KR860007729A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR860007729A
KR860007729A KR1019860000164A KR860000164A KR860007729A KR 860007729 A KR860007729 A KR 860007729A KR 1019860000164 A KR1019860000164 A KR 1019860000164A KR 860000164 A KR860000164 A KR 860000164A KR 860007729 A KR860007729 A KR 860007729A
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KR
South Korea
Prior art keywords
main surface
header
semiconductor chip
thickness
opening part
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KR1019860000164A
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English (en)
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KR930010069B1 (ko
Inventor
우수게 에노모도
우스게 에노모도
마사오 야마구지
도모오 사가모도
다가시 나가가와
노브가쯔 다나가
Original Assignee
가부시기가이샤 히다찌세이사꾸쇼
미쓰다 가쓰시게
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Publication of KR860007729A publication Critical patent/KR860007729A/ko
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Publication of KR930010069B1 publication Critical patent/KR930010069B1/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49562Geometry of the lead-frame for devices being provided for in H01L29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

내용 없음

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명을 적용한 절연형 파우어 트랜지스터의 사시도로 개구부와 홈의 상태를 도시한 도면.
제 2 도 A는 제 1 도의 ⅡA-ⅡA'선의 단면도로 헤더 지지체 12가 패케이지 높이의 대략 중앙에 존재하는 상태를 도시한 도면.
제 2 도는 B는 제 1 도 ⅡB-ⅡB'선의 단면도로 칩과 관통 구멍의 사이에 홈이 존재하는 상태를 도시한 도면.
제 3 도는 제 1 도의 절연형 파우어 트랜지스터에 이용되는 평판상의 리이드 프레임의 사시도.

Claims (7)

  1. 다음 사항을 포함하는 반도체 장치
    (1) 전기 도전성과 열전도성이 좋은 헤더 : 이 헤더는 제 1 주면과 그 제 1 주면에 대향하는 제 2 주면 및 제 1 주면과 제 2 주면의 사이에 다수 개의 측면을 가지며, 또한 상기 제 1 주면에는 반도체칩이 고정되어 있다.
    (2) 상기 헤더의 1측면에 한쪽 끝이 연결되고, 또한 종단부를 가진 헤더 지지체 : 이 헤더 지지체는, 제 1 주면과 이 제 1 주면에 대향한 제 2 주면을 갖는다.
    (3) 전기 도전성과 열도전성이 좋은 다수개의 리이드 : 이 리이드는 상기 반도체칩의 전극에 와이어를 거처서 전기적으로 접속되어 있다.
    (4) 봉지체는 상기 헤더 지지체의 제 1 주면의 일부가 바닥면으로 되는 제 1 개구부와, 상기 헤더 지지체의 제 2 주면의 일부가 바닥면으로 되는 제 2 개구부와, 상기 헤더의 긴쪽 방향과 수직인 방향으로 마련된 홈부를 갖는다.
    이 봉지체는, 상기 헤더, 상기 반도체칩, 상기 헤더지지체의 종단부를 덮으며, 또한 제 1 주면과, 이 제 1 주면에 대향하는 제 2 주면과, 제 1 주면에서 제 2 주면에 걸쳐서 마련된 관통 구멍을 갖는다.
    이 홈 부분은, 상기 관통 구멍과 상기 반도체칩의 사이에 마련되어 있다.
  2. 특허 청구의 범위 제 1 항에 있어서, 봉지체는 수지로 된다.
  3. 특허 청구의 범위 제 1 항에 있어서, 제 1 개구부와 제 2 개구부의 깊이는 근사(近似)하다.
  4. 특허 청구의 범위 제 2 항에 있어서, 홈 부분에 있어서의 헤더의 제 1 주면위의 수지의 두께는, 헤더의 제 2 주면 아래의 수지의 두께에 근사하고 있다.
  5. 특허청구의 범위 제 4 항에 있어서, 헤더의 두께는 리이드의 두께와 동일하다.
  6. 특허청구의 범위 제 2 항 내지 제 5 항의 반도체 장치는 또한 다음 사항을 구비한다.
    (5) 상기 홈 부분을 매입하는 절연층.
  7. 특허청구의 범위 제 6 항의 반도체 장치는 또 다음 사항을 구비한다.
    (6) 제 1 개구부 및 제 2 개구부를 매입하는 절연층.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860000164A 1985-03-13 1986-01-14 반도체 장치 KR930010069B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60-48309 1985-03-13
JP48309 1985-03-13
JP60048309A JPS61208242A (ja) 1985-03-13 1985-03-13 半導体装置

Publications (2)

Publication Number Publication Date
KR860007729A true KR860007729A (ko) 1986-10-15
KR930010069B1 KR930010069B1 (ko) 1993-10-14

Family

ID=12799814

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860000164A KR930010069B1 (ko) 1985-03-13 1986-01-14 반도체 장치

Country Status (2)

Country Link
JP (1) JPS61208242A (ko)
KR (1) KR930010069B1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0815165B2 (ja) * 1987-09-17 1996-02-14 株式会社東芝 樹脂絶縁型半導体装置の製造方法
US5089878A (en) * 1989-06-09 1992-02-18 Lee Jaesup N Low impedance packaging
EP0694966A1 (en) * 1994-07-29 1996-01-31 STMicroelectronics S.r.l. Package for an electronic semiconductor circuit

Also Published As

Publication number Publication date
JPS61208242A (ja) 1986-09-16
KR930010069B1 (ko) 1993-10-14

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