역방향 바이어스가 공급되도록하여 트랜지스터의 전류이득(β)을 측정하여 양부판정을 한후 접촉개방 공정을 실시하는 바이폴러 트랜지스터의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019850005045A KR880001792B1 (ko) | 1985-07-16 | 1985-07-16 | 바이폴리 트랜지스터의 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019850005045A KR880001792B1 (ko) | 1985-07-16 | 1985-07-16 | 바이폴리 트랜지스터의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR870001654A true KR870001654A (ko) | 1987-03-17 |
| KR880001792B1 KR880001792B1 (ko) | 1988-09-17 |
Family
ID=19241844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019850005045A KR880001792B1 (ko) | 1985-07-16 | 1985-07-16 | 바이폴리 트랜지스터의 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR880001792B1 (ko) |
-
1985
- 1985-07-16 KR KR1019850005045A patent/KR880001792B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR880001792B1 (ko) | 1988-09-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR880001058A (ko) | 헤테로 접합형 바이폴러트랜지스터의 제조방법 | |
| KR870001654A (ko) | 바이폴러트랜지스터의 제조방법 | |
| ATE74228T1 (de) | Verfahren zur herstellung von halbleiterschaltungen um einen bipolaren transistor mit extrinsischen basengebieten zu bilden. | |
| DE3781285D1 (de) | Bipolarer heterouebergangstransistor mit einem basisbereich aus germanium. | |
| EP0378164A3 (en) | Bipolar transistor and method of manufacturing the same | |
| KR880013256A (ko) | 헤테로접합형 바이폴라트랜지스터 및 그 제조방법 | |
| EP0077921A3 (en) | Semiconductor device | |
| JPS52114280A (en) | Bipolar type transistor | |
| JPS5357723A (en) | Interface circuit | |
| JPS5297683A (en) | Semiconductor circuit device | |
| JPS5735366A (en) | Semiconductor integrated circuit device | |
| SE8304013D0 (sv) | Multipel transistor | |
| KR870005475A (ko) | 정전압 다이오드의 제작방법 | |
| KR870001649A (ko) | 반도체소자 제조방법 | |
| KR880014689A (ko) | 쌍극성 반전 채널 전계효과 트랜지스터(bicfet) | |
| JPS5654062A (en) | Production of semiconductor device | |
| JPS57199251A (en) | Semiconductor device | |
| JPS5658260A (en) | Darlington junction type transistor and production thereof | |
| KR890011085A (ko) | 반도체소자 제조방법 | |
| KR900002468A (ko) | 고주파 바이폴라 트랜지스터의 제조방법 | |
| JPS6480064A (en) | Semiconductor device | |
| JPS54878A (en) | Test method for unijunction transistor | |
| KR870001658A (ko) | 반도체집적회로의 구조 및 제조방법 | |
| KR890017812A (ko) | 트랜지스터 제조방법 | |
| JPS6435951A (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E902 | Notification of reason for refusal | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20000821 Year of fee payment: 13 |
|
| LAPS | Lapse due to unpaid annual fee |