KR870001649A - 반도체소자 제조방법 - Google Patents

반도체소자 제조방법 Download PDF

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Publication number
KR870001649A
KR870001649A KR1019850005046A KR850005046A KR870001649A KR 870001649 A KR870001649 A KR 870001649A KR 1019850005046 A KR1019850005046 A KR 1019850005046A KR 850005046 A KR850005046 A KR 850005046A KR 870001649 A KR870001649 A KR 870001649A
Authority
KR
South Korea
Prior art keywords
semiconductor device
device manufacturing
manufacturing
cooh
saturated
Prior art date
Application number
KR1019850005046A
Other languages
English (en)
Other versions
KR880000668B1 (ko
Inventor
고석윤
Original Assignee
허신구
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 허신구, 주식회사 금성사 filed Critical 허신구
Priority to KR1019850005046A priority Critical patent/KR880000668B1/ko
Publication of KR870001649A publication Critical patent/KR870001649A/ko
Application granted granted Critical
Publication of KR880000668B1 publication Critical patent/KR880000668B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H01L21/145—Ageing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Gerontology & Geriatric Medicine (AREA)
  • Wire Bonding (AREA)
  • Weting (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음.

Description

반도체소자 제조방법
제1도는 가-마는 반도체소자 제조방법의 공정도.

Claims (1)

  1. 초산(H3COOH)에 알루미늄 아세테이트를 포화시키고 이용액에 불화질산(NH4F)을 1:0.8-1 의 비율로 혼합한후 제공정이 끝난 반도체소자는 패드에칭하여 된 반도체소자 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850005046A 1985-07-16 1985-07-16 반도체 소자 제조방법 KR880000668B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019850005046A KR880000668B1 (ko) 1985-07-16 1985-07-16 반도체 소자 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019850005046A KR880000668B1 (ko) 1985-07-16 1985-07-16 반도체 소자 제조방법

Publications (2)

Publication Number Publication Date
KR870001649A true KR870001649A (ko) 1987-03-17
KR880000668B1 KR880000668B1 (ko) 1988-04-20

Family

ID=19241846

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850005046A KR880000668B1 (ko) 1985-07-16 1985-07-16 반도체 소자 제조방법

Country Status (1)

Country Link
KR (1) KR880000668B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020017712A (ko) * 2000-08-31 2002-03-07 곽무영 외부 순환형 생물반응장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020017712A (ko) * 2000-08-31 2002-03-07 곽무영 외부 순환형 생물반응장치

Also Published As

Publication number Publication date
KR880000668B1 (ko) 1988-04-20

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