KR860009482A - 에피택셜절연막을 가진 반도체장치 및 그 제조방법 - Google Patents

에피택셜절연막을 가진 반도체장치 및 그 제조방법 Download PDF

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Publication number
KR860009482A
KR860009482A KR1019860004025A KR860004025A KR860009482A KR 860009482 A KR860009482 A KR 860009482A KR 1019860004025 A KR1019860004025 A KR 1019860004025A KR 860004025 A KR860004025 A KR 860004025A KR 860009482 A KR860009482 A KR 860009482A
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KR
South Korea
Prior art keywords
insulating film
semiconductor device
rare earth
metal oxide
crystal structure
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KR1019860004025A
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English (en)
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KR900001667B1 (ko
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가즈마사 다까기
겐조오 스사
도시오 고바야시
다까노부 다까야마
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가부시기가이샤 히다찌세이사구쇼
미따 가쯔시게
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Publication of KR860009482A publication Critical patent/KR860009482A/ko
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Publication of KR900001667B1 publication Critical patent/KR900001667B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02192—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition

Abstract

내용 없음

Description

에피택셜절연막을 가진 반도체장치 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 절연막의 형성에 사용한 진공증착장치의 일례의 개략설명도.
제2도는 본 발명의 일례의 자업공정도.
제3도는 본 발명의 일실시예의 반도체 장치의 단면도.
* 도면의 주요부분에 대한 부호의 설명
1 : 진공증착장치 2 : 기판지지대 3 : 기판
4 : 보우트히이터 5 : 금속유로품(Eu) 6 : 배기관
7 : 산소도입관 11 : 기판 12 : P-셀
13 : 피일드산화막 14 : 개구부 15 : 게이트 절연막
16 : Si층 17, 18 : 소오스, 드레인 19 : SiO2막
20 : Al 전극

Claims (3)

  1. 결정구조가 다이아몬드 구조 또는 입방정 ZnS 구조를 가진 반도체 단결정기체상에 에피택셜성장에 의하여 형성된 적어도 1층의 C-희토류결정구조를 가진 금속산화물 단결정박막을 가진 것을 특징으로 하는 에피택셜절연막을 가진 반도체 장치.
  2. 제 1 항에 있어서, 상기 C-희토류결정구조를 가진 금속산화물이 Ln2O3(여기서 은이트륨, 스칸듐 및 희토류금속원소 중에서 선택된 적어도 1개의 금속 원소)인 분자식으로 표시되는 금속산화물인 것을 특징으로 하는 에피택셜절연막을 가진 반도체 장치.
  3. 결정구조가 다이아몬드 구조 또는 입방정 ZnS 구조를 가진 반도체 단결정기체상에 Ln 금속(여기서 Ln은 이트륨, 스칸듐 및 희토류 금속원소)의 증기와 산소 가스 또는 산소를 함유하는 산화성 화합물 가스를 공급하고, 이 기체상에 C-희토류결정구조를 가진 Ln2O3인 분자식으로 표시되는 금속산화물박막을 에피택셜 성장시키는 것을 특징으로 하는 에피택셜절연막을 가진 반도체 장치의 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860004025A 1985-05-30 1986-05-23 반도체장치용 에피택셜절연막 및 그 제조방법 KR900001667B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60115305A JPH0682651B2 (ja) 1985-05-30 1985-05-30 半導体装置用エピタキシヤル絶縁膜とその製造方法
JP115305 1985-05-30
JP60-115305 1985-05-30

Publications (2)

Publication Number Publication Date
KR860009482A true KR860009482A (ko) 1986-12-23
KR900001667B1 KR900001667B1 (ko) 1990-03-17

Family

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KR1019860004025A KR900001667B1 (ko) 1985-05-30 1986-05-23 반도체장치용 에피택셜절연막 및 그 제조방법

Country Status (3)

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EP (1) EP0203578A3 (ko)
JP (1) JPH0682651B2 (ko)
KR (1) KR900001667B1 (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8809548D0 (en) * 1988-04-22 1988-05-25 Somekh R E Epitaxial barrier layers in thin film technology
US6469357B1 (en) 1994-03-23 2002-10-22 Agere Systems Guardian Corp. Article comprising an oxide layer on a GaAs or GaN-based semiconductor body
US5962883A (en) * 1994-03-23 1999-10-05 Lucent Technologies Inc. Article comprising an oxide layer on a GaAs-based semiconductor body
US6271069B1 (en) 1994-03-23 2001-08-07 Agere Systems Guardian Corp. Method of making an article comprising an oxide layer on a GaAs-based semiconductor body
JP3753920B2 (ja) * 2000-03-22 2006-03-08 Ｔｄｋ株式会社 磁性ガーネット単結晶膜及びその製造方法、及びそれを用いたファラデー回転子
KR100601332B1 (ko) 2004-06-10 2006-07-13 박병주 유기 반도체 소자, 그의 제조 방법 및 제조 장치
KR100646239B1 (ko) * 2005-04-20 2006-11-23 주식회사 디토정보기술 다수의 키를 효율적으로 관리할 수 있는 디지털 도어장치
JP5100313B2 (ja) * 2007-10-31 2012-12-19 株式会社東芝 酸化ランタン化合物の製造方法
JP6382629B2 (ja) * 2014-08-07 2018-08-29 大陽日酸株式会社 気相成長装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3174485D1 (en) * 1980-12-23 1986-05-28 Nat Res Dev Field effect transistors
JPS57211267A (en) * 1981-06-22 1982-12-25 Toshiba Corp Semiconductor device and manufacture thereof

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Publication number Publication date
JPH0682651B2 (ja) 1994-10-19
EP0203578A2 (en) 1986-12-03
KR900001667B1 (ko) 1990-03-17
JPS61274328A (ja) 1986-12-04
EP0203578A3 (en) 1989-12-06

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