JPS5336470A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5336470A JPS5336470A JP11078576A JP11078576A JPS5336470A JP S5336470 A JPS5336470 A JP S5336470A JP 11078576 A JP11078576 A JP 11078576A JP 11078576 A JP11078576 A JP 11078576A JP S5336470 A JPS5336470 A JP S5336470A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- psg
- bipolar transistor
- continuous holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To obtain a device which can set a free concentration of PSG for the bipolar transistor coated with PSG and which has small continuous holes.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11078576A JPS6058581B2 (en) | 1976-09-17 | 1976-09-17 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11078576A JPS6058581B2 (en) | 1976-09-17 | 1976-09-17 | Manufacturing method of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5336470A true JPS5336470A (en) | 1978-04-04 |
JPS6058581B2 JPS6058581B2 (en) | 1985-12-20 |
Family
ID=14544554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11078576A Expired JPS6058581B2 (en) | 1976-09-17 | 1976-09-17 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6058581B2 (en) |
-
1976
- 1976-09-17 JP JP11078576A patent/JPS6058581B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS6058581B2 (en) | 1985-12-20 |
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